東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Combined Process and Device Simulati...

Mengjie, Li,

Linked to FindBook

Google Book

Amazon

博客來

Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells // Li Mengjie.
Author:	Mengjie, Li,
Description:	1 electronic resource (171 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
Contained By:	Dissertations Abstracts International83-05B.
Subject:	Boron. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28828356
ISBN:	9798460439362

Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells /
Mengjie, Li,

Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells /Li Mengjie. - 1 electronic resource (171 pages)

Source: Dissertations Abstracts International, Volume: 83-05, Section: B.

This thesis focuses on the development of a predictive simulation framework which supports process optimization for BBr3 diffusion and improves the efficiency of silicon solar cells. Five main topics are investigated: a. A Sentaurus TCAD process simulation program is developed and calibrated by experiments. b. The passivation of heavily diffused p+ silicon surfaces is characterized. c. A systematic method to quantify the metallization-induced recombination losses on heavily diffused p+ silicon surfaces is developed, which involves intensity-dependent photoluminescence imaging and image processing with Griddler-AI. d. The experimentally observed microscopic metal-Si interface is studied by 2D unit-cell simulations. e. Combining the developed process and device simulations, cell efficiency improvements due to processing changes are quantified as a function of the process parameters. Experimentally, the efficiency of n-type bifacial front and back contacted silicon solar cells with screen-printed contacts is improved from 18.9 ± 0.5% to 20.8 ± 0.5%.

English

ISBN: 9798460439362Subjects--Topical Terms:

544039
Boron.
Subjects--Index Terms:

Process optimization

Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells /
LDR:02899nmm a22005053i 4500 001 2430599
005 20250527055713.5
006 m o d
007 cr|nu||||||||
008 261011s2018 miu||||||m |||||||eng d
020 $a 9798460439362
035 $a (MiAaPQD)AAI28828356
035 $a (MiAaPQD)USingapore141925
035 $a AAI28828356
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Mengjie, Li, $e author. $3 3818997
245 1 0 $a Combined Process and Device Simulation as a Means to Support BBr3 Tube Furnace Diffusion Process Optimization for Industrial High˗Efficiency N˗Type Crystalline Silicon Solar Cells / $c Li Mengjie.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2018
300 $a 1 electronic resource (171 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 83-05, Section: B.
500 $a Advisors: Mueller, Thomas; Samudra, Ganesh S.; Aberle, Armin G. Committee members: Chunxiang, Zhu.
502 $b Ph.D. $c National University of Singapore (Singapore) $d 2018.
520 $a This thesis focuses on the development of a predictive simulation framework which supports process optimization for BBr3 diffusion and improves the efficiency of silicon solar cells. Five main topics are investigated: a. A Sentaurus TCAD process simulation program is developed and calibrated by experiments. b. The passivation of heavily diffused p+ silicon surfaces is characterized. c. A systematic method to quantify the metallization-induced recombination losses on heavily diffused p+ silicon surfaces is developed, which involves intensity-dependent photoluminescence imaging and image processing with Griddler-AI. d. The experimentally observed microscopic metal-Si interface is studied by 2D unit-cell simulations. e. Combining the developed process and device simulations, cell efficiency improvements due to processing changes are quantified as a function of the process parameters. Experimentally, the efficiency of n-type bifacial front and back contacted silicon solar cells with screen-printed contacts is improved from 18.9 ± 0.5% to 20.8 ± 0.5%.
546 $a English
590 $a School code: 1883
650 4 $a Boron. $3 544039
650 4 $a Silicon nitride. $3 656984
650 4 $a Software. $2 gtt. $3 619355
650 4 $a Lifetime. $3 3684906
650 4 $a Photographs. $3 627415
650 4 $a Sensitivity analysis. $3 3560752
650 4 $a Photovoltaic cells. $3 604818
650 4 $a Silicon wafers. $3 3681738
650 4 $a Diffusion. $3 536283
650 4 $a Energy. $3 876794
650 4 $a Screen printing. $3 3692486
650 4 $a Alternative energy. $3 3436775
650 4 $a Mechanical engineering. $3 649730
650 4 $a Applied mathematics. $3 2122814
653 $a Process optimization
653 $a Passivation
653 $a Recombination losses
653 $a Heavily diffused p+ silicon surfaces
653 $a Metal-Si interface
653 $a Cell efficiency
653 $a Simulation program
690 $a 0791
690 $a 0363
690 $a 0548
690 $a 0364
710 2 $a National University of Singapore (Singapore). $e degree granting institution. $3 3765631
720 1 $a Mueller, Thomas $e degree supervisor.
720 1 $a Samudra, Ganesh S. $e degree supervisor.
720 1 $a Aberle, Armin G. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 83-05B.
790 $a 1883
791 $a Ph.D.
792 $a 2018
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28828356