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Electrostatic (Langmuir) probe measu...

University of Kansas., Electrical Engineering & Computer Science.

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Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas ./
Author:	Pathak, Bogdan Amaru.
Description:	170 p.
Notes:	Advisers: Karen J. Nordheden; Rongqing Hui.
Contained By:	Masters Abstracts International47-01.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1454295
ISBN:	9780549650973

Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
Pathak, Bogdan Amaru.

Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas . - 170 p.

Advisers: Karen J. Nordheden; Rongqing Hui.

Thesis (M.S.)--University of Kansas, 2008.

A Langmuir probe diagnostic system was developed to measure the electron density distribution in BCl3/N2 mixtures to determine if an average electron energy increase might be partially responsible for the previously observed etch rate enhancement of GaAs with nitrogen addition. The system was validated in both helium and nitrogen plasmas. Probe measurements showed that as the nitrogen concentration in BCl3/N2 plasmas increased, the average electron energy actually decreased (5.52 eV 0% N2, 4.14 eV 30% N2, and 3.69 eV 60% N 2). However, an increase in negative ion density was observed with nitrogen addition reaching a maximum at 40% N2. Although negative ions play no role in etching, this trend seems to correlate with the observed etch rate enhancement. A plausible explanation for both the increase in etch species and the increase in negative ion density is an increase in dissociation due to energy transfer from N2 metastables.

ISBN: 9780549650973Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
LDR:02091nmm 2200337 a 45 001 891367
005 20101111
008 101111s2008 ||||||||||||||||| ||eng d
020 $a 9780549650973
035 $a (UMI)AAI1454295
035 $a AAI1454295
040 $a UMI $c UMI
100 1 $a Pathak, Bogdan Amaru. $3 1065361
245 1 0 $a Electrostatic (Langmuir) probe measurements in RF driven helium, nitrogen, boron chloride, and boron chloride/nitrogen plasmas .
300 $a 170 p.
500 $a Advisers: Karen J. Nordheden; Rongqing Hui.
500 $a Includes supplementary digital materials.
500 $a Source: Masters Abstracts International, Volume: 47-01, page: 0508.
502 $a Thesis (M.S.)--University of Kansas, 2008.
520 $a A Langmuir probe diagnostic system was developed to measure the electron density distribution in BCl3/N2 mixtures to determine if an average electron energy increase might be partially responsible for the previously observed etch rate enhancement of GaAs with nitrogen addition. The system was validated in both helium and nitrogen plasmas. Probe measurements showed that as the nitrogen concentration in BCl3/N2 plasmas increased, the average electron energy actually decreased (5.52 eV 0% N2, 4.14 eV 30% N2, and 3.69 eV 60% N 2). However, an increase in negative ion density was observed with nitrogen addition reaching a maximum at 40% N2. Although negative ions play no role in etching, this trend seems to correlate with the observed etch rate enhancement. A plausible explanation for both the increase in etch species and the increase in negative ion density is an increase in dissociation due to energy transfer from N2 metastables.
590 $a School code: 0099.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Physics, Fluid and Plasma. $3 1018402
690 $a 0544
690 $a 0759
690 $a 0794
710 2 $a University of Kansas. $b Electrical Engineering & Computer Science. $3 1018713
773 0 $t Masters Abstracts International $g 47-01.
790 $a 0099
790 1 0 $a Allen, Christopher $e committee member
790 1 0 $a Hui, Rongqing, $e advisor
790 1 0 $a Nordheden, Karen J., $e advisor
790 1 0 $a Prescott, Glenn $e committee member
791 $a M.S.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1454295