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A new generation of high temperature...
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Spirig, John V.
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A new generation of high temperature oxygen sensors.
紀錄類型:
書目-語言資料,印刷品 : Monograph/item
正題名/作者:
A new generation of high temperature oxygen sensors./
作者:
Spirig, John V.
面頁冊數:
195 p.
附註:
Adviser: Prabir K. Dutta.
Contained By:
Dissertation Abstracts International68-08B.
標題:
Chemistry, Analytical. -
電子資源:
http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3279769
ISBN:
9780549205937
A new generation of high temperature oxygen sensors.
Spirig, John V.
A new generation of high temperature oxygen sensors.
- 195 p.
Adviser: Prabir K. Dutta.
Thesis (Ph.D.)--The Ohio State University, 2007.
Potentiometric internal reference oxygen sensors were created by embedding a metal/metal oxide mixture within an yttria-stabilized zirconia oxygen-conducting ceramic superstructure. A static internal reference oxygen pressure was produced inside the reference chamber of the sensor at the target application temperature. The metal/metal oxide-containing reference chamber was sealed within the stabilized zirconia ceramic superstructure by a high pressure (3-6 MPa) and high temperature (1200-1300°C) bonding method that initiated grain boundary sliding between the ceramic components. The bonding method created ceramic joints that were pore-free and indistinguishable from the bulk ceramic. The oxygen sensor presented in this study is capable of long-term operation and is resistant to the strains of thermal cycling. The temperature ceiling of this device was limited to 800°C by the glass used to seal the sensor package where the lead wire breached the inner-to-outer environment. Were it possible to create a gas-tight joint between an electron carrier and stabilized zirconia, additional sealing agents would not be necessary during sensor construction. In order to enable this enhancement it is necessary to make a gas-tight joint between two dissimilar materials: a ceramic electrolyte and an efficient ceramic electron carrier.
ISBN: 9780549205937Subjects--Topical Terms:
586156
Chemistry, Analytical.
A new generation of high temperature oxygen sensors.
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Potentiometric internal reference oxygen sensors were created by embedding a metal/metal oxide mixture within an yttria-stabilized zirconia oxygen-conducting ceramic superstructure. A static internal reference oxygen pressure was produced inside the reference chamber of the sensor at the target application temperature. The metal/metal oxide-containing reference chamber was sealed within the stabilized zirconia ceramic superstructure by a high pressure (3-6 MPa) and high temperature (1200-1300°C) bonding method that initiated grain boundary sliding between the ceramic components. The bonding method created ceramic joints that were pore-free and indistinguishable from the bulk ceramic. The oxygen sensor presented in this study is capable of long-term operation and is resistant to the strains of thermal cycling. The temperature ceiling of this device was limited to 800°C by the glass used to seal the sensor package where the lead wire breached the inner-to-outer environment. Were it possible to create a gas-tight joint between an electron carrier and stabilized zirconia, additional sealing agents would not be necessary during sensor construction. In order to enable this enhancement it is necessary to make a gas-tight joint between two dissimilar materials: a ceramic electrolyte and an efficient ceramic electron carrier.
520
$a
Aluminum-doped lanthanum strontium manganese oxide, La0.77Sr 0.20Al0.9Mn0.1O3, was joined to stabilized tetragonal zirconia polymorph YTZP (ZrO2)0.97(Y 2O3)0.03 by a uniaxial stress (3-6 MPa) and high-temperature (1250-1350°C) bonding method that initiated grain-boundary sliding between the ceramic components. An analysis of reactivity between different Al-dopings of LaxSr1-xAlyMn1-yO3 indicated that the Al:Mn ratio must be high to diminish the reaction between LaxSr1-xAlyMn1-yO3 and stabilized zirconia. While the resulting compound, La0.77Sr 0.20Al0.9Mn0.1O3, was an inefficient electron carrier, the successful bond between an aluminum-doped manganate perovskite and stabilized zirconia, served as a model system for joining electron carriers to an electrolyte without the creation of undesirable interlayers. Electron microscopy confirmed that intergranular penetration occurred at the joining plane leading to effective bonding between the two dissimilar ceramics. Raman spectral maps of the joining planes obtained with 2-D Raman microscopy demonstrated the absence of any new phases at the interface.
520
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A conducting perovskite with a lower Al:Mn ratio, but compensating A-site deficiency, La0.69Sr0.18Al0.45Mn0.55 O3, was joined to YTZP at 1250°C. X-ray diffraction was used to gain structural information on this A-site deficient perovskite. Room temperature resistivity measurements of the electroceramics were performed on joined and unjoined samples to determine the extent to which joining altered electron conduction within the LSAM. Electron microscopy confirmed that intergranular penetration occurred at the joining plane leading to effective bonding between the two dissimilar ceramics. Raman spectral maps of the joined samples demonstrated that joining temperature determines the extent to which interlayers begin to form in the joining plane. X-ray microdiffraction of the joining planes confirmed a threshold temperature for operation of a device created from these materials at 1350°C.
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A new material with diminished reactivity and high conductivity is presented to serve as a replacement for metal electrodes. In this manner, the model for a new generation of high-temperature oxygen sensors with internal references and ceramic wires is elucidated.
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