東華大學圖書館 |

Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications // Yanpeng Liu.
作者:	Liu, Yanpeng,
面頁冊數:	1 electronic resource (214 pages)
附註:	Source: Dissertations Abstracts International, Volume: 80-02, Section: C.
Contained By:	Dissertations Abstracts International80-02C.
標題:	Organic chemistry. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10907459
ISBN:	9781083644138

Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications /
Liu, Yanpeng,

Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications /Yanpeng Liu. - 1 electronic resource (214 pages)

Source: Dissertations Abstracts International, Volume: 80-02, Section: C.

Since its first discovery in 2004, graphene made of sp2 carbon atoms and arranged in hexagonal lattice structure, as a representative of 2D materials families, has attracted intense attention of researchers from various fields due to its unique properties and performances in electronics, optoelectronics, biological engineering, light processing, photovoltaic, sensors and energy storages. To produce graphene thin films, several methods, such as mechanical exfoliation, chemical reduction of graphene oxide (rGO) and chemical vapor deposition (CVD), have been exploited. Among them, mechanical exfoliation from nature graphite by scotch tape offers clean and nearly perfect graphene flakes but suffers from low throughput and tiny size (usually less than 1mm), limiting its industrially scalable applications. rGO mainly using hydrazine hydrate to reduce oxidation groups induced from solution-based exfoliation process could be produced massively but is extremely limited by its demerits, like poor size and layer distributions and poor quality. Therefore, graphene from CVD growth attract most attention to become the next silicon and ITO alternative due to its precise layer controlling and neatly uniformity over large area. Hence CVD is the most promising graphene production method for solar cells, touch panels, molecular electronics and other flexible electronics applications. Beyond graphene, the CVD method is also an effective way to grow other 2D materials, like thick graphitic films, MoS2, WS2, WSe2 and etc. However, there are some unexploited aspects of CVD graphene and several obstacles in its applications. First, in order to improve the conductivity of CVD graphene films, one effective way is to stack CVD graphene in a layer by layer (LBL) fashion to form multilayer. Although the overall conductivity (in-plane or out-of-plane) improves with layer thickness, it scales poorly with thickness due to the weak coupling between the layers. These problems will be amplified in large area electronic devices where series resistance scales with lateral dimension. Most of the research efforts on graphene have thus far focused on improving the in-plane lateral conductivity, there is scant attention on the plane-to-plane (vertical) conductivity, which is important in electrode applications. To address the issue, probing the quality of interfaces in stacked CVD graphene films and its correlated electronic properties are studies in chapter 3. Secondly, due to its atomic thickness and large area, graphene has to be supported on optically transparent substrates like quartz, glass and poly(ethyleneterephthalate) (PET). Charged impurity centers and optical phonon scattering due to the polar substrate reduces the intrinsic mobility of the carriers, which certainly reduces the in plane conductivity of CVD graphene films. A facile way to minimize the negative effect from the underlying substrate by supporting LBL graphene films is highly demanded. Third, transition metal dichalcogenides (TMDs, like WSe2) show unique electronic and optical properties. However, one major obstacle limiting their wide applications as a semiconductor is that the measured mobility of WSe2 flakes is usually very low owing to built-up Schottky barrier between WSe2 and metal electrode. Many research groups attempted to minimize the barrier height by choosing matched metal contact, but seldom achieved satisfying electrical performances. Whether graphene film could be adopted as interlayer to improve the contact resistance and FET performance need careful discussion. Lastly, the growth of 2D materials via CVD process always needs a compatible substrate or catalyst. Due to different thermal expansion coefficients, CVD 2D films are always internally stressed. For 2D thin films on rigid substrates, buckling-delamination may spontaneously occur as a result of intrinsic stress, which may influence the properties of 2D materials. This can not happen to graphene film owing to low film stiffness. Usually, these delaminated blister patterns are confined to be circular, straight-sided, telephone cord and network-like shape. At this point, we systematically study new properties induced by delaminated patterns to graphitic thin film via CVD growth. In summary, several electronic bottleneck issues about CVD graphene were discussed and effective solutions were developed to benefit applications of CVD graphene films. Lastly, a more detailed discussion of CVD nanocrystalline graphitic films with buckling delamination is also presented to guide us to understand the strength and drawback of graphene films in-depth.

English

ISBN: 9781083644138Subjects--Topical Terms:

523952
Organic chemistry.
Subjects--Index Terms:

Graphene

Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications /
LDR:06095nmm a22004213i 4500 001 2434627
005 20250923060932.5
006 m o d
007 cr|nu||||||||
008 261011s2015 miu||||||m |||||||eng d
020 $a 9781083644138
035 $a (MiAaPQD)AAI10907459
035 $a (MiAaPQD)USingapore122576
035 $a AAI10907459
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Liu, Yanpeng, $e author. $3 3824666
245 1 0 $a Layer by Layer Stacking of Two Dimensional Carbon Materials and Their Applications / $c Yanpeng Liu.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2015
300 $a 1 electronic resource (214 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 80-02, Section: C.
500 $a Publisher info.: Dissertation/Thesis.
500 $a Advisors: KIAN PING, LOH; VENKATESAN, THIRUMALAI VENKY.
502 $b Ph.D. $c National University of Singapore (Singapore) $d 2015.
520 $a Since its first discovery in 2004, graphene made of sp2 carbon atoms and arranged in hexagonal lattice structure, as a representative of 2D materials families, has attracted intense attention of researchers from various fields due to its unique properties and performances in electronics, optoelectronics, biological engineering, light processing, photovoltaic, sensors and energy storages. To produce graphene thin films, several methods, such as mechanical exfoliation, chemical reduction of graphene oxide (rGO) and chemical vapor deposition (CVD), have been exploited. Among them, mechanical exfoliation from nature graphite by scotch tape offers clean and nearly perfect graphene flakes but suffers from low throughput and tiny size (usually less than 1mm), limiting its industrially scalable applications. rGO mainly using hydrazine hydrate to reduce oxidation groups induced from solution-based exfoliation process could be produced massively but is extremely limited by its demerits, like poor size and layer distributions and poor quality. Therefore, graphene from CVD growth attract most attention to become the next silicon and ITO alternative due to its precise layer controlling and neatly uniformity over large area. Hence CVD is the most promising graphene production method for solar cells, touch panels, molecular electronics and other flexible electronics applications. Beyond graphene, the CVD method is also an effective way to grow other 2D materials, like thick graphitic films, MoS2, WS2, WSe2 and etc. However, there are some unexploited aspects of CVD graphene and several obstacles in its applications. First, in order to improve the conductivity of CVD graphene films, one effective way is to stack CVD graphene in a layer by layer (LBL) fashion to form multilayer. Although the overall conductivity (in-plane or out-of-plane) improves with layer thickness, it scales poorly with thickness due to the weak coupling between the layers. These problems will be amplified in large area electronic devices where series resistance scales with lateral dimension. Most of the research efforts on graphene have thus far focused on improving the in-plane lateral conductivity, there is scant attention on the plane-to-plane (vertical) conductivity, which is important in electrode applications. To address the issue, probing the quality of interfaces in stacked CVD graphene films and its correlated electronic properties are studies in chapter 3. Secondly, due to its atomic thickness and large area, graphene has to be supported on optically transparent substrates like quartz, glass and poly(ethyleneterephthalate) (PET). Charged impurity centers and optical phonon scattering due to the polar substrate reduces the intrinsic mobility of the carriers, which certainly reduces the in plane conductivity of CVD graphene films. A facile way to minimize the negative effect from the underlying substrate by supporting LBL graphene films is highly demanded. Third, transition metal dichalcogenides (TMDs, like WSe2) show unique electronic and optical properties. However, one major obstacle limiting their wide applications as a semiconductor is that the measured mobility of WSe2 flakes is usually very low owing to built-up Schottky barrier between WSe2 and metal electrode. Many research groups attempted to minimize the barrier height by choosing matched metal contact, but seldom achieved satisfying electrical performances. Whether graphene film could be adopted as interlayer to improve the contact resistance and FET performance need careful discussion. Lastly, the growth of 2D materials via CVD process always needs a compatible substrate or catalyst. Due to different thermal expansion coefficients, CVD 2D films are always internally stressed. For 2D thin films on rigid substrates, buckling-delamination may spontaneously occur as a result of intrinsic stress, which may influence the properties of 2D materials. This can not happen to graphene film owing to low film stiffness. Usually, these delaminated blister patterns are confined to be circular, straight-sided, telephone cord and network-like shape. At this point, we systematically study new properties induced by delaminated patterns to graphitic thin film via CVD growth. In summary, several electronic bottleneck issues about CVD graphene were discussed and effective solutions were developed to benefit applications of CVD graphene films. Lastly, a more detailed discussion of CVD nanocrystalline graphitic films with buckling delamination is also presented to guide us to understand the strength and drawback of graphene films in-depth.
546 $a English
590 $a School code: 1883
650 4 $a Organic chemistry. $3 523952
650 4 $a Physical chemistry. $3 1981412
650 4 $a Nanotechnology. $3 526235
653 $a Graphene
690 $a 0490
690 $a 0494
690 $a 0652
710 2 $a National University of Singapore (Singapore). $e degree granting institution. $3 3765631
720 1 $a KIAN PING, LOH $e degree supervisor.
720 1 $a VENKATESAN, THIRUMALAI VENKY $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 80-02C.
790 $a 1883
791 $a Ph.D.
792 $a 2015
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=10907459