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Exploring Multi-Valued Logic in Ultr...

Xu, Piaohan,

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Exploring Multi-Valued Logic in Ultra-Scaled Transistors Through Simulation /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Exploring Multi-Valued Logic in Ultra-Scaled Transistors Through Simulation // Piaohan Xu.
Author:	Xu, Piaohan,
Description:	1 electronic resource (151 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
Contained By:	Dissertations Abstracts International86-12B.
Subject:	Physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=32045681
ISBN:	9798280777019

Exploring Multi-Valued Logic in Ultra-Scaled Transistors Through Simulation /
Xu, Piaohan,

Exploring Multi-Valued Logic in Ultra-Scaled Transistors Through Simulation /Piaohan Xu. - 1 electronic resource (151 pages)

Source: Dissertations Abstracts International, Volume: 86-12, Section: B.

As transistors continue to shrink, quantum confinement effects significantly alter their behavior. Ultra-scaled transistors exhibit quantized subbands, enabling the possibility of multi-valued logic (MVL) based on discrete energy levels.While MVL has been demonstrated in earlier studies, those devices are often difficult to fabricate, incompatible with standard industry processes, or limited to cryogenic temperatures.Gate-all-around field-effect transistors (GAAFETs), the latest transistor architecture, now reach dimensions where quantum confinement is strong enough to yield thermally stable quantized states. To explore this, we employ a custom simulation tool that self-consistently solves the Schrödinger-Poisson equations in ultra-scaled transistors using a two-stage iterative process: Gauss-Seidel relaxation followed by secant method based convergence. The custom simulation tool offers full control over geometry, materials, and numerical methods, enabling the study of nonstandard transistor designs.A device concept was investigated to assess its potential for multi-valued logic (MVL) operation. Simulations reveal room-temperature-stable quantized states in the designed device and suggest that the energy separation between these states may be sufficient to enable MVL operation. This establishes a theoretical foundation for future studies.

English

ISBN: 9798280777019Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

GAAFETs

Exploring Multi-Valued Logic in Ultra-Scaled Transistors Through Simulation /
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500 $a Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
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520 $a As transistors continue to shrink, quantum confinement effects significantly alter their behavior. Ultra-scaled transistors exhibit quantized subbands, enabling the possibility of multi-valued logic (MVL) based on discrete energy levels.While MVL has been demonstrated in earlier studies, those devices are often difficult to fabricate, incompatible with standard industry processes, or limited to cryogenic temperatures.Gate-all-around field-effect transistors (GAAFETs), the latest transistor architecture, now reach dimensions where quantum confinement is strong enough to yield thermally stable quantized states. To explore this, we employ a custom simulation tool that self-consistently solves the Schrödinger-Poisson equations in ultra-scaled transistors using a two-stage iterative process: Gauss-Seidel relaxation followed by secant method based convergence. The custom simulation tool offers full control over geometry, materials, and numerical methods, enabling the study of nonstandard transistor designs.A device concept was investigated to assess its potential for multi-valued logic (MVL) operation. Simulations reveal room-temperature-stable quantized states in the designed device and suggest that the energy separation between these states may be sufficient to enable MVL operation. This establishes a theoretical foundation for future studies.
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