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Hybrid semiconductor nanomagnetoelec...

Bae, Jong Uk.

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Hybrid semiconductor nanomagnetoelectronic devices.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Hybrid semiconductor nanomagnetoelectronic devices./
Author:	Bae, Jong Uk.
Description:	163 p.
Notes:	Adviser: Jonathan P. Bird.
Contained By:	Dissertation Abstracts International68-05B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3261981

Hybrid semiconductor nanomagnetoelectronic devices.
Bae, Jong Uk.

Hybrid semiconductor nanomagnetoelectronic devices. - 163 p.

Adviser: Jonathan P. Bird.

Thesis (Ph.D.)--State University of New York at Buffalo, 2007.

The subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Hybrid semiconductor nanomagnetoelectronic devices.
LDR:02307nam 2200277 a 45 001 948251
005 20110524
008 110524s2007 ||||||||||||||||| ||eng d
035 $a (UMI)AAI3261981
035 $a AAI3261981
040 $a UMI $c UMI
100 1 $a Bae, Jong Uk. $3 1271712
245 1 0 $a Hybrid semiconductor nanomagnetoelectronic devices.
300 $a 163 p.
500 $a Adviser: Jonathan P. Bird.
500 $a Source: Dissertation Abstracts International, Volume: 68-05, Section: B, page: 3255.
502 $a Thesis (Ph.D.)--State University of New York at Buffalo, 2007.
520 $a The subject of this dissertation is the exploration of a new class of hybrid semiconductor nanomagnetoelectronic devices. In these studies, single-domain nanomagnets are used as the gate in a transistor structure, and the spatially non-uniform magnetic fields that they generate provide an additional means to modulate the channel conductance. A quantum wire etched in a high-mobility GaAs/AlGaAs quantum well serves as the channel of this device and the current flow through it is modulated by a high-aspect-ratio Co nanomagnet. The conductance of this device exhibits clear hysteresis in a magnetic field, which is significantly enhanced when the nanomagnet is used as a gate to form a local tunnel barrier in the semiconductor channel. A simple theoretical model, which models the tunnel barrier as a simple harmonic saddle, is able to account for the experimentallyobserved behavior. Further improvements in the tunneling magneto-resistance of this device should be possible in the future by optimizing the gate and channel geometries. In addition to these investigations, we have also explored the hysteretic magnetoresistance of devices in which the tunnel barrier is absent and the behavior is instead dominated by the properties of the magnetic barrier alone. We show experimentally how quantum corrections to the conductance of the quantum wire compete against the magneto-transport effects induced by the non-uniform magnetic field.
590 $a School code: 0656.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
690 $a 0611
710 2 0 $a State University of New York at Buffalo. $b Electrical Engineering. $3 1019366
773 0 $t Dissertation Abstracts International $g 68-05B.
790 $a 0656
790 1 0 $a Bird, Jonathan P., $e advisor
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3261981