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MBE Growth of Semiconductor Quantum ...

Ju, Zheng,

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MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications /

Record Type:	Electronic resources : Monograph/item
Title/Author:	MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications // Zheng Ju.
Author:	Ju, Zheng,
Description:	1 electronic resource (129 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-06, Section: B.
Contained By:	Dissertations Abstracts International85-06B.
Subject:	Applied physics. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30695692
ISBN:	9798381160987

MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications /
Ju, Zheng,

MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications /Zheng Ju. - 1 electronic resource (129 pages)

Source: Dissertations Abstracts International, Volume: 85-06, Section: B.

The first part of this dissertation focuses on quantum structures with type-II band alignment, which are designed for applications in infrared photodetection and optical nonlinearity. A short- and mid-wavelength infrared dual-band optically-addressed photodetector structure has been designed and fabricated by molecular beam epitaxy, which is used to demonstrate the operational principles of optical address for extended tri-band detection. High-resolution x-ray diffraction and photoluminescence measurement were used to characterize the samples and revealed excellent crystalline quality and optical properties. An analytical model has been developed to address the effects of luminescence coupling and light leakage effects in optically-addressed tri-band photodetectors in terms of the absorber thicknesses and photoluminescence quantum efficiencies.Beyond superlattices, asymmetric quantum wells with type-II band alignment find application in optical nonlinearity enhancement which is the result of increased wavefunction overlap and larger electric dipole moments of the interband transitions compared to the conventional structures with type-I band edge alignment. The novel type-II AQW structure exhibits interband second-order susceptibility tensor elements ranging between 20 pm/V to 1.60x103 pm/V for nearly-resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly one order of magnitude over the type-I structures and one to three orders of magnitude over natural crystals such as LiNbO3, KTP, or GaAs. A factor of 2-3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells.The second part of the dissertation reports the study of CdSe thin films with mixed zincblende and wurtzite phases grown on lattice-matched InAs(100) substrate using molecular beam epitaxy. These CdSe thin films reveal single-phase zincblende (ZB) structure with high crystalline quality with low defect density. In contrast, CdSe layers grown on lattice-matched InAs(111)B (As-terminated) substrates under different growth temperatures and Cd/Se flux ratios all have their demonstrated mixed ZB and wurtzite phases in coexistence confirmed by high-resolution x-ray diffraction, transmission electron microscopy and photoluminescence measurements. The reason for these properties is due to the small formation energy difference between the ZB and WZ phases of CdSe, which has been confirmed by density functional theory simulations.

English

ISBN: 9798381160987Subjects--Topical Terms:

3343996
Applied physics.
Subjects--Index Terms:

Solar cell

MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications /
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245 1 0 $a MBE Growth of Semiconductor Quantum Structures With Type-II Band Alignment and CdSe Thin Films for Device Applications / $c Zheng Ju.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2023
300 $a 1 electronic resource (129 pages)
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500 $a Source: Dissertations Abstracts International, Volume: 85-06, Section: B.
500 $a Advisors: Zhang, Yong-Hang Committee members: Smith, David J.; Johnson, Shane R.; Ponce, Fernando A.
502 $b Ph.D. $c Arizona State University $d 2023.
520 $a The first part of this dissertation focuses on quantum structures with type-II band alignment, which are designed for applications in infrared photodetection and optical nonlinearity. A short- and mid-wavelength infrared dual-band optically-addressed photodetector structure has been designed and fabricated by molecular beam epitaxy, which is used to demonstrate the operational principles of optical address for extended tri-band detection. High-resolution x-ray diffraction and photoluminescence measurement were used to characterize the samples and revealed excellent crystalline quality and optical properties. An analytical model has been developed to address the effects of luminescence coupling and light leakage effects in optically-addressed tri-band photodetectors in terms of the absorber thicknesses and photoluminescence quantum efficiencies.Beyond superlattices, asymmetric quantum wells with type-II band alignment find application in optical nonlinearity enhancement which is the result of increased wavefunction overlap and larger electric dipole moments of the interband transitions compared to the conventional structures with type-I band edge alignment. The novel type-II AQW structure exhibits interband second-order susceptibility tensor elements ranging between 20 pm/V to 1.60x103 pm/V for nearly-resonant optical rectification and difference frequency generation applications at near-infrared and terahertz wavelengths, an improvement of nearly one order of magnitude over the type-I structures and one to three orders of magnitude over natural crystals such as LiNbO3, KTP, or GaAs. A factor of 2-3 further enhancement of the tensor elements is achieved by optimizing the well widths and band offsets of the type-II asymmetric quantum wells.The second part of the dissertation reports the study of CdSe thin films with mixed zincblende and wurtzite phases grown on lattice-matched InAs(100) substrate using molecular beam epitaxy. These CdSe thin films reveal single-phase zincblende (ZB) structure with high crystalline quality with low defect density. In contrast, CdSe layers grown on lattice-matched InAs(111)B (As-terminated) substrates under different growth temperatures and Cd/Se flux ratios all have their demonstrated mixed ZB and wurtzite phases in coexistence confirmed by high-resolution x-ray diffraction, transmission electron microscopy and photoluminescence measurements. The reason for these properties is due to the small formation energy difference between the ZB and WZ phases of CdSe, which has been confirmed by density functional theory simulations.
546 $a English
590 $a School code: 0010
650 4 $a Applied physics. $3 3343996
650 4 $a Electrical engineering. $3 649834
650 4 $a Materials science. $3 543314
653 $a Solar cell
653 $a Infrared detector
653 $a Molecular beam epitaxy
653 $a Multi-band photodetector
653 $a Optical nonlinearity
653 $a Type-II superlattice
690 $a 0215
690 $a 0794
690 $a 0544
710 2 $a Arizona State University. $b Physics. $e degree granting institution. $3 3816096
720 1 $a Zhang, Yong-Hang $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 85-06B.
790 $a 0010
791 $a Ph.D.
792 $a 2023
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30695692