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Electrical, Photoconductive, and The...

Woo, Kelly Yi-Li,

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Electrical, Photoconductive, and Thermal Studies of Diamond, an Ultrawide-Bandgap Semiconductor for Power Electronics /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electrical, Photoconductive, and Thermal Studies of Diamond, an Ultrawide-Bandgap Semiconductor for Power Electronics // Kelly Yi-Li Woo.
Author:	Woo, Kelly Yi-Li,
Description:	1 electronic resource (155 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-05, Section: B.
Contained By:	Dissertations Abstracts International86-05B.
Subject:	Etching. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31652056
ISBN:	9798346391142

Electrical, Photoconductive, and Thermal Studies of Diamond, an Ultrawide-Bandgap Semiconductor for Power Electronics /
Woo, Kelly Yi-Li,

Electrical, Photoconductive, and Thermal Studies of Diamond, an Ultrawide-Bandgap Semiconductor for Power Electronics /Kelly Yi-Li Woo. - 1 electronic resource (155 pages)

Source: Dissertations Abstracts International, Volume: 86-05, Section: B.

Silicon-based electronic devices are constrained in their maximum operational voltage due to silicon's low breakdown field. Additionally, silicon's narrow band gap of 1.12 eV restricts their operating temperature range, as thermally generated carriers can degrade performance even at moderate temperatures. To address these challenges, researchers have turned to wide-bandgap materials, which exhibit superior performance in high power and high-frequency applications, as well as in extreme environments. Diamond, with an ultrawide-bandgap of approximately 5.45 eV, offers exceptional physical and electrical properties, including high electron-hole mobilities, a high breakdown electric field, and high thermal conductivity. These attributes make diamond a promising material for efficient semiconductor devices capable of operating at higher voltages than conventional wide-bandgap materials. This thesis evaluates diamond's performance in three areas relevant to power electronics: as a conventional electronic power device, its potential for optical triggering, and its application as a heat spreader for other semiconductor technologies.First, the controllability of the Schottky barrier height (SBH) of diamond Schottky barrier diodes and its effects on device performance were electrically evaluated, with UV-ozone treatment used to increase electron affinity and tune the SBH. This has significant impact on the reverse leakage and threshold voltage of diodes. Forward bias I-V measurements showed precise control of SBH from 1.35 eV to 1.98 eV, although high-temperature anneals consistently decreased the apparent SBH, with longer UV-ozone treatments leading to greater barrier inhomogeneity.For high voltage applications, the use of optical triggers enable safer and more reliable mechanisms for making and breaking circuits. Various diamond structures for extrinsic photoconductive semiconductor switches (PCSS) were investigated, with nitrogen-doped PCSS showing the highest on/off-state current ratio on the order of 1012with 532 nm pulses, while only the CVD-grown boron-doped epilayer and boron-implanted IIa devices were sensitive to 1064 nm. Device performances up to 500 V were demonstrated with responsivity as good as those of GaN and SiC PCSSs.Finally, in using diamond as a heat spreader in thermal engineering, a bottleneck of heat transport lies in the thermal resistance at the interface between the diamond and the semiconductor substrate. Interface engineering between diamond and GaN, and diamond and Si was demonstrated to achieve record-low thermal boundary resistances, facilitating more efficient thermal transport of heat away from the device channel.

English

ISBN: 9798346391142Subjects--Topical Terms:

3267445
Etching.

Electrical, Photoconductive, and Thermal Studies of Diamond, an Ultrawide-Bandgap Semiconductor for Power Electronics /
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520 $a Silicon-based electronic devices are constrained in their maximum operational voltage due to silicon's low breakdown field. Additionally, silicon's narrow band gap of 1.12 eV restricts their operating temperature range, as thermally generated carriers can degrade performance even at moderate temperatures. To address these challenges, researchers have turned to wide-bandgap materials, which exhibit superior performance in high power and high-frequency applications, as well as in extreme environments. Diamond, with an ultrawide-bandgap of approximately 5.45 eV, offers exceptional physical and electrical properties, including high electron-hole mobilities, a high breakdown electric field, and high thermal conductivity. These attributes make diamond a promising material for efficient semiconductor devices capable of operating at higher voltages than conventional wide-bandgap materials. This thesis evaluates diamond's performance in three areas relevant to power electronics: as a conventional electronic power device, its potential for optical triggering, and its application as a heat spreader for other semiconductor technologies.First, the controllability of the Schottky barrier height (SBH) of diamond Schottky barrier diodes and its effects on device performance were electrically evaluated, with UV-ozone treatment used to increase electron affinity and tune the SBH. This has significant impact on the reverse leakage and threshold voltage of diodes. Forward bias I-V measurements showed precise control of SBH from 1.35 eV to 1.98 eV, although high-temperature anneals consistently decreased the apparent SBH, with longer UV-ozone treatments leading to greater barrier inhomogeneity.For high voltage applications, the use of optical triggers enable safer and more reliable mechanisms for making and breaking circuits. Various diamond structures for extrinsic photoconductive semiconductor switches (PCSS) were investigated, with nitrogen-doped PCSS showing the highest on/off-state current ratio on the order of 1012with 532 nm pulses, while only the CVD-grown boron-doped epilayer and boron-implanted IIa devices were sensitive to 1064 nm. Device performances up to 500 V were demonstrated with responsivity as good as those of GaN and SiC PCSSs.Finally, in using diamond as a heat spreader in thermal engineering, a bottleneck of heat transport lies in the thermal resistance at the interface between the diamond and the semiconductor substrate. Interface engineering between diamond and GaN, and diamond and Si was demonstrated to achieve record-low thermal boundary resistances, facilitating more efficient thermal transport of heat away from the device channel.
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