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Ultra-Wide Bandgap Semiconductors Al...

Herath Mudiyanselage, Dinusha Indunil Bandara Mawathagama,

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Ultra-Wide Bandgap Semiconductors Aluminum Nitride and Gallium Oxide for Next-Generation Efficient Power Electronics /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Ultra-Wide Bandgap Semiconductors Aluminum Nitride and Gallium Oxide for Next-Generation Efficient Power Electronics // Dinusha Indunil Bandara Mawathagama Herath Mudiyanselage.
Author:	Herath Mudiyanselage, Dinusha Indunil Bandara Mawathagama,
Description:	1 electronic resource (107 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-10, Section: B.
Contained By:	Dissertations Abstracts International86-10B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31848595
ISBN:	9798311941273

Ultra-Wide Bandgap Semiconductors Aluminum Nitride and Gallium Oxide for Next-Generation Efficient Power Electronics /
Herath Mudiyanselage, Dinusha Indunil Bandara Mawathagama,

Ultra-Wide Bandgap Semiconductors Aluminum Nitride and Gallium Oxide for Next-Generation Efficient Power Electronics /Dinusha Indunil Bandara Mawathagama Herath Mudiyanselage. - 1 electronic resource (107 pages)

Source: Dissertations Abstracts International, Volume: 86-10, Section: B.

Recently, Aluminum Nitride (AlN - 6.2 eV) and Gallium Oxide (β-Ga2O3 - 4.9 eV) have garnered significant attention as two promising ultra-wide bandgap (UWBG) semiconductors for power electronic applications. Their popularity mainly stems from high bandgaps and high breakdown fields. Additionally, high-quality epilayers can be grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Both AlN and Ga2O3 have high Baliga's Figure of Merit compared to Si, with values of ~40,000 for AlN and ~3,000 for Ga2O3, making them ideal candidates for efficient, high-power, high-voltage electronic devices.Chapter 1 introduces UWBG materials for power electronics, highlighting key properties of AlN and β-Ga2O3. It includes a brief review of electronic devices demonstrated with both materials and an overview of theoretical aspects of electric power conversion.Chapter 2 delves into the development of AlN Schottky barrier diodes (SBDs) on AlN bulk substrates. This chapter details the first demonstration of 3 kV AlN-on-AlN SBDs, improvements in Ohmic contacts to AlN epilayers, studies on low ideality factors SBDs and high-temperature performance of Ohmic contacts and SBDs.Chapter 3 focuses on AlN-based heterostructure diodes. BN can serve as excellent UWBG material to passivate AlN-based devices. As an initial demonstration, BN epilayers grown on AlN via microwave plasma chemical vapor deposition (MPCVD) were used to demonstrate metal-insulator-semiconductor (MIS) diodes. The electronic properties of the MIS diode were also investigated. One of the significant challenges in UWBG semiconductors is the lack of viable p-type doping due to the high activation energy of acceptors. This chapter also discusses using p-type NiOx as a viable solution for creating p-n diodes with UWBG semiconductors, specifically in developing NiOx/AlN p-n diodes with reduced leakage current compared to AlN SBDs.Chapter 4 focuses on Ga2O3-based devices. The first half of this chapter investigates β-(AlxGa1−x)2O3/Ga2O3 heterostructure vertical SBDs, elucidating the mechanisms behind their forward and reverse currents. The second half examines the anisotropic properties of NiOx/β-Ga2O3 heterojunction diodes by analyzing their electrical properties in different crystal orientations.Chapter 5 outlines the future directions of this research, while the final chapter provides a conclusion and an outlook.

English

ISBN: 9798311941273Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Aluminum Nitride

Ultra-Wide Bandgap Semiconductors Aluminum Nitride and Gallium Oxide for Next-Generation Efficient Power Electronics /
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500 $a Source: Dissertations Abstracts International, Volume: 86-10, Section: B.
500 $a Advisors: Fu, Houqiang Committee members: Kalarickal, Nidhin Kurian; Esqueda, Ivan Sanchez; Goodnick, Stephen M.
502 $b Ph.D. $c Arizona State University $d 2025.
520 $a Recently, Aluminum Nitride (AlN - 6.2 eV) and Gallium Oxide (β-Ga2O3 - 4.9 eV) have garnered significant attention as two promising ultra-wide bandgap (UWBG) semiconductors for power electronic applications. Their popularity mainly stems from high bandgaps and high breakdown fields. Additionally, high-quality epilayers can be grown using molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Both AlN and Ga2O3 have high Baliga's Figure of Merit compared to Si, with values of ~40,000 for AlN and ~3,000 for Ga2O3, making them ideal candidates for efficient, high-power, high-voltage electronic devices.Chapter 1 introduces UWBG materials for power electronics, highlighting key properties of AlN and β-Ga2O3. It includes a brief review of electronic devices demonstrated with both materials and an overview of theoretical aspects of electric power conversion.Chapter 2 delves into the development of AlN Schottky barrier diodes (SBDs) on AlN bulk substrates. This chapter details the first demonstration of 3 kV AlN-on-AlN SBDs, improvements in Ohmic contacts to AlN epilayers, studies on low ideality factors SBDs and high-temperature performance of Ohmic contacts and SBDs.Chapter 3 focuses on AlN-based heterostructure diodes. BN can serve as excellent UWBG material to passivate AlN-based devices. As an initial demonstration, BN epilayers grown on AlN via microwave plasma chemical vapor deposition (MPCVD) were used to demonstrate metal-insulator-semiconductor (MIS) diodes. The electronic properties of the MIS diode were also investigated. One of the significant challenges in UWBG semiconductors is the lack of viable p-type doping due to the high activation energy of acceptors. This chapter also discusses using p-type NiOx as a viable solution for creating p-n diodes with UWBG semiconductors, specifically in developing NiOx/AlN p-n diodes with reduced leakage current compared to AlN SBDs.Chapter 4 focuses on Ga2O3-based devices. The first half of this chapter investigates β-(AlxGa1−x)2O3/Ga2O3 heterostructure vertical SBDs, elucidating the mechanisms behind their forward and reverse currents. The second half examines the anisotropic properties of NiOx/β-Ga2O3 heterojunction diodes by analyzing their electrical properties in different crystal orientations.Chapter 5 outlines the future directions of this research, while the final chapter provides a conclusion and an outlook.
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650 4 $a Electrical engineering. $3 649834
650 4 $a Applied physics. $3 3343996
650 4 $a Engineering. $3 586835
653 $a Aluminum Nitride
653 $a Gallium Oxide
653 $a Power electronics
653 $a Ultra-wide bandgap semiconductors
653 $a Semiconductors
690 $a 0544
690 $a 0537
690 $a 0215
710 2 $a Arizona State University. $b Electrical Engineering. $e degree granting institution. $3 3771820
720 1 $a Fu, Houqiang $e degree supervisor.
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791 $a Ph.D.
792 $a 2025
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31848595