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Toward High Operating Temperature Al...

Drury, Daniel E., III,

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Toward High Operating Temperature AlN-Based Ferroelectric Random Access Memory /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Toward High Operating Temperature AlN-Based Ferroelectric Random Access Memory // Daniel E Drury III.
Author:	Drury, Daniel E., III,
Description:	1 electronic resource (133 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
Contained By:	Dissertations Abstracts International85-12B.
Subject:	Materials science. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30696183
ISBN:	9798383124475

Toward High Operating Temperature AlN-Based Ferroelectric Random Access Memory /
Drury, Daniel E., III,

Toward High Operating Temperature AlN-Based Ferroelectric Random Access Memory /Daniel E Drury III. - 1 electronic resource (133 pages)

Source: Dissertations Abstracts International, Volume: 85-12, Section: B.

There is an absence of non-volatile memory technologies that can operate beyond 200 °C. The development of high operating temperature (HOT) ferroelectric random access memory (RAM) based on wurtzite nitride materials is promising for enabling data storage in extreme environments such as Venus long lander missions, jet engine monitoring, automotive applications, and geothermal exploration. Conventionally, electronic systems are designed to withstand up to 125 °C with a few platforms rated to 200 °C. When considering applications upwards of 300 °C, there is an inherent difficulty and lack of materials capable of withstanding these conditions. Thermal energy severely impacts Si-base technologies, therefore a shift toward SiC is necessary due to the larger band gap, structural stability, and inert behavior. Currently, two major challenges lie ahead for HOT electronics: non-volatile memory and packaging. In the ferroelectrics field, the discovery of a wurtzite and a nitride material in 2019 provided two unique characteristics and therefore, a novel set of material properties to study and harness. Here, the focus is on Al1−xScxN and Al1−yByN synthesis, temperature-dependent electrical properties, and the applicability and compatibility for integration with SiC-based fabrication processes as a non-volatile memory component. The first step toward this goal is to establish a reliable and repeatable thin film deposition process for AlScN and AlBN, which was accomplished by optimizing against the desired structural (c-axis texture) and electrical properties (ferroelectric switching). While these properties can be tuned with many factors, the substrate quality, substrate temperature, glow-discharge stability, and gas composition are among the most significant. Sputter deposition processes were developed to synthesize epitaxial ferroelectric AlMN/Mo/4H-SiC (M=Sc or B) heterostructures to use for high-temperature electrical characterization. Switching dynamics, fatigue effects, imprint behavior, and polarization retention are the primary performance metrics investigated between 23 and 400 °C to develop a holistic understanding of an AlN-based ferroelectric RAM. Additionally, the highest temperature ferroelectric hysteresis loops were conducted at 800 °C on an Al0.7Sc0.3N/Mo/4H-SiC stack. The materials, techniques, and perspectives developed throughout this thesis ensure further exploration and integration of AlN-based ferroelectrics in novel devices.

English

ISBN: 9798383124475Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Ferroelectric

Toward High Operating Temperature AlN-Based Ferroelectric Random Access Memory /
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500 $a Source: Dissertations Abstracts International, Volume: 85-12, Section: B.
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502 $b Ph.D. $c Colorado School of Mines $d 2023.
520 $a There is an absence of non-volatile memory technologies that can operate beyond 200 °C. The development of high operating temperature (HOT) ferroelectric random access memory (RAM) based on wurtzite nitride materials is promising for enabling data storage in extreme environments such as Venus long lander missions, jet engine monitoring, automotive applications, and geothermal exploration. Conventionally, electronic systems are designed to withstand up to 125 °C with a few platforms rated to 200 °C. When considering applications upwards of 300 °C, there is an inherent difficulty and lack of materials capable of withstanding these conditions. Thermal energy severely impacts Si-base technologies, therefore a shift toward SiC is necessary due to the larger band gap, structural stability, and inert behavior. Currently, two major challenges lie ahead for HOT electronics: non-volatile memory and packaging. In the ferroelectrics field, the discovery of a wurtzite and a nitride material in 2019 provided two unique characteristics and therefore, a novel set of material properties to study and harness. Here, the focus is on Al1−xScxN and Al1−yByN synthesis, temperature-dependent electrical properties, and the applicability and compatibility for integration with SiC-based fabrication processes as a non-volatile memory component. The first step toward this goal is to establish a reliable and repeatable thin film deposition process for AlScN and AlBN, which was accomplished by optimizing against the desired structural (c-axis texture) and electrical properties (ferroelectric switching). While these properties can be tuned with many factors, the substrate quality, substrate temperature, glow-discharge stability, and gas composition are among the most significant. Sputter deposition processes were developed to synthesize epitaxial ferroelectric AlMN/Mo/4H-SiC (M=Sc or B) heterostructures to use for high-temperature electrical characterization. Switching dynamics, fatigue effects, imprint behavior, and polarization retention are the primary performance metrics investigated between 23 and 400 °C to develop a holistic understanding of an AlN-based ferroelectric RAM. Additionally, the highest temperature ferroelectric hysteresis loops were conducted at 800 °C on an Al0.7Sc0.3N/Mo/4H-SiC stack. The materials, techniques, and perspectives developed throughout this thesis ensure further exploration and integration of AlN-based ferroelectrics in novel devices.
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650 4 $a Applied physics. $3 3343996
650 4 $a High temperature physics. $3 3192580
653 $a Ferroelectric
653 $a High operating temperature
653 $a Non-volatile memory
653 $a Nitride
653 $a Sputter deposition
690 $a 0794
690 $a 0597
690 $a 0215
710 2 $a Colorado School of Mines. $b Metallurgical and Materials Engineering. $e degree granting institution. $3 3815642
720 1 $a Brennecka, Geoffrey L. $e degree supervisor.
720 1 $a Dugan, Brandon $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 85-12B.
790 $a 0052
791 $a Ph.D.
792 $a 2023
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30696183