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Raman-based silicon photonic devices.

Raghunathan, Varun.

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Raman-based silicon photonic devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Raman-based silicon photonic devices./
作者:	Raghunathan, Varun.
面頁冊數:	197 p.
附註:	Adviser: Bahram Jalali.
Contained By:	Dissertation Abstracts International69-02B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3302600
ISBN:	9780549485575

Raman-based silicon photonic devices.
Raghunathan, Varun.

Raman-based silicon photonic devices. - 197 p.

Adviser: Bahram Jalali.

Thesis (Ph.D.)--University of California, Los Angeles, 2008.

Silicon photonics has emerged as an exciting area of research in the last few years with the objective of realizing efficient optoelectronic devices, which can be integrated with electronics. This thesis summarizes one such research effort by making use of nonlinear Raman scattering effects in silicon. The devices studied here are broadly classified into two different wavelength regions, viz. near-infrared and mid-infared Raman devices with their respective applications. The near-infrared Raman devices studied include amplifiers, lasers and wavelength converters, mainly focused towards telecom and datacom applications. Pulsed Raman amplification experiments resulted in Raman gain as high as 20dB at 1675nm in silicon waveguides. This high gain helped overcome waveguide loss and lasing was demonstrated in these devices. Raman amplification of 17dB and lasing were also observed in Silicon-Germanium (SiGe) waveguides. The motivation for using SiGe as the Raman medium is to make the gain spectrum broadband and more flexible. Coherent anti-Stokes Raman scattering (CARS) is used to demonstrate wavelength band conversion across 1300 and 1500nm wavelength regions. Preliminary experiments resulted in conversion efficiency of &sim;10 -5, limited by the lack of phase matching between the interacting waves. A novel scheme to achieve stress-induced birefringence tuning resulted in phase matching of waveguides and an improvement in conversion efficiency by &sim;12dB. The near-infrared silicon Raman devices studied here are dogged by nonlinear optical losses due to two-photon and free-carrier absorption. It has been experimentally ascertained that moving to the mid-infrared wavelengths with photon energy less than half the bandgap of silicon, is beneficial in eliminating these absorption effects. Silicon is also found to be an attractive mid-infrared material due to its superior thermal, damage, transmission and Raman properties. Experimental results of Raman amplification in the mid-infrared (at 3.39micron) with gains of &sim;12-13dB in bulk silicon and slab waveguides are discussed. A novel application of mid-infrared Raman scattering in a self-imaging multimode waveguide amplifier is also proposed and analyzed Numerical simulation predicts that these self-imaging amplifiers achieve &sim;10dB of gain over 5cm of waveguide length with minimal image distortions. Applications of this amplifier as image preamplifier for Laser-Radar (LADAR) and high gain beam clean-up amplifier are also analyzed.

ISBN: 9780549485575Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Raman-based silicon photonic devices.
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