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Processing of polyimidesiloxanes for...

Jeng, Syangywan,

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Processing of polyimidesiloxanes for microelectronic packaging /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Processing of polyimidesiloxanes for microelectronic packaging // Syangywan Jeng.
Author:	Jeng, Syangywan,
Description:	1 electronic resource (141 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 54-11, Section: B.
Contained By:	Dissertations Abstracts International54-11B.
Subject:	Electrical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9301861
ISBN:	9798208134900

Processing of polyimidesiloxanes for microelectronic packaging /
Jeng, Syangywan,

Processing of polyimidesiloxanes for microelectronic packaging /Syangywan Jeng. - 1 electronic resource (141 pages)

Source: Dissertations Abstracts International, Volume: 54-11, Section: B.

A newly developed and fully imidized polyimidesiloxanes (SIMs) were studied in terms of their processing capabilities and physical properties. With the incorporation of siloxanes and the pre-imidized characteristics, SIMs have the advantages of low modulus, low dielectric constant, low water absorption, excellent adhesion and low curing temperature. Their general properties such as planarization, thermal stability, water absorption, dielectric performance and reliability in an accelerated aging environment were studied. In order to apply SIMs in thin film packaging, two dry etching techniques, i.e. laser ablation and reactive ion etching (RIE), and a new photosensitive SIM were also investigated extensively. Among them, RIE shows the finest definition of interconnection via. The laser ablation offers the simplest process which is maskless and requires no reactive gases. Photosensitive SIMs have the advantages of low processing cost and compatibility with the existing photolithographic technology.

English

ISBN: 9798208134900Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

packaging

Processing of polyimidesiloxanes for microelectronic packaging /
LDR:02186nmm a22003613i 4500 001 2428820
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007 cr|nu||||||||
008 261011s1992 miu||||||m |||||||eng d
020 $a 9798208134900
035 $a (MiAaPQD)AAI9301861
035 $a AAI9301861
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Jeng, Syangywan, $e author. $3 3816274
245 1 0 $a Processing of polyimidesiloxanes for microelectronic packaging / $c Syangywan Jeng.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 1992
300 $a 1 electronic resource (141 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 54-11, Section: B.
500 $a Publisher info.: Dissertation/Thesis.
502 $b Ph.D. $c State University of New York at Buffalo $d 1992.
520 $a A newly developed and fully imidized polyimidesiloxanes (SIMs) were studied in terms of their processing capabilities and physical properties. With the incorporation of siloxanes and the pre-imidized characteristics, SIMs have the advantages of low modulus, low dielectric constant, low water absorption, excellent adhesion and low curing temperature. Their general properties such as planarization, thermal stability, water absorption, dielectric performance and reliability in an accelerated aging environment were studied. In order to apply SIMs in thin film packaging, two dry etching techniques, i.e. laser ablation and reactive ion etching (RIE), and a new photosensitive SIM were also investigated extensively. Among them, RIE shows the finest definition of interconnection via. The laser ablation offers the simplest process which is maskless and requires no reactive gases. Photosensitive SIMs have the advantages of low processing cost and compatibility with the existing photolithographic technology.
546 $a English
590 $a School code: 0656
650 4 $a Electrical engineering. $3 649834
650 4 $a Organic chemistry. $3 523952
653 $a packaging
690 $a 0544
690 $a 0490
710 2 $a State University of New York at Buffalo. $e degree granting institution. $3 3816262
773 0 $t Dissertations Abstracts International $g 54-11B.
790 $a 0656
791 $a Ph.D.
792 $a 1992
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9301861