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Germanosilicide contacts to ultra-sh...

Liu, Jing.

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Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys./
Author:	Liu, Jing.
Description:	154 p.
Notes:	Chair: Mehmet C. Ozturk.
Contained By:	Dissertation Abstracts International64-02B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3081726

Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys.
Liu, Jing.

Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys. - 154 p.

Chair: Mehmet C. Ozturk.

Thesis (Ph.D.)--North Carolina State University, 2003.

Future CMOS requires new junction and contact formation technologies to produce source/drain junctions with super-abrupt doping profiles, above equilibrium dopant activation and contact resistivity values near 10<super> −8</super> ohm-cm<super>2</super>. Recently, this laboratory demonstrated a new junction formation technology based on selective deposition of heavily doped Si1−xGex alloys in source/drain regions isotropically etched to the desired depth, which has the potential to meet all junction and contact requirements of future CMOS technology nodes. Of particular interest to this thesis is the smaller bandgap of Si1−x Gex resulting in a smaller metal-semiconductor barrier height, which is a key advantage in reducing the contact resistivity of a metal-semiconductor contact. In this work, formation of germanosilicide contacts to heavily boron doped Si1−xGex alloys was studied with the intention to find a contact solution for future CMOS technology nodes beyond 100 nm.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys.
LDR:03608nam 2200277 a 45 001 936228
005 20110510
008 110510s2003 eng d
035 $a (UnM)AAI3081726
035 $a AAI3081726
040 $a UnM $c UnM
100 1 $a Liu, Jing. $3 1027965
245 1 0 $a Germanosilicide contacts to ultra-shallow p(+)n junctions of nanoscale CMOS integrated circuits by selective deposition of in-situ doped silicon-germanium alloys.
300 $a 154 p.
500 $a Chair: Mehmet C. Ozturk.
500 $a Source: Dissertation Abstracts International, Volume: 64-02, Section: B, page: 0876.
502 $a Thesis (Ph.D.)--North Carolina State University, 2003.
520 $a Future CMOS requires new junction and contact formation technologies to produce source/drain junctions with super-abrupt doping profiles, above equilibrium dopant activation and contact resistivity values near 10<super> −8</super> ohm-cm<super>2</super>. Recently, this laboratory demonstrated a new junction formation technology based on selective deposition of heavily doped Si1−xGex alloys in source/drain regions isotropically etched to the desired depth, which has the potential to meet all junction and contact requirements of future CMOS technology nodes. Of particular interest to this thesis is the smaller bandgap of Si1−x Gex resulting in a smaller metal-semiconductor barrier height, which is a key advantage in reducing the contact resistivity of a metal-semiconductor contact. In this work, formation of germanosilicide contacts to heavily boron doped Si1−xGex alloys was studied with the intention to find a contact solution for future CMOS technology nodes beyond 100 nm.
520 $a Germanosilicides of Ti, Co, Ni, Pt, W, Ta, Mo and Zr were studied and NiSi1−xGex was found to be the most promising candidates as source/drain contacts. Low resistivity NiSi1−xGe x is formed at temperatures as low as 300°C and it is capable of yielding a contact resistivity of &sim;10<super>−8</super> ohm-cm<super> 2</super> on both p<super>+</super> and n<super>+</super> Si1−x Gex. NiSi1−xGex was found to suffer from Ge out-diffusion, which had a direct negative impact on its thermal stability. NiSi1−xGex formed at temperatures above 450°C exhibited high sheet resistance and a rough germanosilicide/Si 1−xGex interface. Below this temperature, ultra-shallow p<super>+</super>-n junctions with self-aligned NiSi1−xGe x contacts were formed with excellent reverse bias junction leakage characteristics.
520 $a A new approach was proposed to form ultra-thin NiSi1−xGe x layers with enhanced thermal stability. By inserting a thin Pt interlayer between Ni and Si1−xGex, the thermal stability of NiSi1−xGex was found to be significantly improved. On boron doped Si1−xGex, the material was found to be stable up to 700°C with a total starting metal thickness of 10nm. Pt incorporation was also found to result in better surface and interface roughness.
590 $a School code: 0155.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a North Carolina State University. $3 1018772
773 0 $t Dissertation Abstracts International $g 64-02B.
790 $a 0155
790 1 0 $a Ozturk, Mehmet C., $e advisor
791 $a Ph.D.
792 $a 2003
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3081726