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Plasma synthesis of silicon nanocrys...

Bapat, Ameya.

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Plasma synthesis of silicon nanocrystals: Development and diagnostics.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Plasma synthesis of silicon nanocrystals: Development and diagnostics./
Author:	Bapat, Ameya.
Description:	123 p.
Notes:	Source: Dissertation Abstracts International, Volume: 68-06, Section: B, page: 4083.
Contained By:	Dissertation Abstracts International68-06B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3268970
ISBN:	9780549089254

Plasma synthesis of silicon nanocrystals: Development and diagnostics.
Bapat, Ameya.

Plasma synthesis of silicon nanocrystals: Development and diagnostics. - 123 p.

Source: Dissertation Abstracts International, Volume: 68-06, Section: B, page: 4083.

Thesis (Ph.D.)--University of Minnesota, 2007.

Single-crystal semiconductor nanoparticles are suitable for single nanoparticle electronic devices. Low-pressure silane-argon plasmas are interesting due to their ability to synthesize silicon nanoparticles. The plasma described here is a capacitively-coupled, rotating filamentary plasma instability, composed of a number of plasma globules each &sim;3mm in diameter. The 13.56 MHz, 200W RF plasma is operated at &sim;2Torr in 5% silane diluted in helium and argon. This discharge can reproducibly synthesize monodisperse, single-crystal, cube-shaped silicon nanoparticles &sim;35nm in size. These particles are used to fabricate a single nanoparticle transistor device.

ISBN: 9780549089254Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Plasma synthesis of silicon nanocrystals: Development and diagnostics.
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020 $a 9780549089254
035 $a (UMI)AAI3268970
035 $a AAI3268970
040 $a UMI $c UMI
100 1 $a Bapat, Ameya. $3 1269472
245 1 0 $a Plasma synthesis of silicon nanocrystals: Development and diagnostics.
300 $a 123 p.
500 $a Source: Dissertation Abstracts International, Volume: 68-06, Section: B, page: 4083.
502 $a Thesis (Ph.D.)--University of Minnesota, 2007.
520 $a Single-crystal semiconductor nanoparticles are suitable for single nanoparticle electronic devices. Low-pressure silane-argon plasmas are interesting due to their ability to synthesize silicon nanoparticles. The plasma described here is a capacitively-coupled, rotating filamentary plasma instability, composed of a number of plasma globules each &sim;3mm in diameter. The 13.56 MHz, 200W RF plasma is operated at &sim;2Torr in 5% silane diluted in helium and argon. This discharge can reproducibly synthesize monodisperse, single-crystal, cube-shaped silicon nanoparticles &sim;35nm in size. These particles are used to fabricate a single nanoparticle transistor device.
520 $a Process diagnostics are reported which help understand particle nucleation and growth in this unique plasma. Particle extraction studies are done along the length of the reactor. It is shown that particles nucleate and quickly form &sim;300nm, amorphous, cauliflower-shape particles 50mm upstream of the RF electrode. These undergo crystallization in the plasma to form &sim;90nm single crystalline spheres which undergo further reduction in size to 35nm cubes collected downstream.
520 $a The plasma instability is characterized by plasma density and electron temperature measurements. Measurements are reported inside and outside the globules of the filamentary plasma. Density measurements are done using an electrostatic capacitance probe. Electron temperature measurements are done using optical emission spectroscopy. Experimentally measured emission line intensities are compared to those calculated using a model that accounts for ground-state excitation as well as excitation from metastable states. Using measured density and temperature it is found that particles get close to the melting point but do not melt. Low-temperature hydrogen-mediated crystallization as observed in a:Si-H thin films is proposed as a likely mechanism for particle crystallization.
520 $a Polarization-sensitive light scattering diagnostics are reported. Scattering measurements corroborate particle development process as predicted from extraction measurements. Particles upstream of the RF electrode exhibit cross-polarization which reduces as they near the RF electrode, hinting at surface smoothening. Downstream of the RF electrode particles change from Mie to Rayleigh regime as seen by the absence of horizontal polarization intensity. Hydrogen etch is proposed as a possible mechanism responsible for reduction of particle size. Hydrogen etch and silicon surface diffusion are both proposed as likely mechanisms for the formation of cubic particles.
590 $a School code: 0130.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Mechanical. $3 783786
650 4 $a Physics, Fluid and Plasma. $3 1018402
690 $a 0544
690 $a 0548
690 $a 0759
710 2 $a University of Minnesota. $3 676231
773 0 $t Dissertation Abstracts International $g 68-06B.
790 $a 0130
791 $a Ph.D.
792 $a 2007
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3268970