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Research on chemical mechanical poli...

Cheng, Jie.

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Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect/ by Jie Cheng.
作者:	Cheng, Jie.
出版者:	Singapore :Springer Singapore : : 2018.,
面頁冊數:	xviii, 137 p. :ill., digital ;24 cm.
Contained By:	Springer eBooks
標題:	Chemical mechanical planarization. -
電子資源:	http://dx.doi.org/10.1007/978-981-10-6165-3
ISBN:	9789811061653

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect
Cheng, Jie.

Research on chemical mechanical polishing mechanism of novel diffusion barrier Ru for Cu interconnect[electronic resource] /by Jie Cheng. - Singapore :Springer Singapore :2018. - xviii, 137 p. :ill., digital ;24 cm. - Springer theses,2190-5053. - Springer theses..

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

ISBN: 9789811061653

Standard No.: 10.1007/978-981-10-6165-3doiSubjects--Topical Terms:

3235220
Chemical mechanical planarization.

LC Class. No.: TK7874.84

Dewey Class. No.: 621.38152

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