東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Understanding Solar Cell Performance...

Mahaffey, Mason Philip,

Linked to FindBook

Google Book

Amazon

博客來

Understanding Solar Cell Performance Using Light-Based Measurement Techniques /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Understanding Solar Cell Performance Using Light-Based Measurement Techniques // Mason Philip Mahaffey.
Author:	Mahaffey, Mason Philip,
Description:	1 electronic resource (210 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-11, Section: B.
Contained By:	Dissertations Abstracts International86-11B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31995875
ISBN:	9798314878071

Understanding Solar Cell Performance Using Light-Based Measurement Techniques /
Mahaffey, Mason Philip,

Understanding Solar Cell Performance Using Light-Based Measurement Techniques /Mason Philip Mahaffey. - 1 electronic resource (210 pages)

Source: Dissertations Abstracts International, Volume: 86-11, Section: B.

A measurement tool for assessing the injection-dependent photoluminescence (PL) intensity of semiconductors, called the Suns-External-Radiative-Efficiency (Suns-ERE) tool, was developed. This quasi-steady-state PL tool measures the ERE and minority carrier lifetime of a sample as a function of the steady-state light intensity. From this information, it is possible to calculate the implied voltage and doping concentration of semiconductor films. First, the use of the Suns-ERE tool is demonstrated through measurements of the ERE and implied voltage of a gallium arsenide heterostructure. There are less than 2 millivolts of difference between the value calculated by the Suns-ERE tool and that of a calibrated hyperspectral PL microscope.Then, the tool is used to measure both the minority carrier lifetime and the doping concentration of silicon (Si), Cadmium(Selenium)Telluride (Cd(Se)Te), and perovskite absorbers. The tool is able to measure Si doping concentration values within a factor of 2 of known reference techniques, the measured doping values of Cd(Se)Te films are in good agreement with capacitance-voltage-measured doping concentrations. Additional consideration is given to the measurement of doping on perovskite films. It is shown that perovskite PL instability leads to inaccuracies in the measured doping, and that sample encapsulation helps with film stability. Simulations are performed to confirm the impact of optoelectronic instabilities on measurements. With context from simulation, doping concentration measurements are shown on encapsulated and unencapsulated films. The results demonstrate that there is significant variation in doping between films, different locations on films, and between perovskite grown on different surfaces.Finally, the use of the tool is expanded to measure the implied voltage of metallized Si solar cells. The tool is not able to measure the expected implied voltage because the tool's illumination area is smaller than the cells' full area. The differences between measurements made with the Suns-ERE tool and a full-area PL tool are highlighted. The tool is shown to be useful in quantitatively tracking changes in implied voltage, and a second version of the tool produces more accurate implied voltage measurements using a larger laser area (which is still partial relative to the size of the Si sample).

English

ISBN: 9798314878071Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Doping concentrations

Understanding Solar Cell Performance Using Light-Based Measurement Techniques /
LDR:03892nmm a22004573i 4500 001 2431837
005 20250624130502.5
006 m o d
007 cr|nu||||||||
008 261011s2025 miu||||||m |||||||eng d
020 $a 9798314878071
035 $a (MiAaPQD)AAI31995875
035 $a AAI31995875
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Mahaffey, Mason Philip, $e author. $3 3820829
245 1 0 $a Understanding Solar Cell Performance Using Light-Based Measurement Techniques / $c Mason Philip Mahaffey.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2025
300 $a 1 electronic resource (210 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 86-11, Section: B.
500 $a Advisors: Holman, Zachary Committee members: Onno, Arthur; King, Richard; Rolston, Nicholas.
502 $b Ph.D. $c Arizona State University $d 2025.
520 $a A measurement tool for assessing the injection-dependent photoluminescence (PL) intensity of semiconductors, called the Suns-External-Radiative-Efficiency (Suns-ERE) tool, was developed. This quasi-steady-state PL tool measures the ERE and minority carrier lifetime of a sample as a function of the steady-state light intensity. From this information, it is possible to calculate the implied voltage and doping concentration of semiconductor films. First, the use of the Suns-ERE tool is demonstrated through measurements of the ERE and implied voltage of a gallium arsenide heterostructure. There are less than 2 millivolts of difference between the value calculated by the Suns-ERE tool and that of a calibrated hyperspectral PL microscope.Then, the tool is used to measure both the minority carrier lifetime and the doping concentration of silicon (Si), Cadmium(Selenium)Telluride (Cd(Se)Te), and perovskite absorbers. The tool is able to measure Si doping concentration values within a factor of 2 of known reference techniques, the measured doping values of Cd(Se)Te films are in good agreement with capacitance-voltage-measured doping concentrations. Additional consideration is given to the measurement of doping on perovskite films. It is shown that perovskite PL instability leads to inaccuracies in the measured doping, and that sample encapsulation helps with film stability. Simulations are performed to confirm the impact of optoelectronic instabilities on measurements. With context from simulation, doping concentration measurements are shown on encapsulated and unencapsulated films. The results demonstrate that there is significant variation in doping between films, different locations on films, and between perovskite grown on different surfaces.Finally, the use of the tool is expanded to measure the implied voltage of metallized Si solar cells. The tool is not able to measure the expected implied voltage because the tool's illumination area is smaller than the cells' full area. The differences between measurements made with the Suns-ERE tool and a full-area PL tool are highlighted. The tool is shown to be useful in quantitatively tracking changes in implied voltage, and a second version of the tool produces more accurate implied voltage measurements using a larger laser area (which is still partial relative to the size of the Si sample).
546 $a English
590 $a School code: 0010
650 4 $a Electrical engineering. $3 649834
650 4 $a Applied physics. $3 3343996
650 4 $a Materials science. $3 543314
650 4 $a Alternative energy. $3 3436775
653 $a Doping concentrations
653 $a External radiative efficiency
653 $a Perovskite
653 $a Photoluminescence
653 $a Solar cell measurements
653 $a Solar cells
690 $a 0544
690 $a 0215
690 $a 0794
690 $a 0363
710 2 $a Arizona State University. $b Electrical Engineering. $e degree granting institution. $3 3771820
720 1 $a Holman, Zachary $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-11B.
790 $a 0010
791 $a Ph.D.
792 $a 2025
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31995875