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Material and device studies for the ...

Li, Wei.

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Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy./
Author:	Li, Wei.
Description:	216 p.
Notes:	Adviser: Theodore D. Moustakas.
Contained By:	Dissertation Abstracts International68-08B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279940
ISBN:	9780549210757

Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy.
Li, Wei.

Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy. - 216 p.

Adviser: Theodore D. Moustakas.

Thesis (Ph.D.)--Boston University, 2008.

Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs).

ISBN: 9780549210757Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy.
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020 $a 9780549210757
035 $a (UMI)AAI3279940
035 $a AAI3279940
040 $a UMI $c UMI
100 1 $a Li, Wei. $3 884990
245 1 0 $a Material and device studies for the development of gallium nitride heterojunction bipolar transistors by molecular beam epitaxy.
300 $a 216 p.
500 $a Adviser: Theodore D. Moustakas.
500 $a Source: Dissertation Abstracts International, Volume: 68-08, Section: B, page: 5457.
502 $a Thesis (Ph.D.)--Boston University, 2008.
520 $a Due to its unique physical properties, gallium nitride (GaN) is under intense investigation for the development of transistors for high power, high frequency and high temperature applications. The majority of existing literature addresses field effect transistors. This dissertation addresses a wide spectrum of materials and device studies required for the development of GaN-based heterojunction bipolar transistors (HBTs).
520 $a The investigated structure has the emitter region based on n-Al xGa1-xN alloys, while the base and collector were based on p-InyGa1-yN and n-GaN, respectively. The growth and doping of the various layers of the transistor structure, on sapphire substrate, GaN-templates and free standing GaN substrates are addressed. Particular emphasis was placed on the p-type doping of the AlGaN and InGaN alloys with magnesium, both doping of bulk films as well as superlattices. The experimental results were compared with theoretical predictions of a self-consistent solution to the one-dimensional poisson and schrodinger equations. A hole concentration for p-InGaN of 9x1018CM-3 was obtained, which is the highest value published.
520 $a The device aspect of this research addressed issues related to the development of novel methods of selective growth by molecular beam epitaxy (MBE) of the emitter onto the base. This was found to be necessary to avoid damage of the base during mesa etching. The final product of this research was the fabrication and DC characterization of HBT devices. This included various lithography, metallization, etching and annealing steps. The devices were evaluated under common base and common emitter configurations and the best result obtained was a room temperature gain of 59.
590 $a School code: 0017.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0544
690 $a 0794
710 2 $a Boston University. $3 1017454
773 0 $t Dissertation Abstracts International $g 68-08B.
790 $a 0017
790 1 0 $a Moustakas, Theodore D., $e advisor
791 $a Ph.D.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279940