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Design, Analysis, and Performance of a Silicon Photonic Traveling Wave Mach-Zehnder Modulator /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Design, Analysis, and Performance of a Silicon Photonic Traveling Wave Mach-Zehnder Modulator // David Patel.
Author:	Patel, David,
Description:	1 electronic resource (142 pages)
Notes:	Source: Masters Abstracts International, Volume: 82-10.
Contained By:	Masters Abstracts International82-10.
Subject:	Silicon. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28253658
ISBN:	9798597026213

Design, Analysis, and Performance of a Silicon Photonic Traveling Wave Mach-Zehnder Modulator /
Patel, David,

Design, Analysis, and Performance of a Silicon Photonic Traveling Wave Mach-Zehnder Modulator /David Patel. - 1 electronic resource (142 pages)

Source: Masters Abstracts International, Volume: 82-10.

Silicon photonics is a technology platform for integrating passive and active optical devices. The ability to use existing CMOS-VLSI foundry processes to fabricate integrated optics enables large volume production at low costs while maintaining compatibility with electronic integrated circuits. With the recent explosion in network traffic, large datacenters are demanding higher and higher intra-datacenter transmission speeds over distances of up to 20 km. For this application, optical interconnects are more energy efficient and are able to satisfy t he bandwidth demands of the foreseeable future. Optical modulators are an essential component of these communication links and immense research is dedicated to developing efficient high bitrate devices. It is desirable to have high bitrate transmission over a single channel because it simplifies multiplexing ( e.g., fewer wavelengths and parallel fibers) which can increase costs. The work presented in this thesis uses the silicon photonic platform to realize an integrated Mach-Zehnder modulator (MZM) suitable for datacenter communication links.A series push-pull traveling wave MZM is designed using T-shaped extensions to increase the microwave index. The modulator is designed to have a characteristic impedance close to 50 0 for matching with common microwave drivers and terminations. In addition, the group velocities of the microwave and optical wave are closely matched to optimize the electro-optic bandwidth. A 37 GHz -3-dB electro-optic bandwidth was measured at 1 V reverse bias. The DC Vπ was measured to be 7 V in the most efficient arm, corresponding to a VπLπ of 2.8 V-cm. For on-off keying modulation, open eye diagrams are visible up to 60 Gbps. Error-free operation with a bit error rate (BER) < 1 x 10-12 was measured up to 45 Gbps, the limit of our photo-receiver. Eye diagrams with a clear opening were observed up to 70 Gbps using analog signal processing to compensate for the limitation of our bit pattern generator. The deviee was further characterized using digital-signal-processing to dispense the analog bandwidth limitations of the entire communication link to the digital domain. Using PAM-4 and PAM-8 modulation formats, 112 Gbps transmission on 2 km (5 km with PAM-8) of SMF fiber is achieved below the pre-forward-error-correction (FEC) BER threshold of 3.8 x 10-3 , corresponding to a post-FEC BER of < 1x10-15 . The best case energy consumed by the modulator is estimated to be 0.18 pJ /bit . The ability to generate 100 Gbps modulation in a single wavelength, as achieved in this work, is one of the main waypoints in realizing 400 Gbps and 1 Tbps short reach interconnects.

English

ISBN: 9798597026213Subjects--Topical Terms:

669429
Silicon.
Subjects--Index Terms:

Silicon photonics

Design, Analysis, and Performance of a Silicon Photonic Traveling Wave Mach-Zehnder Modulator /
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520 $a Silicon photonics is a technology platform for integrating passive and active optical devices. The ability to use existing CMOS-VLSI foundry processes to fabricate integrated optics enables large volume production at low costs while maintaining compatibility with electronic integrated circuits. With the recent explosion in network traffic, large datacenters are demanding higher and higher intra-datacenter transmission speeds over distances of up to 20 km. For this application, optical interconnects are more energy efficient and are able to satisfy t he bandwidth demands of the foreseeable future. Optical modulators are an essential component of these communication links and immense research is dedicated to developing efficient high bitrate devices. It is desirable to have high bitrate transmission over a single channel because it simplifies multiplexing ( e.g., fewer wavelengths and parallel fibers) which can increase costs. The work presented in this thesis uses the silicon photonic platform to realize an integrated Mach-Zehnder modulator (MZM) suitable for datacenter communication links.A series push-pull traveling wave MZM is designed using T-shaped extensions to increase the microwave index. The modulator is designed to have a characteristic impedance close to 50 0 for matching with common microwave drivers and terminations. In addition, the group velocities of the microwave and optical wave are closely matched to optimize the electro-optic bandwidth. A 37 GHz -3-dB electro-optic bandwidth was measured at 1 V reverse bias. The DC Vπ was measured to be 7 V in the most efficient arm, corresponding to a VπLπ of 2.8 V-cm. For on-off keying modulation, open eye diagrams are visible up to 60 Gbps. Error-free operation with a bit error rate (BER) < 1 x 10-12 was measured up to 45 Gbps, the limit of our photo-receiver. Eye diagrams with a clear opening were observed up to 70 Gbps using analog signal processing to compensate for the limitation of our bit pattern generator. The deviee was further characterized using digital-signal-processing to dispense the analog bandwidth limitations of the entire communication link to the digital domain. Using PAM-4 and PAM-8 modulation formats, 112 Gbps transmission on 2 km (5 km with PAM-8) of SMF fiber is achieved below the pre-forward-error-correction (FEC) BER threshold of 3.8 x 10-3 , corresponding to a post-FEC BER of < 1x10-15 . The best case energy consumed by the modulator is estimated to be 0.18 pJ /bit . The ability to generate 100 Gbps modulation in a single wavelength, as achieved in this work, is one of the main waypoints in realizing 400 Gbps and 1 Tbps short reach interconnects.
520 $a La photonique sur silicium est une plate-forme technologique pour les dispositifs optiques integres passifs et actifs. La possibilite d'utiliser les procedes de fonderie CMOS-VLSI existants pour la fabrication de composantes d'optique integree permet une production a grande echelle et a moindre cout tout en maintenant la compatibilite des composantes avec les circuits electroniques integres. Avec les recentes explosions du trafic dans les reseaux, les grands centres de donnees exigent une vitesse de transmission interne de plus en plus grande sur des distances allant jusqu'a 20 km. Pour cette application, les interconnexions optiques sont plus efficace energiquement et sont capables de satisfaire les demandes de bande passante a venir. Les modulateurs optiques sont des composantes essentielles de ces liens de communication et une grande partie de l'effort de recherche est dediee a developper des dispositifs efficaces a haut debit. Il est souhaitable d'avoir des debits de transmission eleves sur un seul canal car cela simplifie le multiplexage (i.e. moins de canaux et de fibres en parallele) qui pourrait augmenter les couts. Le travail de recherche presente dans cette these demontre l'utilisation de la photonique sur silicium pour realiser un modulateur Mach-Zehnder (MZM) adequat pour les liens de communication des centres de donnees.Un modulateur Mach-Zehnder a ondes progressives, en serie et en montage symetrique est concu avec une extension en forme de T pour augmenter l'indice des micro-ondes. Le modulateur est concu pour obtenir une impedance caracteristique de pres de 50 Ω pour s 'adapter aux impedances typiques de terminaisons et de pilotes a micro-ondes. De plus, les vitesses de groupe des ondes optiques et micro-ondes sont adaptes autant que possible afin d'optimiser la bande passante electro-optique. Une bande passante electro-optique de 37 GHz a -3 dB a ete mesuree avec une tension a polarisation inverse de 1 V. La tension de polarisation Vπ en courant continu mesuree etait de 7 V, correspondant a un facteur de merite V1rL1r de 2.8 V-cm. Pour la modulation par tout ou rien (OOK), des diagrammes de l'oeil ouverts sont visibles jusqu'a 60 Gbps. Un fonctionnement exempt d'erreur avec un taux d'erreur sur les bits (BER) de moins de 1 x 10-12 a ete mesure jusqu'a 45 Gbps, la limite de notre photorecepteur. Des diagrammes de l'oeil avec une ouverture distincte ont ete observes jusqu'a 70 Gbps en utilisant le traitement de signal analogue. Le dispositif a ete analyse plus amplement en utilisant le traitement de signal digital afin de ne pas etre limite par la bande passante analogue du lien de communication. En utilisant les formats de modulation PAM-4 et PAM-8, une transmission de 112 Gbps sur 2 km de fibre optique unimodale (SMF) a ete realisee sous le seuil de BER avec pre-correction d'erreur sans voie de retour (FEC) de 3,8 x 10-3 , correspondant a un post-FEC BER de moins de 1 x 10-15. La consommation d'energie du modulateur dans le meilleur des cas est estimee a 0,18 pJ / bit. La possibilite de produire une modulation a 100 Gbps avec une seule longueur d'onde, tel qu'accompli dans le travail presente, est une des etapes importantes dans la realisation d'interconnexion a courte portee a 400 Gbps et a 1 Tbps.
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650 4 $a Materials research. $3 3686999
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