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Silicon carbide pressure sensors and...

Case Western Reserve University.

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Silicon carbide pressure sensors and infra-red emitters.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Silicon carbide pressure sensors and infra-red emitters./
Author:	Chen, Li.
Description:	203 p.
Notes:	Adviser: Mehran Mehregany.
Contained By:	Dissertation Abstracts International68-10B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3285418
ISBN:	9780549290605

Silicon carbide pressure sensors and infra-red emitters.
Chen, Li.

Silicon carbide pressure sensors and infra-red emitters. - 203 p.

Adviser: Mehran Mehregany.

Thesis (Ph.D.)--Case Western Reserve University, 2008.

The potential of low-stress, heavily-nitrogen-doped, (111)-oriented polycrystalline 3C-silicon carbide (poly-SiC) formed by LPCVD as an advanced MEMS material for harsh-environment and demanding applications was studied through the development and characterization of two MEMS devices: pressure sensor and IR emitter.

ISBN: 9780549290605Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Silicon carbide pressure sensors and infra-red emitters.
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020 $a 9780549290605
035 $a (UMI)AAI3285418
035 $a AAI3285418
040 $a UMI $c UMI
100 1 $a Chen, Li. $3 1018741
245 1 0 $a Silicon carbide pressure sensors and infra-red emitters.
300 $a 203 p.
500 $a Adviser: Mehran Mehregany.
500 $a Source: Dissertation Abstracts International, Volume: 68-10, Section: B, page: 6842.
502 $a Thesis (Ph.D.)--Case Western Reserve University, 2008.
520 $a The potential of low-stress, heavily-nitrogen-doped, (111)-oriented polycrystalline 3C-silicon carbide (poly-SiC) formed by LPCVD as an advanced MEMS material for harsh-environment and demanding applications was studied through the development and characterization of two MEMS devices: pressure sensor and IR emitter.
520 $a A research prototype of a low-cost, miniature, mass-producible sensor for measurement of high pressure at operating temperatures of 300°C to 600°C, e.g., in-cylinder engine pressure monitoring applications, was developed. This all-SiC capacitive sensor, i.e., a SiC diaphragm on a SiC substrate, takes advantage of the excellent harsh environment material properties of SiC and was fabricated by surface micromachining. The sensor was packaged in a high-temperature ceramic package and characterized under static pressures of up to &sim;5MPa (700psi) and temperatures of up to 574°C in a custom chamber. An instrumentation amplifier integrated circuit was used to convert capacitance into voltage for measurements up to 300°C; beyond 300°C, the capacitance was measured directly from an array of identical sensor elements using a LCZ meter. After high temperature soaking and several tens of temperature/pressure cycles, packaged sensors continued to show stable operation. The sensor was also packaged in a custom probe and successfully demonstrated dynamic pressure monitoring after being inserted into the cylinder head of a research internal combustion engine.
520 $a A thermal infrared emitter (blackbody) capable of fast thermal cycling was realized for pulsed operation at high frequency using free-standing poly-SiC micro-bridge elements. High emissivity, high thermal conductivity, low thermal mass and excellent mechanical robustness of poly-SiC enable this development. Poly-SiC's peak emission wavelength falls in the range of short wavelength infrared. Devices were pulsed at frequencies up to 100Hz with modulation depth near 50%. Materials analysis examining the surfaces of pre- and postheated emitter elements was performed using Auger electron spectroscopy (AES) and showed extremely low oxidation effect up to about 700°C. Poly-SiC micro-hotplate-based IR emitter platforms, including poly-SiC heating and sensing resistors, were used for a reliability study using an accelerated degradation methodology testing. For comparison, platinum (Pt) was used on another set of otherwise similar SiC micro-hotplates for the heating and sensing elements. Results show that Pt will rapidly degrade when operated above &sim;800°C, while poly-SiC is stable up to &sim;1100°C. In short, poly-SiC stands out for many higher-temperature applications, thanks to its outstanding material properties and chemical stability.
590 $a School code: 0042.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 $a Case Western Reserve University. $3 1017714
773 0 $t Dissertation Abstracts International $g 68-10B.
790 $a 0042
790 1 0 $a Mehregany, Mehran, $e advisor
791 $a Ph.D.
792 $a 2008
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3285418