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Piezoresistive pressure sensor with ...

Li, Gang.

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Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon./
作者:	Li, Gang.
面頁冊數:	125 p.
附註:	Adviser: Man Wong.
Contained By:	Dissertation Abstracts International66-01B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3159627
ISBN:	9780496928828

Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.
Li, Gang.

Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon. - 125 p.

Adviser: Man Wong.

Thesis (Ph.D.)--Hong Kong University of Science and Technology (Hong Kong), 2005.

Micromachined sensors and actuators have been investigated and industrially produced for more than twenty years. The most widely used sensing principle, especially for pressure sensors, is piezoresistive effect of the silicon, due to its simple fabrication process, measurement circuit and so on. To date, devices based on piezoresistive strain sensors are mostly realized on single-crystal (c-Si) substrates. However, a major problem of this approach is that significant drift is produced by the leakage current of the pn junctions used to isolate the piezoresistors. Therefore, the low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) was used to solve this problem using insulator, such as oxide, but not pn junctions to isolate the piezoresistors. However, because of the inferior electrical properties of the material, integration of mechanical sensing and electronic signal-processing devices on such poly-Si has not been seriously considered.

ISBN: 9780496928828Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.
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020 $a 9780496928828
035 $a (UMI)AAI3159627
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040 $a UMI $c UMI
100 1 $a Li, Gang. $3 1278067
245 1 0 $a Piezoresistive pressure sensor with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon.
300 $a 125 p.
500 $a Adviser: Man Wong.
500 $a Source: Dissertation Abstracts International, Volume: 66-01, Section: B, page: 0450.
502 $a Thesis (Ph.D.)--Hong Kong University of Science and Technology (Hong Kong), 2005.
520 $a Micromachined sensors and actuators have been investigated and industrially produced for more than twenty years. The most widely used sensing principle, especially for pressure sensors, is piezoresistive effect of the silicon, due to its simple fabrication process, measurement circuit and so on. To date, devices based on piezoresistive strain sensors are mostly realized on single-crystal (c-Si) substrates. However, a major problem of this approach is that significant drift is produced by the leakage current of the pn junctions used to isolate the piezoresistors. Therefore, the low-pressure chemical vapor deposited polycrystalline silicon (poly-Si) was used to solve this problem using insulator, such as oxide, but not pn junctions to isolate the piezoresistors. However, because of the inferior electrical properties of the material, integration of mechanical sensing and electronic signal-processing devices on such poly-Si has not been seriously considered.
520 $a In our work, the metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) is developed to form poly-Si with significantly improved material properties. Further enhancement is obtained by subjecting MILC poly-Si to a high-temperature re-crystallization (RC) step. RC-MILC poly-Si piezoresistors with improved gauge factor, reduced noise, lower temperature coefficient of resistance and transistors with performance approaching those built on c-Si have been obtained. The nickel concentration effect in transistors was also investigated.
520 $a An RC-MILC poly-Si piezoresistive pressure sensor with integrated amplifier has been designed, fabricated, and tested. The integrated one-stage amplifier has DC gain of about 30dB. Airborne sound sensitivity of 50muV/Pa and a flat frequency response within +/-3dB between 100 Hz and 8 kHz has been measured. Many methods are proposed to further increase the sensitivity by reducing the residual stress of the sensing diaphragm.
520 $a At last, another device, silicon capacitive microphone, is developed. The equivalent circuit of the microphone was developed, including acoustic, mechanical and electrical parts. A very simple fabrication is developed. The device shows sensitivities of 300muV/Pa with bias voltage 8V.
590 $a School code: 1223.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a Hong Kong University of Science and Technology (Hong Kong). $3 1022235
773 0 $t Dissertation Abstracts International $g 66-01B.
790 $a 1223
790 1 0 $a Wong, Man, $e advisor
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3159627