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Structural and Electronic Coupling i...

McDowell, Benjamin W.,

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Structural and Electronic Coupling in Nanoscale Materials /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Structural and Electronic Coupling in Nanoscale Materials // Benjamin W McDowell.
Author:	McDowell, Benjamin W.,
Description:	1 electronic resource (195 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
Subject:	Physical chemistry. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31141108
ISBN:	9798382579726

Structural and Electronic Coupling in Nanoscale Materials /
McDowell, Benjamin W.,

Structural and Electronic Coupling in Nanoscale Materials /Benjamin W McDowell. - 1 electronic resource (195 pages)

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

As modern electronic devices continue to shrink in size, the limitations of Si as a transistor material become increasingly imminent. To overcome these limitations, it is necessary to explore alternative materials that can be used in electronic devices that surpass the miniaturization limit of Si-based devices. In this effort, it is important to develop an understanding of how materials behave when they are reduced in size and scale down to ultra-thin structures. Here, we explore how ultra-thin dielectric materials behave differently than their bulk counterparts, experiencing chemical interactions at interfaces that can result in unexpected structures and electronic properties. By using a combination of scanning tunneling microscopy/spectroscopy and density functional theory, we study several manifestations of distinct structural and electronic properties arising in ultra-thin materials. We extend this physical picture to understand how the properties of these films affect adsorbed nanostructures, analogous to interactions occurring in a transistor setting.

English

ISBN: 9798382579726Subjects--Topical Terms:

1981412
Physical chemistry.
Subjects--Index Terms:

Electronic devices

Structural and Electronic Coupling in Nanoscale Materials /
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300 $a 1 electronic resource (195 pages)
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500 $a Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
500 $a Advisors: Nazin, George; Hendon, Christopher Committee members: Lonergan, Mark; Aleman, Benjamin.
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520 $a As modern electronic devices continue to shrink in size, the limitations of Si as a transistor material become increasingly imminent. To overcome these limitations, it is necessary to explore alternative materials that can be used in electronic devices that surpass the miniaturization limit of Si-based devices. In this effort, it is important to develop an understanding of how materials behave when they are reduced in size and scale down to ultra-thin structures. Here, we explore how ultra-thin dielectric materials behave differently than their bulk counterparts, experiencing chemical interactions at interfaces that can result in unexpected structures and electronic properties. By using a combination of scanning tunneling microscopy/spectroscopy and density functional theory, we study several manifestations of distinct structural and electronic properties arising in ultra-thin materials. We extend this physical picture to understand how the properties of these films affect adsorbed nanostructures, analogous to interactions occurring in a transistor setting.
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650 4 $a Physical chemistry. $3 1981412
650 4 $a Chemistry. $3 516420
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653 $a Electronic devices
653 $a Transistor material
653 $a Ultra-thin materials
653 $a Nanoscale materials
690 $a 0494
690 $a 0794
690 $a 0485
710 2 $a University of Oregon. $b Department of Chemistry and Biochemistry. $e degree granting institution. $3 3817173
720 1 $a Nazin, George $e degree supervisor.
720 1 $a Hendon, Christopher $e degree supervisor.
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