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A model of energy and angular distri...

Hoekstra, Robert John.

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A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems./
Author:	Hoekstra, Robert John.
Description:	127 p.
Notes:	Adviser: Mark J. Kushner.
Contained By:	Dissertation Abstracts International59-11B.
Subject:	Computer Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9912267
ISBN:	9780599105843

A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems.
Hoekstra, Robert John.

A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems. - 127 p.

Adviser: Mark J. Kushner.

Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.

Plasma etching using high-density plasma (HDP) reactors is becoming predominant in the semiconductor fabrication industry due to its capability to produce highly anisotropic features at current and future linewidths (0.5 to 0.17 mum). The Computational Optical and Discharge Physics Group (CODPG) has developed a modularized computational simulation, the Hybrid Plasma Equipment Model (HPEM), to examine these systems. The two offline modules developed, the Plasma Chemistry Monte Carlo Model (PCMCM) and the Monte Carlo Feature Profile Model (MC-FPM), focus on the effect of the plasma on the wafer surface. Using the output from the main plasma simulation, the PCMCM self-consistently determines the energy and angular distributions of all plasma species at the wafer. This distribution information can then be used by the MC-FPM to determine the time evolution of etch features on the wafer based on an energy- and angular- dependent surface chemistry. This chemistry has been developed using experimental results by other researchers as described in this paper.

ISBN: 9780599105843Subjects--Topical Terms:

626642
Computer Science.

A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems.
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020 $a 9780599105843
035 $a (UMI)AAI9912267
035 $a AAI9912267
040 $a UMI $c UMI
100 1 $a Hoekstra, Robert John. $3 1269128
245 1 2 $a A model of energy and angular distributions of fluxes to the substrate and resulting surface topology for plasma etching systems.
300 $a 127 p.
500 $a Adviser: Mark J. Kushner.
500 $a Source: Dissertation Abstracts International, Volume: 59-11, Section: B, page: 5991.
502 $a Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998.
520 $a Plasma etching using high-density plasma (HDP) reactors is becoming predominant in the semiconductor fabrication industry due to its capability to produce highly anisotropic features at current and future linewidths (0.5 to 0.17 mum). The Computational Optical and Discharge Physics Group (CODPG) has developed a modularized computational simulation, the Hybrid Plasma Equipment Model (HPEM), to examine these systems. The two offline modules developed, the Plasma Chemistry Monte Carlo Model (PCMCM) and the Monte Carlo Feature Profile Model (MC-FPM), focus on the effect of the plasma on the wafer surface. Using the output from the main plasma simulation, the PCMCM self-consistently determines the energy and angular distributions of all plasma species at the wafer. This distribution information can then be used by the MC-FPM to determine the time evolution of etch features on the wafer based on an energy- and angular- dependent surface chemistry. This chemistry has been developed using experimental results by other researchers as described in this paper.
520 $a An important process in semiconductor manufacturing is the etching of silicon and polysilicon for device fabrication. Chlorine-based chemistries are commonly used in industry today due to the capability of highly anisotropic feature etching allowing the necessary submicron feature production. In current HDP reactors, "microtrench" formation, sidewall slope, and charging effects play an important role in device performance. The MC-FPM has been used to examine the mechanisms, such as specular reflection and energy and angular dependence of etch yield, involved in the shaping of the etch feature. Parameterization of these mechanisms and comparison to experiment have allowed "cradle-to-grave" (reactor parameters to feature shape) predictive capability with the HPEM, PCMCM, and MC-FPM coupled models for HDP etching processes.
590 $a School code: 0090.
650 4 $a Computer Science. $3 626642
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Fluid and Plasma. $3 1018402
690 $a 0544
690 $a 0759
690 $a 0984
710 2 $a University of Illinois at Urbana-Champaign. $3 626646
773 0 $t Dissertation Abstracts International $g 59-11B.
790 $a 0090
790 1 0 $a Kushner, Mark J., $e advisor
791 $a Ph.D.
792 $a 1998
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9912267