東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

GaN HEMT Quartz Crystal Oscillator T...

Currie, Emily Nell,

Linked to FindBook

Google Book

Amazon

博客來

GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications /

Record Type:	Electronic resources : Monograph/item
Title/Author:	GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications // Emily Nell Currie.
Author:	Currie, Emily Nell,
Description:	1 electronic resource (119 pages)
Notes:	Source: Masters Abstracts International, Volume: 86-07.
Contained By:	Masters Abstracts International86-07.
Subject:	Silicon. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31822881
ISBN:	9798302371409

GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications /
Currie, Emily Nell,

GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications /Emily Nell Currie. - 1 electronic resource (119 pages)

Source: Masters Abstracts International, Volume: 86-07.

Oscillator circuits are at the heart of electronics required for communication, frequency control, and sensing. Crystal oscillators, in particular, present very attractive characteristics, such as their low power consumption and high frequency stability. These circuits employ acoustic waves devices as the frequency control element, often a bulk acoustic wave (BAW) resonator. There is an increasing need for communication and sensing circuitry capable of withstanding high temperatures (HT) and harsh environments (HE) in many industries, and a crystal oscillator capable of insertion in such environments and of continuous operation from room temperature to HT is a beneficial addition to many HT and HE systems.One central challenge to implementing these circuits at HT is the temperature limitation of traditional silicon semiconductor devices. Alternative semiconductor technologies such as SiC and GaN are able to operate above the temperature limits of silicon and have been well studied in the literature. Such devices are commercially available but are often temperature limited by their packaging. As part of this research, a commercially available bare-die GaN high electron mobility transistor (HEMT) was characterized between room temperature and 500◦C. The characterization data was used to improve the high temperature performance of the SPICE model provided by the vendor and used to design the oscillator circuit.Another important component in the design of such HT crystal oscillators is the temperature dependence of BAW crystal resonator's characteristics over wide temperature ranges. It is necessary to understand the temperature behavior of the crystal's parameters in order to design a crystal oscillator circuit capable of operation over a wide temperature range. Hence, a commercially available quartz crystal microbalance (QCM) BAW device was characterized from room temperature to 400◦C. The equivalent circuit parameters of the modified Butterworth-Van Dyke model around the resonant frequency were extracted for temperatures up to 400◦C and used in the oscillator circuit design.A quartz crystal oscillator utilizing a commercially available AlxGa1−xN /GaN HEMT and a commercial BAW QCM was designed, simulated, fabricated, and demonstrated from room temperature up to 400◦C in this research. Six oscillator topologies were compared in analysis and simulation for their ability to sustain continuous oscillation over the widest temperature range. The most promising topology was identified and implemented on a high temperature platform consisting of an alumina substrate circuit board, crystal mounting structure, and in-house fabricated passive components. The oscillator was demonstrated to operate continuously over the entire temperature range from room temperature to 400◦C with an overall frequency variation of less than 1%. The oscillation frequency recovered to within 0.01% of its original room temperature value, and the signal amplitude recovered to within 3% of its original room temperature value. The frequency behavior and recoverability of the circuit make it an excellent candidate for high temperature and harsh environment sensing, frequency control, and communication systems.

English

ISBN: 9798302371409Subjects--Topical Terms:

669429
Silicon.
Subjects--Index Terms:

High temperatures

GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications /
LDR:04682nmm a22004213i 4500 001 2428976
005 20250420214402.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798302371409
035 $a (MiAaPQD)AAI31822881
035 $a AAI31822881
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Currie, Emily Nell, $e author. $3 3816538
245 1 0 $a GaN HEMT Quartz Crystal Oscillator Topologies For High Temperature Applications / $c Emily Nell Currie.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (119 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Masters Abstracts International, Volume: 86-07.
500 $a Advisors: da Cunha, Mauricio Pereira; Emanetoglu, Nuri; Bingham, Nicholas.
502 $b M.S. $c The University of Maine $d 2024.
520 $a Oscillator circuits are at the heart of electronics required for communication, frequency control, and sensing. Crystal oscillators, in particular, present very attractive characteristics, such as their low power consumption and high frequency stability. These circuits employ acoustic waves devices as the frequency control element, often a bulk acoustic wave (BAW) resonator. There is an increasing need for communication and sensing circuitry capable of withstanding high temperatures (HT) and harsh environments (HE) in many industries, and a crystal oscillator capable of insertion in such environments and of continuous operation from room temperature to HT is a beneficial addition to many HT and HE systems.One central challenge to implementing these circuits at HT is the temperature limitation of traditional silicon semiconductor devices. Alternative semiconductor technologies such as SiC and GaN are able to operate above the temperature limits of silicon and have been well studied in the literature. Such devices are commercially available but are often temperature limited by their packaging. As part of this research, a commercially available bare-die GaN high electron mobility transistor (HEMT) was characterized between room temperature and 500◦C. The characterization data was used to improve the high temperature performance of the SPICE model provided by the vendor and used to design the oscillator circuit.Another important component in the design of such HT crystal oscillators is the temperature dependence of BAW crystal resonator's characteristics over wide temperature ranges. It is necessary to understand the temperature behavior of the crystal's parameters in order to design a crystal oscillator circuit capable of operation over a wide temperature range. Hence, a commercially available quartz crystal microbalance (QCM) BAW device was characterized from room temperature to 400◦C. The equivalent circuit parameters of the modified Butterworth-Van Dyke model around the resonant frequency were extracted for temperatures up to 400◦C and used in the oscillator circuit design.A quartz crystal oscillator utilizing a commercially available AlxGa1−xN /GaN HEMT and a commercial BAW QCM was designed, simulated, fabricated, and demonstrated from room temperature up to 400◦C in this research. Six oscillator topologies were compared in analysis and simulation for their ability to sustain continuous oscillation over the widest temperature range. The most promising topology was identified and implemented on a high temperature platform consisting of an alumina substrate circuit board, crystal mounting structure, and in-house fabricated passive components. The oscillator was demonstrated to operate continuously over the entire temperature range from room temperature to 400◦C with an overall frequency variation of less than 1%. The oscillation frequency recovered to within 0.01% of its original room temperature value, and the signal amplitude recovered to within 3% of its original room temperature value. The frequency behavior and recoverability of the circuit make it an excellent candidate for high temperature and harsh environment sensing, frequency control, and communication systems.
546 $a English
590 $a School code: 0113
650 4 $a Silicon. $3 669429
650 4 $a Circuits. $3 3555093
650 4 $a Crystal oscillators. $3 3690951
650 4 $a Acoustics. $3 879105
650 4 $a Transistors. $3 713271
650 4 $a Gallium arsenide. $3 3681863
650 4 $a High temperature. $3 3681917
650 4 $a Signal processing. $3 533904
650 4 $a Electrical engineering. $3 649834
653 $a High temperatures
653 $a Bulk acoustic wave
653 $a Oscillator circuits
690 $a 0986
690 $a 0544
710 2 $a The University of Maine. $e degree granting institution. $3 3816059
720 1 $a da Cunha, Mauricio Pereira $e degree supervisor.
720 1 $a Emanetoglu, Nuri $e degree supervisor.
720 1 $a Bingham, Nicholas $e degree supervisor.
773 0 $t Masters Abstracts International $g 86-07.
790 $a 0113
791 $a M.S.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31822881