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Fatigue modeling of nano-structured ...

Georgia Institute of Technology.

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Fatigue modeling of nano-structured chip-to-package interconnections.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Fatigue modeling of nano-structured chip-to-package interconnections./
Author:	Koh, Sau W.
Description:	204 p.
Notes:	Adviser: Rao Tummala.
Contained By:	Dissertation Abstracts International70-06B.
Subject:	Applied Mechanics. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3364229
ISBN:	9781109245660

Fatigue modeling of nano-structured chip-to-package interconnections.
Koh, Sau W.

Fatigue modeling of nano-structured chip-to-package interconnections. - 204 p.

Adviser: Rao Tummala.

Thesis (Ph.D.)--Georgia Institute of Technology, 2009.

Driven by the need to increase the system functionality and concomitant decrease in the feature size, the International Technology Roadmap for Semi-conductors (ITRS) has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials that have been used for many decades as interconnections in flip chip technology will not be able to satisfy the thermal mechanical requirements of these fine pitch electronic packages. Of all the known interconnect technologies, interconnects such as those made from nanocrystalline copper are the most promising for meeting the high mechanical and electrical performance requirements of next generation devices. However, there is a need to understand their properties of these materials such as deformation mechanisms and microstructural stability. Accordingly, the goal of this research is to study the mechanical strength and fatigue behavior of nanocrystalline copper using atomistic simulations and to evaluate their performance as nanostructured interconnect materials.

ISBN: 9781109245660Subjects--Topical Terms:

1018410
Applied Mechanics.

Fatigue modeling of nano-structured chip-to-package interconnections.
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020 $a 9781109245660
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100 1 $a Koh, Sau W. $3 1035716
245 1 0 $a Fatigue modeling of nano-structured chip-to-package interconnections.
300 $a 204 p.
500 $a Adviser: Rao Tummala.
500 $a Source: Dissertation Abstracts International, Volume: 70-06, Section: B, page: .
502 $a Thesis (Ph.D.)--Georgia Institute of Technology, 2009.
520 $a Driven by the need to increase the system functionality and concomitant decrease in the feature size, the International Technology Roadmap for Semi-conductors (ITRS) has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials that have been used for many decades as interconnections in flip chip technology will not be able to satisfy the thermal mechanical requirements of these fine pitch electronic packages. Of all the known interconnect technologies, interconnects such as those made from nanocrystalline copper are the most promising for meeting the high mechanical and electrical performance requirements of next generation devices. However, there is a need to understand their properties of these materials such as deformation mechanisms and microstructural stability. Accordingly, the goal of this research is to study the mechanical strength and fatigue behavior of nanocrystalline copper using atomistic simulations and to evaluate their performance as nanostructured interconnect materials.
520 $a The results from the crack growth analysis indicate that nanocrystalline copper is in fact a suitable candidate for ultra-fine pitch interconnects applications. This study also predicts that crack growth is a relatively small portion of the total fatigue life of interconnects under low cycle fatigue (LCF) conditions.
520 $a Simulation results of this research have shown that higher amounts of grain rotation that require grain boundaries sliding is the dominant deformation mechanism in the inverse Hall-Petch regime. Hence, it is shown that there is competition between the dislocation activity and grain boundary sliding as the main deformation mode in nanocrystalline materials and the grain size is extremely important in determining the dominant mode.
520 $a This research has also shown that stress induced grain coarsening is the main reason for loss of mechanical performance of nanocrystalline copper during cyclic loading. Further, the simulation results have shown that grain growth during fatigue loading is assisted by the dislocation activity and grain boundary migration. A fatigue model for nanostructured interconnects has been developed in this research using the above observations.
520 $a Lastly, simulation results have shown that addition of the antimony into nanocrystalline copper that readily segregates to the grain boundary will not only increase the microstructure stability during cyclic loading, it will also increase its strength.
590 $a School code: 0078.
650 4 $a Applied Mechanics. $3 1018410
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Metallurgy. $3 1023648
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710 2 $a Georgia Institute of Technology. $3 696730
773 0 $t Dissertation Abstracts International $g 70-06B.
790 $a 0078
790 1 0 $a Tummala, Rao, $e advisor
791 $a Ph.D.
792 $a 2009
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3364229