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Device physics, modeling, technology...

Amiri, Iraj Sadegh.

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Device physics, modeling, technology, and analysis for Silicon MESFET

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Device physics, modeling, technology, and analysis for Silicon MESFET/ by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry.
作者:	Amiri, Iraj Sadegh.
其他作者:	Mohammadi, Hossein.
出版者:	Cham :Springer International Publishing : : 2019.,
面頁冊數:	ix, 122 p. :ill., digital ;24 cm.
內容註:	Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs)
Contained By:	Springer eBooks
標題:	Metal semiconductor field-effect transistors - Mathematical models. -
電子資源:	https://doi.org/10.1007/978-3-030-04513-5
ISBN:	9783030045135

Device physics, modeling, technology, and analysis for Silicon MESFET
Amiri, Iraj Sadegh.

Device physics, modeling, technology, and analysis for Silicon MESFET[electronic resource] /by Iraj Sadegh Amiri, Hossein Mohammadi, Mahdiar Hosseinghadiry. - Cham :Springer International Publishing :2019. - ix, 122 p. :ill., digital ;24 cm.

Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs)

This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.

ISBN: 9783030045135

Standard No.: 10.1007/978-3-030-04513-5doiSubjects--Topical Terms:

3383117
Metal semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95 / .A457 2019

Dewey Class. No.: 621.3815284

Device physics, modeling, technology, and analysis for Silicon MESFET
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505 0 $a Chapter 1. Invention and Evaluation of Transistors and Integrated Circuits -- Chapter 2. General overview of the basic structure and operation of a typical silicon on insulator metal-semiconductor field effect transistor SOI-MESFET -- Chapter 3. Modeling of Classical SOI-MESFET -- Chapter 4. Design and modeling of triple-material gate SOI-MESFET -- Chapter 5. Three-dimensional analytical model of the non-classical three-gate SOI-MESFET -- Chapter 6. Analytical investigation of subthreshold performance of SOI-MESFET devices -- Chapter 7. Future works on Silicon-on-insulator metal semiconductor field effect transistors (SOI-MESFETs)
520 $a This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device. The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications. Describes the evolution of MESFET in the semiconductor industry; Discusses challenges and solutions associated with downscaling; Provides comprehensive information on the structure and operation of silicon MESFETs.
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