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Developing Electronic and Optoelectr...

Senckowski, Alexander Zenon,

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Developing Electronic and Optoelectronic Devices and Sensors With Wide Bandgap Semiconductors /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Developing Electronic and Optoelectronic Devices and Sensors With Wide Bandgap Semiconductors // Alexander Zenon Senckowski.
Author:	Senckowski, Alexander Zenon,
Description:	1 electronic resource (193 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
Contained By:	Dissertations Abstracts International86-12B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31933064
ISBN:	9798280723351

Developing Electronic and Optoelectronic Devices and Sensors With Wide Bandgap Semiconductors /
Senckowski, Alexander Zenon,

Developing Electronic and Optoelectronic Devices and Sensors With Wide Bandgap Semiconductors /Alexander Zenon Senckowski. - 1 electronic resource (193 pages)

Source: Dissertations Abstracts International, Volume: 86-12, Section: B.

Electronics, optoelectronics and sensors are ubiquitous in contemporary society. The advancement of society will require a new generation of devices. This research is focused on the development of power electronics, optoelectronics and sensors fabricated with wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors. WBG and UWBG materials have properties that give them advantages over currently used materials in power electronics, optoelectronics and sensors. However, their superior material properties must be properly utilized to make the next generations of devices possible. This work addresses this by developing devices and processes with β-gallium oxide (Ga2O3) an UWBG material and, 4H-silicon carbide (4H-SiC) a WBG material.The first device is a simulated Ga2O3 lateral power transistor. By incorporating several current or near-term technologies, this lateral device, once optimized through simulations has superior performance to a vertical device. The performance of the device demonstrates the advantages of using UWBG materials in power electronics. An annealing encapsulant is developed for Ga2O3 for increased ion implant activation efficiency. This encapsulant will make new device architectures possible with Ga2O3. By making use of the UWBG of Ga2O3 an ultraviolet photodetector is developed and tested that is naturally solar blind. The relatively simple fabrication and architecture are only possible due to the UWBG of Ga2O3.4H-SiC has an extremely high melting point. This material advantage is used in the development of a remote wireless radio-frequency passive antenna temperature sensor (antenna temperature sensor) for extreme temperatures. The device is designed, fabricated and demonstrated.Finally, a closed-form equation based on an equivalent circuit model is developed to describe the mutual coupling between the antenna temperature sensor and a remote readout antenna.

English

ISBN: 9798280723351Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Gallium oxide

Developing Electronic and Optoelectronic Devices and Sensors With Wide Bandgap Semiconductors /
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520 $a Electronics, optoelectronics and sensors are ubiquitous in contemporary society. The advancement of society will require a new generation of devices. This research is focused on the development of power electronics, optoelectronics and sensors fabricated with wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors. WBG and UWBG materials have properties that give them advantages over currently used materials in power electronics, optoelectronics and sensors. However, their superior material properties must be properly utilized to make the next generations of devices possible. This work addresses this by developing devices and processes with β-gallium oxide (Ga2O3) an UWBG material and, 4H-silicon carbide (4H-SiC) a WBG material.The first device is a simulated Ga2O3 lateral power transistor. By incorporating several current or near-term technologies, this lateral device, once optimized through simulations has superior performance to a vertical device. The performance of the device demonstrates the advantages of using UWBG materials in power electronics. An annealing encapsulant is developed for Ga2O3 for increased ion implant activation efficiency. This encapsulant will make new device architectures possible with Ga2O3. By making use of the UWBG of Ga2O3 an ultraviolet photodetector is developed and tested that is naturally solar blind. The relatively simple fabrication and architecture are only possible due to the UWBG of Ga2O3.4H-SiC has an extremely high melting point. This material advantage is used in the development of a remote wireless radio-frequency passive antenna temperature sensor (antenna temperature sensor) for extreme temperatures. The device is designed, fabricated and demonstrated.Finally, a closed-form equation based on an equivalent circuit model is developed to describe the mutual coupling between the antenna temperature sensor and a remote readout antenna.
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650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
650 4 $a Optics. $3 517925
653 $a Gallium oxide
653 $a Optoelectronics
653 $a Radio frequency
653 $a Sensor
653 $a Silicon carbide
653 $a Wide bandgap
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710 2 $a University of Massachusetts Lowell. $b Electrical Engineering. $e degree granting institution. $3 3817049
720 1 $a Lu, Xuejun $e degree supervisor.
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