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Optical Properties of Hexagonal Boro...

Tauro, Sancia,

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Optical Properties of Hexagonal Boron Nitride Defects /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Optical Properties of Hexagonal Boron Nitride Defects // Sancia Tauro.
作者:	Tauro, Sancia,
面頁冊數:	1 electronic resource (49 pages)
附註:	Source: Masters Abstracts International, Volume: 85-11.
Contained By:	Masters Abstracts International85-11.
標題:	Physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31300022
ISBN:	9798382733500

Optical Properties of Hexagonal Boron Nitride Defects /
Tauro, Sancia,

Optical Properties of Hexagonal Boron Nitride Defects /Sancia Tauro. - 1 electronic resource (49 pages)

Source: Masters Abstracts International, Volume: 85-11.

Hexagonal Boron Nitride (hBN) is an atomically-thin two-dimensional (2D) material formed from boron and nitrogen atoms arranged alternatively in a hexagonal planar structure similar to graphene. The lack of inversion symmetry in hBN because of the two B and N triangular sublattices results in the properties different from those of graphene including with a large energy bandgap of ≈ 6 eV. Such a large bandgap limits hBN's potential in opto-electronic and photonic devices. Alternatively, creating defects in the hBN crystal structure can induce mid-level energy states within the large energy bandgap, thus tuning the electrical, optical, mechanical, and thermal properties. Similarly, the isotopic composition may also affect the optical properties, akin to a defect. Defects may also arise during the growth or under specific processing conditions, facilitated through various methods. This thesis is focused on studying the optical properties of defects in hBN using Raman and photoluminescence spectroscopic tools. Here we show that isotopic mass defect is the reason for the different phonon mode frequencies as observed via Raman Spectroscopy. A systematic study is conducted to control the thermal annealing-based defects creation as observed via the photoluminescence spectroscopy. We believe that this study establishes the path for controlled defect engineering in hBN crystals for quantum light emission, a phenomenon with applications in quantum information science and technology.

English

ISBN: 9798382733500Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Nitrogen atoms

Optical Properties of Hexagonal Boron Nitride Defects /
LDR:02935nmm a22004453i 4500 001 2434684
005 20250923060940.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798382733500
035 $a (MiAaPQD)AAI31300022
035 $a AAI31300022
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Tauro, Sancia, $e author. $3 3824748
245 1 0 $a Optical Properties of Hexagonal Boron Nitride Defects / $c Sancia Tauro.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (49 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 85-11.
500 $a Advisors: Kumar Behura, Sanjay Committee members: Torikachvili, Milton; Youssef, George.
502 $b M.S. $c San Diego State University $d 2024.
520 $a Hexagonal Boron Nitride (hBN) is an atomically-thin two-dimensional (2D) material formed from boron and nitrogen atoms arranged alternatively in a hexagonal planar structure similar to graphene. The lack of inversion symmetry in hBN because of the two B and N triangular sublattices results in the properties different from those of graphene including with a large energy bandgap of ≈ 6 eV. Such a large bandgap limits hBN's potential in opto-electronic and photonic devices. Alternatively, creating defects in the hBN crystal structure can induce mid-level energy states within the large energy bandgap, thus tuning the electrical, optical, mechanical, and thermal properties. Similarly, the isotopic composition may also affect the optical properties, akin to a defect. Defects may also arise during the growth or under specific processing conditions, facilitated through various methods. This thesis is focused on studying the optical properties of defects in hBN using Raman and photoluminescence spectroscopic tools. Here we show that isotopic mass defect is the reason for the different phonon mode frequencies as observed via Raman Spectroscopy. A systematic study is conducted to control the thermal annealing-based defects creation as observed via the photoluminescence spectroscopy. We believe that this study establishes the path for controlled defect engineering in hBN crystals for quantum light emission, a phenomenon with applications in quantum information science and technology.
546 $a English
590 $a School code: 0220
650 4 $a Physics. $3 516296
650 4 $a Applied physics. $3 3343996
650 4 $a Physical chemistry. $3 1981412
650 4 $a Optics. $3 517925
653 $a Nitrogen atoms
653 $a Hexagonal Boron Nitride
653 $a Photonic devices
653 $a Optical properties
653 $a Photoluminescence spectroscopy
690 $a 0605
690 $a 0752
690 $a 0215
690 $a 0494
710 2 $a San Diego State University. $b Physics. $e degree granting institution. $3 3822663
720 1 $a Kumar Behura, Sanjay $e degree supervisor.
773 0 $t Masters Abstracts International $g 85-11.
790 $a 0220
791 $a M.S.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31300022