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Nanoscale transistors : = device phy...

Guo, Jing, (1977-)

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Nanoscale transistors : = device physics, modeling and simulation /

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Nanoscale transistors :/ Mark S. Lundstrom, Jing Guo.
Reminder of title:	device physics, modeling and simulation /
Author:	Lundstrom, Mark.
other author:	Guo, Jing,
Published:	New York :Springer, : c2006.,
Description:	vi, 217 p. :ill. ;25 cm.
Subject:	Metal oxide semiconductor field-effect transistors - Mathematical models. -
Online resource:	http://site.ebrary.com/lib/stanford/Doc?id=10133999Available to Stanford-affiliated users at:
Online resource:	http://www.myilibrary.com?id=61221Available to Stanford-affiliated users at:
Online resource:	http://www.springerlink.com/openurl.asp?genre=book&isbn=978-0-387-28002-8Available to Stanford-affiliated users at:
Online resource:	http://www.loc.gov/catdir/toc/fy0608/2005933746.html
Online resource:	http://www.loc.gov/catdir/enhancements/fy0663/2005933746-d.html
Online resource:	http://www.loc.gov/catdir/enhancements/fy0819/2005933746-b.html
Online resource:	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=014600648&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
Online resource:	http://deposit.ddb.de/cgi-bin/dokserv?id=2737947&prov=M&dok_var=1&dok_ext=htm
ISBN:	0387280022

Nanoscale transistors : = device physics, modeling and simulation /
Lundstrom, Mark.

Nanoscale transistors :device physics, modeling and simulation /Mark S. Lundstrom, Jing Guo. - New York :Springer,c2006. - vi, 217 p. :ill. ;25 cm.

Includes bibliographical references and index.

"Nanoscale transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanostransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors." "The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices."--BOOK JACKET.

ISBN: 0387280022

LCCN: 2005933746Subjects--Topical Terms:

914001
Metal oxide semiconductor field-effect transistors
--Mathematical models.

LC Class. No.: TK7871.95 / .N36 2006

Dewey Class. No.: 621.381528

Nanoscale transistors : = device physics, modeling and simulation /
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504 $a Includes bibliographical references and index.
520 1 $a "Nanoscale transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanostransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors." "The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices."--BOOK JACKET.
650 0 $a Metal oxide semiconductor field-effect transistors $x Mathematical models. $3 914001
650 0 $a Nanostructured materials $x Mathematical models. $3 899453
650 0 $a Nanotechnology. $3 526235
700 1 $a Guo, Jing, $d 1977- $3 1047968
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