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An analysis of thin film stress with...

Murray, Paul Edward.

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An analysis of thin film stress with application to thermal oxidation of silicon.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	An analysis of thin film stress with application to thermal oxidation of silicon./
Author:	Murray, Paul Edward.
Description:	130 p.
Notes:	Source: Dissertation Abstracts International, Volume: 50-06, Section: B, page: 2489.
Contained By:	Dissertation Abstracts International50-06B.
Subject:	Applied Mechanics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=8920788

An analysis of thin film stress with application to thermal oxidation of silicon.
Murray, Paul Edward.

An analysis of thin film stress with application to thermal oxidation of silicon. - 130 p.

Source: Dissertation Abstracts International, Volume: 50-06, Section: B, page: 2489.

Thesis (Ph.D.)--The University of Texas at Austin, 1989.

Thin silicon dioxide films are used in the semiconductor industry as components of integrated circuits. Film stress occurs in thermally grown oxides and there is a need to explain the nature of film stress and its role in the growth of thin films. We have developed a theoretical model to predict oxide film stress during growth. The analysis indicates that film stress is related to the molar volume difference between silicon and oxide. Experimental measurements of average film stress agree well with our predictions. To model the growth rate of thin films, we include the influence of stress on the transport of oxygen through the film. Treating oxide as a compressible, Newtonian fluid and solving the governing equations by a finite element method enables us to predict the growth rate of non-planar oxide films. Applying this method to the case of trench oxidation reveals the effect of trench corners on oxide film pressure and velocity.Subjects--Topical Terms:

1018410
Applied Mechanics.

An analysis of thin film stress with application to thermal oxidation of silicon.
LDR:01793nam 2200253 a 45 001 928326
005 20110426
008 110426s1989 eng d
035 $a (UnM)AAI8920788
035 $a AAI8920788
040 $a UnM $c UnM
100 1 $a Murray, Paul Edward. $3 1251787
245 1 0 $a An analysis of thin film stress with application to thermal oxidation of silicon.
300 $a 130 p.
500 $a Source: Dissertation Abstracts International, Volume: 50-06, Section: B, page: 2489.
500 $a Supervisor: Graham F. Carey.
502 $a Thesis (Ph.D.)--The University of Texas at Austin, 1989.
520 $a Thin silicon dioxide films are used in the semiconductor industry as components of integrated circuits. Film stress occurs in thermally grown oxides and there is a need to explain the nature of film stress and its role in the growth of thin films. We have developed a theoretical model to predict oxide film stress during growth. The analysis indicates that film stress is related to the molar volume difference between silicon and oxide. Experimental measurements of average film stress agree well with our predictions. To model the growth rate of thin films, we include the influence of stress on the transport of oxygen through the film. Treating oxide as a compressible, Newtonian fluid and solving the governing equations by a finite element method enables us to predict the growth rate of non-planar oxide films. Applying this method to the case of trench oxidation reveals the effect of trench corners on oxide film pressure and velocity.
590 $a School code: 0227.
650 4 $a Applied Mechanics. $3 1018410
690 $a 0346
710 2 0 $a The University of Texas at Austin. $3 718984
773 0 $t Dissertation Abstracts International $g 50-06B.
790 $a 0227
790 1 0 $a Carey, Graham F., $e advisor
791 $a Ph.D.
792 $a 1989
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=8920788