4H-SiC
Overview
| Works: | 2 works in 2 publications in 2 languages | |
|---|---|---|
Titles
碳化矽邊緣終結結構之摻雜濃度梯度效應之模擬 = = Simulation of doping concentration gradient effect on silicon carbide edge termination structure /
by:
(Language materials, printed)
1.2 kV 4H : = 碳化矽超接面雙重擴散金氧半場效電晶體設計最佳化之模擬 =Simulation of the design optimization of 1.2 kV 4H-SiC superjunction DMOSFET /
by:
(Language materials, printed)