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[ subject:"Physics, Condensed Matter." ]
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Electronic structure calculation of ...
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Universiteit Antwerpen (Belgium).
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Electronic structure calculation of single and coupled self-assembled quantum dots.
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Electronic structure calculation of single and coupled self-assembled quantum dots./
作者:
Mlinar, Vladan.
面頁冊數:
190 p.
附註:
Adviser: Francois M. Peeters.
Contained By:
Dissertation Abstracts International68-08B.
標題:
Physics, Condensed Matter. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279291
ISBN:
9780549205760
Electronic structure calculation of single and coupled self-assembled quantum dots.
Mlinar, Vladan.
Electronic structure calculation of single and coupled self-assembled quantum dots.
- 190 p.
Adviser: Francois M. Peeters.
Thesis (Ph.D.)--Universiteit Antwerpen (Belgium), 2007.
There are two main contributions of this thesis.
ISBN: 9780549205760Subjects--Topical Terms:
1018743
Physics, Condensed Matter.
Electronic structure calculation of single and coupled self-assembled quantum dots.
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Electronic structure calculation of single and coupled self-assembled quantum dots.
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190 p.
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Source: Dissertation Abstracts International, Volume: 68-08, Section: B, page: 5307.
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Thesis (Ph.D.)--Universiteit Antwerpen (Belgium), 2007.
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First, from the theoretical point of view, we find that different treatments of the nanostructure-barrier interface in the framework of multiband effective-mass theory, result in the existence of non-physical solutions for the hole energy levels of a nanostructure. Our proposed improvement is an approach based on the envelope-function theory for nanostructures developed by Burt and Foreman. In structures with a large difference of the structural parameters between the constituent materials, such as InAs/GaAs quantum nanostructures, the conventional multiband models lead to non-physical solutions.
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Second, we investigate underlying physics of the theoretically less investigated QD systems. Variation of electronic and optical properties of InAs/GaAs QDs and QDM grown on [11k] substrates, where k=1,2,3 were analyzed and we found that: (i) The QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case. (ii) The small variation of inter-dot distance in eight QD molecule qualitatively changes the transition energy dependence on the substrate orientation. (iii) Size of the QD in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. Next, two cases of type II QDs where hole is localized outside the dot, were discussed: InP/InGaP QDs and QDMs in an external magnetic field, and InAs QDs capped with Ga(As,Sb). Competition between confinement, quantum mechanical coupling, and strain influence the exciton diamagnetic shift in single QD and double and triple QDM is investigated in details. Available experimental data were successfully described by one of the optically active exciton states of the lowest lying exciton quartet. Finally, the electronic and optical properties of unstrained GaAs self-assembled QDs with precisely known sizes and shape, placed in an external magnetic field are investigated. For magnetic fields applied both, in growth direction and perpendicular to it (B≤50T), we found good agreement between our predicted exciton diamagnetic shift and recent experimental magneto-photoluminescence data.
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School code: 1513.
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http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279291
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