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2D Wide Bandgap Transition Metal Oxi...

Ping, Lu,

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2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies /

Record Type:	Electronic resources : Monograph/item
Title/Author:	2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies // Lu Ping.
Author:	Ping, Lu,
Description:	1 electronic resource (146 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-03, Section: B.
Contained By:	Dissertations Abstracts International86-03B.
Subject:	Materials science. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31491362
ISBN:	9798384080053

2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies /
Ping, Lu,

2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies /Lu Ping. - 1 electronic resource (146 pages)

Source: Dissertations Abstracts International, Volume: 86-03, Section: B.

Wide bandgap (WBG) semiconductors (Eg >2.0 eV) in two-dimensional (2D) form have demonstrated great potential in 2D electronics, optoelectronics, and power industries. However, as an essential group of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely understudied in terms of physical properties and applications in 2D electronic devices due to the lack of sufficiently large 2D crystals. Here, we accomplish the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the largest ever reported lateral domain size (>20 µm). Besides, the process is studied via various X-ray techniques and provides significant insights on the morphology, structure and electronic band structure variation. Moreover, temperature associated defects are monitored by in-situ X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS) and low energy inverse photoemission spectroscopy (LEIPS) are demonstrated to characterize band structure of materials, to establish a relation between structural defects and electronic properties.

English

ISBN: 9798384080053Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Wide bandgap

2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies /
LDR:02576nmm a22004453i 4500 001 2438651
005 20260727134406.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798384080053
035 $a (MiAaPQD)AAI31491362
035 $a AAI31491362
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Ping, Lu, $e author. $0 (orcid)0009-0005-6072-1920 $3 3830020
245 1 0 $a 2D Wide Bandgap Transition Metal Oxides: Synthesis and Photoelectron Spectroscopic Studies / $c Lu Ping.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (146 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 86-03, Section: B.
500 $a Advisors: Ling, Xi Committee members: Smith, Kevin E.; Doerrer, Linda H.; Brown, Keith A.
502 $b Ph.D. $c Boston University $d 2024.
520 $a Wide bandgap (WBG) semiconductors (Eg >2.0 eV) in two-dimensional (2D) form have demonstrated great potential in 2D electronics, optoelectronics, and power industries. However, as an essential group of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely understudied in terms of physical properties and applications in 2D electronic devices due to the lack of sufficiently large 2D crystals. Here, we accomplish the synthesis of WBG 2D nickel oxide (NiO) (Eg > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH)2) with the largest ever reported lateral domain size (>20 µm). Besides, the process is studied via various X-ray techniques and provides significant insights on the morphology, structure and electronic band structure variation. Moreover, temperature associated defects are monitored by in-situ X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS) and low energy inverse photoemission spectroscopy (LEIPS) are demonstrated to characterize band structure of materials, to establish a relation between structural defects and electronic properties.
546 $a English
590 $a School code: 0017
650 4 $a Materials science. $3 543314
650 4 $a Physical chemistry. $3 1981412
650 4 $a Analytical chemistry. $3 3168300
650 4 $a Mechanical engineering. $3 649730
653 $a Wide bandgap
653 $a Transition metal oxides
653 $a Semiconductors
653 $a Two-dimensional
653 $a X-ray techniques
690 $a 0794
690 $a 0486
690 $a 0548
690 $a 0494
710 2 $a Boston University. $b Materials Science & Engineering ENG. $e degree granting institution. $3 3821526
720 1 $a Ling, Xi $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-03B.
790 $a 0017
791 $a Ph.D.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31491362