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Sunlight, water, and III-V nitrides ...

Deutsch, Todd G.

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Sunlight, water, and III-V nitrides for fueling the future.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Sunlight, water, and III-V nitrides for fueling the future./
作者:	Deutsch, Todd G.
面頁冊數:	184 p.
附註:	Adviser: Carl Koval.
Contained By:	Dissertation Abstracts International67-05B.
標題:	Chemistry, Analytical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3219024
ISBN:	9780542684265

Sunlight, water, and III-V nitrides for fueling the future.
Deutsch, Todd G.

Sunlight, water, and III-V nitrides for fueling the future. - 184 p.

Adviser: Carl Koval.

Thesis (Ph.D.)--University of Colorado at Boulder, 2006.

Three configurations of single-crystal III-V nitride semiconductor samples were characterized to determine their potential for photoelectrolysis.

ISBN: 9780542684265Subjects--Topical Terms:

586156
Chemistry, Analytical.

Sunlight, water, and III-V nitrides for fueling the future.
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100 1 $a Deutsch, Todd G. $3 1288193
245 1 0 $a Sunlight, water, and III-V nitrides for fueling the future.
300 $a 184 p.
500 $a Adviser: Carl Koval.
500 $a Source: Dissertation Abstracts International, Volume: 67-05, Section: B, page: 2521.
502 $a Thesis (Ph.D.)--University of Colorado at Boulder, 2006.
520 $a Three configurations of single-crystal III-V nitride semiconductor samples were characterized to determine their potential for photoelectrolysis.
520 $a The material criteria necessary for photoelectrochemical (PEC) hydrogen production fall into three categories. First, the band gap of the semiconductor must be able to generate the potential difference necessary to electrolyze water. Second, the valence and conduction band edges at the interface have to encompass the hydrogen and oxygen redox potentials. For these p-type samples the flatband potential must be more positive of the potential for the oxygen couple. Finally, the semiconductor must be stable in the aqueous environment in which it operates.
520 $a The first semiconductor characterized was GaAs1-x-yP yNx deposited on a GaP substrate. This material met the band gap requirement but the flatband potentials were too negative. It was also prone to corrosion. The second material, GaP1-xNx grown on GaP, also had a sufficient band gap and insufficient valence band edge energy. This material was more stable than GaAs1-x-yPyN x. The last sample set, GaP1-xNx grown on Si, demonstrated unbiased water splitting. The efficiency was low due to the inability of the nitride layer to sustain large short circuit currents. Nitrogen enhanced stability in these materials but it did not eliminate corrosion.
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790 $a 0051
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