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Resistive switching = oxide material...

Rupp, Jennifer.

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Resistive switching = oxide materials, mechanisms, devices and operations /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Resistive switching/ edited by Jennifer Rupp, Daniele Ielmini, Ilia Valov.
其他題名:	oxide materials, mechanisms, devices and operations /
其他作者:	Rupp, Jennifer.
出版者:	Cham :Springer International Publishing : : 2022.,
面頁冊數:	vi, 383 p. :ill., digital ;24 cm.
內容註:	Preface -- Memristive computing devices and applications -- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication -- Modeling resistive switching materials and devices across scales -- Review of mechanisms proposed for redox based resistive switching structures -- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices -- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups -- SiO2 based conductive bridging random access memory -- Reset switching statistics of TaOx-based Memristor -- Effect of O2- migration in Pt/HfO2/Ti/Pt structure -- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer -- Interface-type resistive switching in perovskite materials -- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition -- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature -- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions -- Resistive switching memory using biomaterials -- Optical memristive switches.
Contained By:	Springer Nature eBook
標題:	Electric resistors. -
電子資源:	https://doi.org/10.1007/978-3-030-42424-4
ISBN:	9783030424244

Resistive switching = oxide materials, mechanisms, devices and operations /
Resistive switchingoxide materials, mechanisms, devices and operations /[electronic resource] :edited by Jennifer Rupp, Daniele Ielmini, Ilia Valov. - Cham :Springer International Publishing :2022. - vi, 383 p. :ill., digital ;24 cm. - Electronic materials: science & technology. - Electronic materials: science & technology..

Preface -- Memristive computing devices and applications -- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication -- Modeling resistive switching materials and devices across scales -- Review of mechanisms proposed for redox based resistive switching structures -- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices -- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups -- SiO2 based conductive bridging random access memory -- Reset switching statistics of TaOx-based Memristor -- Effect of O2- migration in Pt/HfO2/Ti/Pt structure -- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer -- Interface-type resistive switching in perovskite materials -- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition -- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature -- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions -- Resistive switching memory using biomaterials -- Optical memristive switches.

This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries) ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.

ISBN: 9783030424244

Standard No.: 10.1007/978-3-030-42424-4doiSubjects--Topical Terms:

651805
Electric resistors.

LC Class. No.: TK7872.R4 / R47 2022

Dewey Class. No.: 621.384133

Resistive switching = oxide materials, mechanisms, devices and operations /
LDR:03994nmm a2200337 a 4500 001 2295612
003 DE-He213
005 20211015093530.0
006 m d
007 cr nn 008maaau
008 230324s2022 sz s 0 eng d
020 $a 9783030424244 $q (electronic bk.)
020 $a 9783030424237 $q (paper)
024 7 $a 10.1007/978-3-030-42424-4 $2 doi
035 $a 978-3-030-42424-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7872.R4 $b R47 2022
072 7 $a TJFD $2 bicssc
072 7 $a TEC021020 $2 bisacsh
072 7 $a TJFD $2 thema
082 0 4 $a 621.384133 $2 23
090 $a TK7872.R4 $b R433 2022
245 0 0 $a Resistive switching $h [electronic resource] : $b oxide materials, mechanisms, devices and operations / $c edited by Jennifer Rupp, Daniele Ielmini, Ilia Valov.
260 $a Cham : $b Springer International Publishing : $b Imprint: Springer, $c 2022.
300 $a vi, 383 p. : $b ill., digital ; $c 24 cm.
490 1 $a Electronic materials: science & technology
505 0 $a Preface -- Memristive computing devices and applications -- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication -- Modeling resistive switching materials and devices across scales -- Review of mechanisms proposed for redox based resistive switching structures -- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices -- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups -- SiO2 based conductive bridging random access memory -- Reset switching statistics of TaOx-based Memristor -- Effect of O2- migration in Pt/HfO2/Ti/Pt structure -- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer -- Interface-type resistive switching in perovskite materials -- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition -- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature -- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions -- Resistive switching memory using biomaterials -- Optical memristive switches.
520 $a This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers' understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries) ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept: -Explains diffusive processes at room temperature and materials/materials combination in resistive switching; -Illustrates the role of defects in zero, one, and two dimensions; -Features applications of ReRAMs in engineering such as novel computing architectures.
650 0 $a Electric resistors. $3 651805
650 0 $a Switching circuits. $3 632829
650 0 $a Electric resistors $x Materials. $3 3589628
650 1 4 $a Optical and Electronic Materials. $3 891120
650 2 4 $a Ceramics, Glass, Composites, Natural Materials. $3 3205789
650 2 4 $a Energy Materials. $3 3220517
650 2 4 $a Materials Engineering. $3 2071625
700 1 $a Rupp, Jennifer. $3 3589626
700 1 $a Ielmini, Daniele. $3 2206894
700 1 $a Valov, Ilia. $3 3589627
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
830 0 $a Electronic materials: science & technology. $3 873110
856 4 0 $u https://doi.org/10.1007/978-3-030-42424-4
950 $a Chemistry and Materials Science (SpringerNature-11644)