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Compound semiconductor materials and...

Liu, Zhaojun.

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Compound semiconductor materials and devices

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Compound semiconductor materials and devices/ Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
作者:	Liu, Zhaojun.
其他作者:	Huang, Tongde,
出版者:	San Rafael, California :Morgan & Claypool Publisher, : 2016.,
面頁冊數:	1 online resource (75 p.)
內容註:	Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.
標題:	Compound semiconductors. -
電子資源:	http://portal.igpublish.com/iglibrary/search/MCPB0000898.htmlclick for full text
ISBN:	9781627058520

Compound semiconductor materials and devices
Liu, Zhaojun.

Compound semiconductor materials and devices[electronic resource] /Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou. - San Rafael, California :Morgan & Claypool Publisher,2016. - 1 online resource (75 p.)

Includes bibliographical references and index.

Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.

Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.

ISBN: 9781627058520Subjects--Topical Terms:

553299
Compound semiconductors.

LC Class. No.: TK7871.99.C65

Dewey Class. No.: 621.38152

Compound semiconductor materials and devices
LDR:01370nmm a2200229 i 4500 001 2185919
006 m o d
007 cr cn|||||||||
008 200117s2016 cau ob 000 0 eng d
020 $a 9781627058520
020 $a 9781627058537
035 $a MCPB0000898
040 $a iG Publishing $b eng $e aacr2 $c iG Publishing
041 0 $a eng
050 0 0 $a TK7871.99.C65
082 0 4 $a 621.38152
100 1 $a Liu, Zhaojun. $3 3399541
245 1 0 $a Compound semiconductor materials and devices $h [electronic resource] / $c Zhaojun Liu, Tongde Huang, Qiang Li, Xing Lu, Xinbo Zou.
260 $a San Rafael, California : $b Morgan & Claypool Publisher, $c 2016.
300 $a 1 online resource (75 p.)
504 $a Includes bibliographical references and index.
505 0 $a Compound semiconductor materials and devices -- Abstract -- Contents -- Chapter 1. Introduction -- Chapter 2. GaN-based HEMTs and MOSHEMTs -- Chapter 3. III-V Materials and Devices -- Chapter 4. Summary -- References -- Authors' Biographies.
520 3 $a Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.
650 0 $a Compound semiconductors. $3 553299
650 0 $a Modulation-doped field-effect transistors. $3 3399546
700 1 $a Huang, Tongde, $e author. $3 3399542
700 1 $a Li, Qiang, $e author. $3 3399543
700 1 $a Lu, Xing, $e author. $3 3399544
700 1 $a Zou, Xinbo, $e author. $3 3399545
856 4 0 $u http://portal.igpublish.com/iglibrary/search/MCPB0000898.html $z click for full text