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Mechanistic Insights Into van der Wa...
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Chu, Ting-Ching,
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Mechanistic Insights Into van der Waals Thin-Film Ferroelectric Semiconductor Field-Effect Transistors and Photodetectors /
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Mechanistic Insights Into van der Waals Thin-Film Ferroelectric Semiconductor Field-Effect Transistors and Photodetectors // Ting-Ching Chu.
作者:
Chu, Ting-Ching,
面頁冊數:
1 electronic resource (226 pages)
附註:
Source: Dissertations Abstracts International, Volume: 86-09, Section: B.
Contained By:
Dissertations Abstracts International86-09B.
標題:
Applied physics. -
電子資源:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31769588
ISBN:
9798310149601
Mechanistic Insights Into van der Waals Thin-Film Ferroelectric Semiconductor Field-Effect Transistors and Photodetectors /
Chu, Ting-Ching,
Mechanistic Insights Into van der Waals Thin-Film Ferroelectric Semiconductor Field-Effect Transistors and Photodetectors /
Ting-Ching Chu. - 1 electronic resource (226 pages)
Source: Dissertations Abstracts International, Volume: 86-09, Section: B.
This thesis explores the potential of two-dimensional (2D) or van der Waals (vdW) materials for ferroelectric semiconductor field-effect transistors (FeS-FET) and photodetector applications. The research focuses on functional imaging characterization of devices to gain insights into their operation mechanisms.Gate-poling dependent electrical and optoelectronic characterization of 2D FeS-FETs reveals that their resistive switching behavior depends on both ferroelectric polarization switching and structural changes. These same techniques are applied to study ferroelectric semiconductor source-gated transistors (FeS-SGTs), where resistive switching behavior originates from the effective tuning of energy band offset between semiconductors, and strong current saturation is attributed to electron depletion in the channel material.Polarization-dependent photocurrent measurements are conducted to investigate the bulk photovoltaic effect (BPVE) in polar 2D vdW thin-film photodetectors. Spatially and spectrally resolved photocurrent measurements are used to investigate the photocurrent generation mechanism in all-printed nanomaterial photodetectors, which is dominated by photoconductive effect.
English
ISBN: 9798310149601Subjects--Topical Terms:
3343996
Applied physics.
Subjects--Index Terms:
Photodetector applications
Mechanistic Insights Into van der Waals Thin-Film Ferroelectric Semiconductor Field-Effect Transistors and Photodetectors /
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This thesis explores the potential of two-dimensional (2D) or van der Waals (vdW) materials for ferroelectric semiconductor field-effect transistors (FeS-FET) and photodetector applications. The research focuses on functional imaging characterization of devices to gain insights into their operation mechanisms.Gate-poling dependent electrical and optoelectronic characterization of 2D FeS-FETs reveals that their resistive switching behavior depends on both ferroelectric polarization switching and structural changes. These same techniques are applied to study ferroelectric semiconductor source-gated transistors (FeS-SGTs), where resistive switching behavior originates from the effective tuning of energy band offset between semiconductors, and strong current saturation is attributed to electron depletion in the channel material.Polarization-dependent photocurrent measurements are conducted to investigate the bulk photovoltaic effect (BPVE) in polar 2D vdW thin-film photodetectors. Spatially and spectrally resolved photocurrent measurements are used to investigate the photocurrent generation mechanism in all-printed nanomaterial photodetectors, which is dominated by photoconductive effect.
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