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Electro-Absorption Modulators using ...

Matin, Pouyan,

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Electro-Absorption Modulators using Intersubband Quantum Well and Interband Quantum Dot Structures /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Electro-Absorption Modulators using Intersubband Quantum Well and Interband Quantum Dot Structures // Pouyan Matin.
Author:	Matin, Pouyan,
Description:	1 electronic resource (302 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-03, Section: B.
Contained By:	Dissertations Abstracts International85-03B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30637804
ISBN:	9798380321679

Electro-Absorption Modulators using Intersubband Quantum Well and Interband Quantum Dot Structures /
Matin, Pouyan,

Electro-Absorption Modulators using Intersubband Quantum Well and Interband Quantum Dot Structures /Pouyan Matin. - 1 electronic resource (302 pages)

Source: Dissertations Abstracts International, Volume: 85-03, Section: B.

Ultrafast EAMs (Electro-Absorption Modulators) which can function in the femtosecond-timescale are increasingly required for attaining ultrahigh-speed data transmission of ∼400Gb/s per channel for the next generation of telecommunication networks. The achievable bandwidth in conventional InP-based EAMs functioning based on IBTs (Interband Transitions) is ∼80Gb/s. This restriction of speed is due to the comparatively slow interband recombination lifetimes caused by the limited absorption saturation recovery time restricted by the sweep-out time of the photo-generated carriers. Alternatively, InP-based EAMs functioning based on ISBTs (Intersubband Transitions) in QW (Quantum Well) owing to the ultrafast intersubband recombination lifetimes could offer enormous bandwidth of ≥400Gb/s per channel. This thesis firstly describes the design and modelling of an ultrafast waveguided EAM based on ISBT in InGaAs/AlAs/AlAsSb asymmetric coupled double quantum well lattice-matched to InP at telecommunication wavelength (λ=1.55 μm). The investigated EAM is expected to have a RC-limited speed (f3dB) of ∼300GHz, 5.1 dB insertion loss, 10 dB extinction ratio, and 5.18 dB/V modulation efficiency at a peak-to-peak voltage of 2.0 V which can support a data rate of ≥600Gb/s. Furthermore, electro-absorption modulation characteristics of various InAs-GaAs QD (Quantum Dot) waveguides on silicon substrate at wavelength ranges of 1290-1340 nm are measured. The 400 µm AR (Anti-Reflection coated) InAs-GaAs QD waveguide at 1302 nm has 2.2 dB extinction ratio, 0.7 dB/V modulation efficiency, and 19 dB insertion loss at a peak-to-peak voltage of 3.0 V. The anticipated modulation bandwidth is ∼2GHz which can support a data rate of ≥4Gb/s. The modulation bandwidth is limited due to the large device capacitance and relatively large active resistance; therefore, it could be significantly improved by decreasing the waveguide length and waveguide width, and by increasing the top and bottom contacts widths. ISBTs-based EAMs due to the ultrafast intersubband recombination lifetimes offer significantly larger modulation bandwidth compared to IBTs-based EAMs.

English

ISBN: 9798380321679Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Asymmetric coupled double quantum well

Electro-Absorption Modulators using Intersubband Quantum Well and Interband Quantum Dot Structures /
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520 $a Ultrafast EAMs (Electro-Absorption Modulators) which can function in the femtosecond-timescale are increasingly required for attaining ultrahigh-speed data transmission of ∼400Gb/s per channel for the next generation of telecommunication networks. The achievable bandwidth in conventional InP-based EAMs functioning based on IBTs (Interband Transitions) is ∼80Gb/s. This restriction of speed is due to the comparatively slow interband recombination lifetimes caused by the limited absorption saturation recovery time restricted by the sweep-out time of the photo-generated carriers. Alternatively, InP-based EAMs functioning based on ISBTs (Intersubband Transitions) in QW (Quantum Well) owing to the ultrafast intersubband recombination lifetimes could offer enormous bandwidth of ≥400Gb/s per channel. This thesis firstly describes the design and modelling of an ultrafast waveguided EAM based on ISBT in InGaAs/AlAs/AlAsSb asymmetric coupled double quantum well lattice-matched to InP at telecommunication wavelength (λ=1.55 μm). The investigated EAM is expected to have a RC-limited speed (f3dB) of ∼300GHz, 5.1 dB insertion loss, 10 dB extinction ratio, and 5.18 dB/V modulation efficiency at a peak-to-peak voltage of 2.0 V which can support a data rate of ≥600Gb/s. Furthermore, electro-absorption modulation characteristics of various InAs-GaAs QD (Quantum Dot) waveguides on silicon substrate at wavelength ranges of 1290-1340 nm are measured. The 400 µm AR (Anti-Reflection coated) InAs-GaAs QD waveguide at 1302 nm has 2.2 dB extinction ratio, 0.7 dB/V modulation efficiency, and 19 dB insertion loss at a peak-to-peak voltage of 3.0 V. The anticipated modulation bandwidth is ∼2GHz which can support a data rate of ≥4Gb/s. The modulation bandwidth is limited due to the large device capacitance and relatively large active resistance; therefore, it could be significantly improved by decreasing the waveguide length and waveguide width, and by increasing the top and bottom contacts widths. ISBTs-based EAMs due to the ultrafast intersubband recombination lifetimes offer significantly larger modulation bandwidth compared to IBTs-based EAMs.
546 $a English
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650 4 $a Electrical engineering. $3 649834
650 4 $a Nanotechnology. $3 526235
650 4 $a Quantum physics. $3 726746
653 $a Asymmetric coupled double quantum well
653 $a Electro-absorption modulator
653 $a Nano-photonic device
653 $a Quantum Well
653 $a Ultrafast Electro-Absorption Modulators
690 $a 0544
690 $a 0652
690 $a 0599
710 2 $a University of London, University College London (United Kingdom). $b Science and Technology Studies. $e degree granting institution. $3 3814655
720 1 $a Seeds, Alwyn $e degree supervisor.
720 1 $a Liu, Huiyun $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 85-03B.
790 $a 6022
791 $a Ph.D.
792 $a 2023
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30637804