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Ti-Sb-Te phase change materials = co...

Zhu, Min.

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Ti-Sb-Te phase change materials = component optimisation, mechanism and applications /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Ti-Sb-Te phase change materials/ by Min Zhu.
其他題名:	component optimisation, mechanism and applications /
作者:	Zhu, Min.
出版者:	Singapore :Springer Singapore : : 2017.,
面頁冊數:	xvi, 124 p. :ill., digital ;24 cm.
內容註:	Acknowledge -- Abstract -- Introduction -- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials -- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials -- Optimization Component Ti0.43Sb2Te3 -- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device -- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy -- Ti0.43Sb2Te3 Based Phase Change Memory Chip -- Summary -- References -- Published Papers and Patents -- Bibliography.
Contained By:	Springer eBooks
標題:	Phase change memory - Materials. -
電子資源:	http://dx.doi.org/10.1007/978-981-10-4382-6
ISBN:	9789811043826

Ti-Sb-Te phase change materials = component optimisation, mechanism and applications /
Zhu, Min.

Ti-Sb-Te phase change materialscomponent optimisation, mechanism and applications /[electronic resource] :by Min Zhu. - Singapore :Springer Singapore :2017. - xvi, 124 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

Acknowledge -- Abstract -- Introduction -- Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials -- Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials -- Optimization Component Ti0.43Sb2Te3 -- Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device -- Phase Change Mechanism of Ti0.43Sb2Te3 Alloy -- Ti0.43Sb2Te3 Based Phase Change Memory Chip -- Summary -- References -- Published Papers and Patents -- Bibliography.

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

ISBN: 9789811043826

Standard No.: 10.1007/978-981-10-4382-6doiSubjects--Topical Terms:

3242666
Phase change memory
--Materials.

LC Class. No.: TK7895.M4

Dewey Class. No.: 621.3976

Ti-Sb-Te phase change materials = component optimisation, mechanism and applications /
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520 $a This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
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