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Gan-Based Robust Low-Noise Amplifier...

Kazan, Oguz,

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Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Gan-Based Robust Low-Noise Amplifier =/ Oguz Kazan.
Reminder of title:	Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
Author:	Kazan, Oguz,
Description:	1 electronic resource (111 pages)
Notes:	Source: Masters Abstracts International, Volume: 86-05.
Contained By:	Masters Abstracts International86-05.
Subject:	Load. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31678427
ISBN:	9798346370635

Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
Kazan, Oguz,

Gan-Based Robust Low-Noise Amplifier =Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /Oguz Kazan. - 1 electronic resource (111 pages)

Source: Masters Abstracts International, Volume: 86-05.

This thesis presents the theory, design and evaluation of low-noise amplifiers (LNAs) with high input power immunity, built on GaN/SiC substrate. Two separate X-band (8-12 GHz) LNAs are designed and sent out for production. After the manufactured samples are received, they are measured and evaluated. Measurement results show that both LNAs have a gain of more than 20 dB. One LNA achieves a noise figure of less than 2 dB, while the second one has a noise figure of less than 2.5 dB. Using three-stage topology, high linearity is achieved with an OIP3 of 29 dBm at 0.6 W power dissipation for one of the LNAs, and an OIP3 of 28.3 dBm is achieved at 0.36 W power dissipation for the other LNA. The robustness tests show that the circuits survive 2.5 W (34 dBm) input power. This survivability performance enables the use of presented LNAs in electronic warfare systems without a need of a diode limiter. With a size of just 2.8 x 1.3 mm2 (3.6 mm2) the presented LNAs are compact when compared to the state of the art. The circuits are realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.

English

ISBN: 9798346370635Subjects--Topical Terms:

3562902
Load.

Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
LDR:02406nmm a22003973i 4500 001 2434104
005 20250905091344.5
006 m o d
007 cr|nu||||||||
008 261011s2018 miu||||||m |||||||eng d
020 $a 9798346370635
035 $a (MiAaPQD)AAI31678427
035 $a (MiAaPQD)MiddleEastTech27388
035 $a AAI31678427
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Kazan, Oguz, $e author. $3 3823971
245 1 0 $a Gan-Based Robust Low-Noise Amplifier = $b Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec / $c Oguz Kazan.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2018
300 $a 1 electronic resource (111 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 86-05.
500 $a Advisors: Civi, Hatice Ozlem Aydin.
502 $b M.S. $c Middle East Technical University (Turkey) $d 2018.
520 $a This thesis presents the theory, design and evaluation of low-noise amplifiers (LNAs) with high input power immunity, built on GaN/SiC substrate. Two separate X-band (8-12 GHz) LNAs are designed and sent out for production. After the manufactured samples are received, they are measured and evaluated. Measurement results show that both LNAs have a gain of more than 20 dB. One LNA achieves a noise figure of less than 2 dB, while the second one has a noise figure of less than 2.5 dB. Using three-stage topology, high linearity is achieved with an OIP3 of 29 dBm at 0.6 W power dissipation for one of the LNAs, and an OIP3 of 28.3 dBm is achieved at 0.36 W power dissipation for the other LNA. The robustness tests show that the circuits survive 2.5 W (34 dBm) input power. This survivability performance enables the use of presented LNAs in electronic warfare systems without a need of a diode limiter. With a size of just 2.8 x 1.3 mm2 (3.6 mm2) the presented LNAs are compact when compared to the state of the art. The circuits are realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
546 $a English
590 $a School code: 2013
650 4 $a Load. $3 3562902
650 4 $a Receivers & amplifiers. $3 3559205
650 4 $a Bandwidths. $3 3560998
650 4 $a Gallium arsenide. $3 3681863
650 4 $a Antennas. $3 3681648
650 4 $a Circuits. $3 3555093
650 4 $a Communications networks. $3 3564745
650 4 $a Design. $3 518875
650 4 $a Electronic warfare. $3 3682723
650 4 $a Spectrum allocation. $3 3562481
650 4 $a Transistors. $3 713271
650 4 $a Electrical engineering. $3 649834
650 4 $a Electromagnetics. $3 3173223
650 4 $a Optics. $3 517925
690 $a 0389
690 $a 0544
690 $a 0607
690 $a 0752
710 2 $a Middle East Technical University (Turkey). $b Department of Electrical and Electronics Engineering. $e degree granting institution. $3 3815419
720 1 $a Civi, Hatice Ozlem Aydin $e degree supervisor.
773 0 $t Masters Abstracts International $g 86-05.
790 $a 2013
791 $a M.S.
792 $a 2018
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31678427