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Zinc oxide sputter deposition and mo...

Liu, Wei.

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Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells./
Author:	Liu, Wei.
Description:	138 p.
Notes:	Adviser: Oscar D. Crisalle.
Contained By:	Dissertation Abstracts International69-02B.
Subject:	Engineering, Chemical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3300763
ISBN:	9780549456636

Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells.
Liu, Wei.

Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells. - 138 p.

Adviser: Oscar D. Crisalle.

Thesis (Ph.D.)--University of Florida, 2007.

Highly transparent and conductive aluminum doped zinc oxide (AZO) thin films were successfully obtained through RF magnetron sputtering using argon as the sputtering gas. Thin film AZO grown under different conditions such as base pressure, deposition power and working pressure was characterized. A correlation between various operational parameters and the optical and electrical properties of AZO was developed and used to suggest optimum of operational conditions.

ISBN: 9780549456636Subjects--Topical Terms:

1018531
Engineering, Chemical.

Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells.
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020 $a 9780549456636
035 $a (UMI)AAI3300763
035 $a AAI3300763
040 $a UMI $c UMI
100 1 $a Liu, Wei. $3 1260300
245 1 0 $a Zinc oxide sputter deposition and modeling of copper-indium-gallium-diselenide-based thin film solar cells.
300 $a 138 p.
500 $a Adviser: Oscar D. Crisalle.
500 $a Source: Dissertation Abstracts International, Volume: 69-02, Section: B, page: 1160.
502 $a Thesis (Ph.D.)--University of Florida, 2007.
520 $a Highly transparent and conductive aluminum doped zinc oxide (AZO) thin films were successfully obtained through RF magnetron sputtering using argon as the sputtering gas. Thin film AZO grown under different conditions such as base pressure, deposition power and working pressure was characterized. A correlation between various operational parameters and the optical and electrical properties of AZO was developed and used to suggest optimum of operational conditions.
520 $a The sputtering process was improved by adding a small amount of hydrogen into the sputtering gas. A significant improvement of the conductivity of AZO thin films was observed. This observation together with results obtained under different base pressures supports the literature prediction that hydrogen plays a favorable role in n-type zinc oxide thin films. Hydrogen participates in the doping process and causes increased carrier concentration.
520 $a The AZO thin films sputtered with the Ar and H2 mixture gas were incorporated in copper-indium-gallium diselenide (CIGS) solar cells and devices with a thin film layer structure of the form ZnO/CdS/CIGS/Mo were fabricated. It is found that the sheet resistance and thickness of the AZO layer can be an important factor determining the performance of CIGS solar cells. The devices were measured under AM 1.5 radiation and a conversion efficiency of approximately 9% was achieved.
520 $a To better understand solar cell devices fabricated using chalcopyrite semiconductors such as CuInSe2 and CuGaSe2, an inverse modeling process was developed. The inverse modeling process was realized by integrating two software tools, namely Matlab and Medici, under a Linux environment. Matlab provides the values of candidate input parameters to Medici, which in turn outputs device simulation results that are fed back to Matlab. This process continues until the outputs reach the target values. The inverse modeling process successfully identified the defect distribution in a CIGS layer that matched a known cell performance. In an ensuing optimization step, optimal defect concentrations were found, revealing that the shallow acceptor defect concentrations are favorable for increasing the efficiency.
590 $a School code: 0070.
650 4 $a Engineering, Chemical. $3 1018531
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0542
690 $a 0544
710 2 $a University of Florida. $3 718949
773 0 $t Dissertation Abstracts International $g 69-02B.
790 $a 0070
790 1 0 $a Crisalle, Oscar D., $e advisor
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3300763