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Gallium Nitride-Based Moire Photonic...

Raun, Alexander,

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Gallium Nitride-Based Moire Photonic Crystals for Applications in Microcavity Lasing /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Gallium Nitride-Based Moire Photonic Crystals for Applications in Microcavity Lasing // Alexander Raun.
Author:	Raun, Alexander,
Description:	1 electronic resource (152 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-08, Section: B.
Contained By:	Dissertations Abstracts International86-08B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31769878
ISBN:	9798304965163

Gallium Nitride-Based Moire Photonic Crystals for Applications in Microcavity Lasing /
Raun, Alexander,

Gallium Nitride-Based Moire Photonic Crystals for Applications in Microcavity Lasing /Alexander Raun. - 1 electronic resource (152 pages)

Source: Dissertations Abstracts International, Volume: 86-08, Section: B.

Gallium Nitride (GaN) microcavity lasers are powerful devices with applications in lighting, optical communication, and sensing. In conventional microcavities, GaN-based emitters in the visible wavelength range have been shown to exhibit ultralow thresholds lasing despite containing significant levels of growth-related defects. In unconventional microcavities, GaN's highly efficient light emission presents an opportunity to demonstrate novel light localization mechanisms that can be utilized in lasing. Moire photonic crystals are unconventional microcavities that slow and localize light propagation via coupling between two stacked, twisted photonic crystal layers. The two layers in the stack provide design degrees of freedom that can enable active tunability of the cavity. This work probes the feasibility of moire photonic crystal lasers with GaN-based emitting materials. Lasing is demonstrated in a single layer, merged moire photonic crystal at wavelengths of 450 and 451nm with a threshold of 30μJ/cm2. A fabrication protocol is developed to realize true bilayer GaN photonic crystal systems, paving a way for active tunability. Finally, to be realized in a compact piece of technology, GaN-based microcavities must be able to be controlled electrically. The last chapter of this work explores electrical control of microdisk cavities in GaN, developing a fabrication protocol and identifying key design challenges in electrical injection.

English

ISBN: 9798304965163Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Gallium Nitride

Gallium Nitride-Based Moire Photonic Crystals for Applications in Microcavity Lasing /
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300 $a 1 electronic resource (152 pages)
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500 $a Advisors: Hu, Evelyn Committee members: Capasso, Federico; Ham, Donhee.
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520 $a Gallium Nitride (GaN) microcavity lasers are powerful devices with applications in lighting, optical communication, and sensing. In conventional microcavities, GaN-based emitters in the visible wavelength range have been shown to exhibit ultralow thresholds lasing despite containing significant levels of growth-related defects. In unconventional microcavities, GaN's highly efficient light emission presents an opportunity to demonstrate novel light localization mechanisms that can be utilized in lasing. Moire photonic crystals are unconventional microcavities that slow and localize light propagation via coupling between two stacked, twisted photonic crystal layers. The two layers in the stack provide design degrees of freedom that can enable active tunability of the cavity. This work probes the feasibility of moire photonic crystal lasers with GaN-based emitting materials. Lasing is demonstrated in a single layer, merged moire photonic crystal at wavelengths of 450 and 451nm with a threshold of 30μJ/cm2. A fabrication protocol is developed to realize true bilayer GaN photonic crystal systems, paving a way for active tunability. Finally, to be realized in a compact piece of technology, GaN-based microcavities must be able to be controlled electrically. The last chapter of this work explores electrical control of microdisk cavities in GaN, developing a fabrication protocol and identifying key design challenges in electrical injection.
546 $a English
590 $a School code: 0084
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
650 4 $a Quantum physics. $3 726746
650 4 $a Optics. $3 517925
653 $a Gallium Nitride
653 $a Microcavities
653 $a Electrical injection
653 $a Photonic crystals
653 $a Fabrication protocol
690 $a 0544
690 $a 0794
690 $a 0752
690 $a 0599
710 2 $a Harvard University. $b Engineering and Applied Sciences - Engineering Sciences. $e degree granting institution. $3 3765774
720 1 $a Hu, Evelyn $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-08B.
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791 $a Ph.D.
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