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Materials Engineering of Silicide Th...

Li, Ruoshui,

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Materials Engineering of Silicide Thin Films for Advanced Superconducting Quantum Device Fabrication /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Materials Engineering of Silicide Thin Films for Advanced Superconducting Quantum Device Fabrication // Ruoshui Li.
Author:	Li, Ruoshui,
Description:	1 electronic resource (166 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-05, Section: B.
Contained By:	Dissertations Abstracts International86-05B.
Subject:	Chemistry. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31331217
ISBN:	9798342728966

Materials Engineering of Silicide Thin Films for Advanced Superconducting Quantum Device Fabrication /
Li, Ruoshui,

Materials Engineering of Silicide Thin Films for Advanced Superconducting Quantum Device Fabrication /Ruoshui Li. - 1 electronic resource (166 pages)

Source: Dissertations Abstracts International, Volume: 86-05, Section: B.

Quantum computing has emerged as a pivotal discipline this decade, leading a transformation in computing power with significant implications for many fields such as artificial intelligence, cryptography, and pharmaceutical research. Yet, despite the surge in research on quantum algorithms and circuit design, materials science - a cornerstone for developing advanced quantum computers - has lagged. This dissertation addresses the gap in materials research within quantum information science, aiming to set a foundation for efficient and scalable quantum computing. In the initial segments, we introduce a novel materials discovery method- ology, utilizing the zinc titanate ternary system as a model. This approach integrates high-throughput materials synthesis and characterization with AI-assisted multi-modal data analysis to efficiently identify materials possessing the requisite properties for quantum applications. Following this, we explore the impact of temperature and stoichiometry on the formation of CoSi2 thin films. Selected for its compatibility with existing semiconductor technologies and potential for epitaxial growth, CoSi2 is evaluated as a promising superconductor for quantum devices.Building upon the optimized CoSi2 thin film growth conditions, the study progresses to examine the electrical transport in constriction type Joseph- son junctions and SQUID devices fabricated from CoSi2. These components are the critical building blocks for superconducting qubits in quantum computing architectures. Furthermore, we demonstrate a comprehensive fabrication process for a coplanar SQUID device based on PtSi, employing a SiO2 hard mask for pattern transfer. This method represents a simplified, efficient pathway to quantum device fabrication.This dissertation represents a multidisciplinary effort to bridge the gap between materials science and the advances in quantum information science, underscoring the need for targeted research in materials discovery and device fabrication techniques. Through this work, we aim to accelerate the development of new materials that drive quantum computing towards realization of the quantum future.

English

ISBN: 9798342728966Subjects--Topical Terms:

516420
Chemistry.
Subjects--Index Terms:

Quantum devices

Materials Engineering of Silicide Thin Films for Advanced Superconducting Quantum Device Fabrication /
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500 $a Advisors: Liu, Mingzhao; White, Michael G. Committee members: Marschilok, Amy C.; Tong, Xiao.
502 $b Ph.D. $c State University of New York at Stony Brook $d 2024.
520 $a Quantum computing has emerged as a pivotal discipline this decade, leading a transformation in computing power with significant implications for many fields such as artificial intelligence, cryptography, and pharmaceutical research. Yet, despite the surge in research on quantum algorithms and circuit design, materials science - a cornerstone for developing advanced quantum computers - has lagged. This dissertation addresses the gap in materials research within quantum information science, aiming to set a foundation for efficient and scalable quantum computing. In the initial segments, we introduce a novel materials discovery method- ology, utilizing the zinc titanate ternary system as a model. This approach integrates high-throughput materials synthesis and characterization with AI-assisted multi-modal data analysis to efficiently identify materials possessing the requisite properties for quantum applications. Following this, we explore the impact of temperature and stoichiometry on the formation of CoSi2 thin films. Selected for its compatibility with existing semiconductor technologies and potential for epitaxial growth, CoSi2 is evaluated as a promising superconductor for quantum devices.Building upon the optimized CoSi2 thin film growth conditions, the study progresses to examine the electrical transport in constriction type Joseph- son junctions and SQUID devices fabricated from CoSi2. These components are the critical building blocks for superconducting qubits in quantum computing architectures. Furthermore, we demonstrate a comprehensive fabrication process for a coplanar SQUID device based on PtSi, employing a SiO2 hard mask for pattern transfer. This method represents a simplified, efficient pathway to quantum device fabrication.This dissertation represents a multidisciplinary effort to bridge the gap between materials science and the advances in quantum information science, underscoring the need for targeted research in materials discovery and device fabrication techniques. Through this work, we aim to accelerate the development of new materials that drive quantum computing towards realization of the quantum future.
546 $a English
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650 4 $a Materials science. $3 543314
650 4 $a Quantum physics. $3 726746
653 $a Quantum devices
653 $a Superconductor
653 $a Thin films
690 $a 0485
690 $a 0599
690 $a 0794
710 2 $a State University of New York at Stony Brook. $b Chemistry. $e degree granting institution. $3 3823692
720 1 $a Liu, Mingzhao $e degree supervisor.
720 1 $a White, Michael G. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-05B.
790 $a 0771
791 $a Ph.D.
792 $a 2024
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