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Ohmic contacts to beta silicon carbi...

Chen, Jen-Sue,

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Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations // Jen-Sue Chen.
Author:	Chen, Jen-Sue,
Description:	1 electronic resource (106 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 56-09, Section: B.
Contained By:	Dissertations Abstracts International56-09B.
Subject:	Materials science. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9509969
ISBN:	9798209386728

Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations /
Chen, Jen-Sue,

Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations /Jen-Sue Chen. - 1 electronic resource (106 pages)

Source: Dissertations Abstracts International, Volume: 56-09, Section: B.

Thermally induced reactions between a sputter-deposited Re, Pt or Ta film and a single crystalline (001) $\\beta$-SiC substrate in vacuum at temperatures from 300 to 1200$\\sp\\circ$C for 30 min or 1 h are investigated by backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, transmission and scanning electron microscopies. The contact resistivities of the as-deposited and annealed Pt, Re, and Ta films to n-type $\\beta$-SiC are characterized using circular contact patterns with transmission line model. Re does not react with SiC up to 1100$\\sp\\circ$C. This finding also coincides with our calculations of the free energy of reactions from critically assessed thermodynamic data for rhenium silicides and SiC. A thin amorphous interlayer forms between Pt and SiC upon annealing at 400$\\sp\\circ$C. Samples annealed at 500-900$\\sp\\circ$C have a double-layer structure with a silicide surface layer and a carbon-silicide mixed layer below. The main product phase is Pt$\\sb3$Si at 500$\\sp\\circ$C, and at is Pt$\\sb2$Si 600-900$\\sp\\circ$C. Both Pt$\\sb2$Si and PtSi are detected upon annealing at 1000$\\sp\\circ$C with the formation of dendrite-like hillocks. Ta reacts with SiC upon annealing at 900$\\sp\\circ$C. At 1000$\\sp\\circ$C, the reaction zone possesses a multilayered structure of $\\beta$-SiC/TaC/carbon-stabilized $\\rm Ta\\sb5Si\\sb3/\\alpha$-$\\rm Ta\\sb5Si\\sb3/Ta\\sb2$C. The equilibrium products predicted by the phase diagram are TaC and TaSi$\\sb2$. This final state is reached upon annealing at 1200$\\sp\\circ$C. On the nitrogen-implanted $\\beta$-SiC, the contact resistivity of the as-deposited Ta contact is the lowest and in the order of high $\\rm10\\sp{-7}\\ \\Omega cm\\sp2$ and degrades to $\\rm4.3 \imes 10\\sp{-6}\\ \\Omega cm\\sp2$ at 1000$\\sp\\circ$C. The as-deposited Re contact has the highest contact resistivity of $\\rm1 \imes 10\\sp{-4}\\ \\Omega cm\\sp2$ but it improves to $\\rm1 \imes 10\\sp{-5}\\ \\Omega cm\\sp2$ upon annealing at 900$\\sp\\circ$C. The contact resistivity of the as-deposited and 500$\\sp\\circ$C-annealed Pt contacts is about $10\\sp{-6}$-$\\rm10\\sp{-5}\\ \\Omega cm\\sp2$. After annealing at 900$\\sp\\circ$C, the Pt contact is no more ohmic.

English

ISBN: 9798209386728Subjects--Topical Terms:

543314
Materials science.

Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations /
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100 1 $a Chen, Jen-Sue, $e author. $3 3824790
245 1 0 $a Ohmic contacts to beta silicon carbide: Electrical and metallurgical characterizations / $c Jen-Sue Chen.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 1995
300 $a 1 electronic resource (106 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 56-09, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisors: Nicolet, Marc-A.
502 $b Ph.D. $c California Institute of Technology $d 1995.
520 $a Thermally induced reactions between a sputter-deposited Re, Pt or Ta film and a single crystalline (001) $\\beta$-SiC substrate in vacuum at temperatures from 300 to 1200$\\sp\\circ$C for 30 min or 1 h are investigated by backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, transmission and scanning electron microscopies. The contact resistivities of the as-deposited and annealed Pt, Re, and Ta films to n-type $\\beta$-SiC are characterized using circular contact patterns with transmission line model. Re does not react with SiC up to 1100$\\sp\\circ$C. This finding also coincides with our calculations of the free energy of reactions from critically assessed thermodynamic data for rhenium silicides and SiC. A thin amorphous interlayer forms between Pt and SiC upon annealing at 400$\\sp\\circ$C. Samples annealed at 500-900$\\sp\\circ$C have a double-layer structure with a silicide surface layer and a carbon-silicide mixed layer below. The main product phase is Pt$\\sb3$Si at 500$\\sp\\circ$C, and at is Pt$\\sb2$Si 600-900$\\sp\\circ$C. Both Pt$\\sb2$Si and PtSi are detected upon annealing at 1000$\\sp\\circ$C with the formation of dendrite-like hillocks. Ta reacts with SiC upon annealing at 900$\\sp\\circ$C. At 1000$\\sp\\circ$C, the reaction zone possesses a multilayered structure of $\\beta$-SiC/TaC/carbon-stabilized $\\rm Ta\\sb5Si\\sb3/\\alpha$-$\\rm Ta\\sb5Si\\sb3/Ta\\sb2$C. The equilibrium products predicted by the phase diagram are TaC and TaSi$\\sb2$. This final state is reached upon annealing at 1200$\\sp\\circ$C. On the nitrogen-implanted $\\beta$-SiC, the contact resistivity of the as-deposited Ta contact is the lowest and in the order of high $\\rm10\\sp{-7}\\ \\Omega cm\\sp2$ and degrades to $\\rm4.3 \imes 10\\sp{-6}\\ \\Omega cm\\sp2$ at 1000$\\sp\\circ$C. The as-deposited Re contact has the highest contact resistivity of $\\rm1 \imes 10\\sp{-4}\\ \\Omega cm\\sp2$ but it improves to $\\rm1 \imes 10\\sp{-5}\\ \\Omega cm\\sp2$ upon annealing at 900$\\sp\\circ$C. The contact resistivity of the as-deposited and 500$\\sp\\circ$C-annealed Pt contacts is about $10\\sp{-6}$-$\\rm10\\sp{-5}\\ \\Omega cm\\sp2$. After annealing at 900$\\sp\\circ$C, the Pt contact is no more ohmic.
546 $a English
590 $a School code: 0037
650 4 $a Materials science. $3 543314
650 4 $a Electrical engineering. $3 649834
650 4 $a Metallurgy. $3 535414
690 $a 0794
690 $a 0544
710 2 $a California Institute of Technology. $e degree granting institution. $3 3824791
720 1 $a Nicolet, Marc-A. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 56-09B.
790 $a 0037
791 $a Ph.D.
792 $a 1995
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9509969