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Mechanical modeling of microelectron...

Guo, Quanxin.

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Mechanical modeling of microelectronic packaging components for accelerated tests.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Mechanical modeling of microelectronic packaging components for accelerated tests./
Author:	Guo, Quanxin.
Description:	137 p.
Notes:	Advisers: Leon M. Keer; Morris E. Fine.
Contained By:	Dissertation Abstracts International52-05B.
Subject:	Applied Mechanics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9128990

Mechanical modeling of microelectronic packaging components for accelerated tests.
Guo, Quanxin.

Mechanical modeling of microelectronic packaging components for accelerated tests. - 137 p.

Advisers: Leon M. Keer; Morris E. Fine.

Thesis (Ph.D.)--Northwestern University, 1991.

Determining mechanical reliability of microelectronic components of aluminum thin-film interconnects and solder from accelerated tests has been studied theoretically. A failure model based on diffusion theory and fracture mechanics has been obtained for open-circuit failure of thin-film interconnects. A methodology has been given to predict the solder lifetime of thermomechanical fatigue from isothermal fatigue tests.Subjects--Topical Terms:

1018410
Applied Mechanics.

Mechanical modeling of microelectronic packaging components for accelerated tests.
LDR:02773nam 2200313 a 45 001 928327
005 20110426
008 110426s1991 eng d
035 $a (UnM)AAI9128990
035 $a AAI9128990
040 $a UnM $c UnM
100 1 $a Guo, Quanxin. $3 1251788
245 1 0 $a Mechanical modeling of microelectronic packaging components for accelerated tests.
300 $a 137 p.
500 $a Advisers: Leon M. Keer; Morris E. Fine.
500 $a Source: Dissertation Abstracts International, Volume: 52-05, Section: B, page: 2640.
502 $a Thesis (Ph.D.)--Northwestern University, 1991.
520 $a Determining mechanical reliability of microelectronic components of aluminum thin-film interconnects and solder from accelerated tests has been studied theoretically. A failure model based on diffusion theory and fracture mechanics has been obtained for open-circuit failure of thin-film interconnects. A methodology has been given to predict the solder lifetime of thermomechanical fatigue from isothermal fatigue tests.
520 $a Voiding and open-circuit failures from cracking of Al alloy interconnects in integrated circuits are often observed in both isothermal aging and thermal fatigue tests with or without electric current flow. Although the effects of many factors on the failure rate have been investigated experimentally, it is not yet known how to extrapolate the results from accelerated tests to normal operating conditions. A theoretical model for open-circuit failures is constructed from the consideration of grain boundary and surface diffusion and fracture mechanics. The results from many investigations can be incorporated into this model to explain observed phenomena, such as, effects of temperature, interconnect stress, line thickness and width, passivation, hold time and frequency. The predicted results according to the present model show excellent agreement with experiments.
520 $a Mechanical behavior of eutectic Pb/Sn solder is studied under both isothermal and thermomechanical conditions. The major failure mechanisms of cracking along grain boundary or Sn/Pb interfaces are modelled as dislocation pile-ups at the boundaries. A thermomechanical fatigue life prediction methodology is developed based on this dislocation pile-up model. Using this methodology thermomechanical fatigue life was predicted from the corresponding isothermal tests. The predicted and experimental lives agree well.
590 $a School code: 0163.
650 4 $a Applied Mechanics. $3 1018410
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0346
690 $a 0544
690 $a 0794
710 2 0 $a Northwestern University. $3 1018161
773 0 $t Dissertation Abstracts International $g 52-05B.
790 $a 0163
790 1 0 $a Fine, Morris E., $e advisor
790 1 0 $a Keer, Leon M., $e advisor
791 $a Ph.D.
792 $a 1991
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9128990