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Novel Approach to TCAD Strain Simula...

Weingartner, Thomas,

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Novel Approach to TCAD Strain Simulation /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Novel Approach to TCAD Strain Simulation // Thomas Weingartner.
作者:	Weingartner, Thomas,
面頁冊數:	1 electronic resource (113 pages)
附註:	Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
Contained By:	Dissertations Abstracts International85-01B.
標題:	Computational physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30417394
ISBN:	9798379757021

Novel Approach to TCAD Strain Simulation /
Weingartner, Thomas,

Novel Approach to TCAD Strain Simulation /Thomas Weingartner. - 1 electronic resource (113 pages)

Source: Dissertations Abstracts International, Volume: 85-01, Section: B.

The physics of strained semiconductors is a broad but well-understood topic. However, current Technology Computer-Aided Design (TCAD) models do not reflect the underlying strain physics but mimic it through the use of many empirical models. These empirical models are piezoresistance, piezojunction, and piezo-Hall. In this dissertation, semi-classical TCAD anisotropic transport models are formulated with strain physics in mind to more succinctly model observed strain effects. Incorporating strain physics requires understanding the underlying crystal symmetry and quantum mechanical band structure concepts. This new TCAD formulation of strain physics enables predictive simulation of temperature and doping trends while encompassing existing measurement data. The anisotropic formulation makes integration with quantum mechanical correction models, such as the density gradient method, more straightforward and less dependent on fitting parameters. The model enables coupling strain effects to low magnetic fields, yielding the piezo-Hall effect. Though not novel, the strain model encompasses bipolar strain effects as well. However, the number of parameters usually necessary to simulate a bipolar device is reduced. An example of each strain effect will be given with the following device examples: resistor, Hall sensor, metal oxide semiconductor transistor, and a bipolar junction transistor. This dissertation aims to show a more accurate description of band structure physics in TCAD simulators that can enable universal device strain simulation.

English

ISBN: 9798379757021Subjects--Topical Terms:

3343998
Computational physics.
Subjects--Index Terms:

Semiconductors

Novel Approach to TCAD Strain Simulation /
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300 $a 1 electronic resource (113 pages)
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500 $a Source: Dissertations Abstracts International, Volume: 85-01, Section: B.
500 $a Advisors: Law, Mark E. Committee members: Patrick, Erin E.; Guo, Jing; Thompson, Scott E.; Jones, Kevin S.
502 $b Ph.D. $c University of Florida $d 2023.
520 $a The physics of strained semiconductors is a broad but well-understood topic. However, current Technology Computer-Aided Design (TCAD) models do not reflect the underlying strain physics but mimic it through the use of many empirical models. These empirical models are piezoresistance, piezojunction, and piezo-Hall. In this dissertation, semi-classical TCAD anisotropic transport models are formulated with strain physics in mind to more succinctly model observed strain effects. Incorporating strain physics requires understanding the underlying crystal symmetry and quantum mechanical band structure concepts. This new TCAD formulation of strain physics enables predictive simulation of temperature and doping trends while encompassing existing measurement data. The anisotropic formulation makes integration with quantum mechanical correction models, such as the density gradient method, more straightforward and less dependent on fitting parameters. The model enables coupling strain effects to low magnetic fields, yielding the piezo-Hall effect. Though not novel, the strain model encompasses bipolar strain effects as well. However, the number of parameters usually necessary to simulate a bipolar device is reduced. An example of each strain effect will be given with the following device examples: resistor, Hall sensor, metal oxide semiconductor transistor, and a bipolar junction transistor. This dissertation aims to show a more accurate description of band structure physics in TCAD simulators that can enable universal device strain simulation.
546 $a English
590 $a School code: 0070
650 4 $a Computational physics. $3 3343998
650 4 $a Electromagnetics. $3 3173223
650 4 $a Condensed matter physics. $3 3173567
653 $a Semiconductors
653 $a Silicon
653 $a Simulation
653 $a Strain
653 $a Stress
653 $a TCAD
690 $a 0216
690 $a 0611
690 $a 0607
710 2 $a University of Florida. $b Electrical and Computer Engineering. $e degree granting institution. $3 3815612
720 1 $a Law, Mark E. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 85-01B.
790 $a 0070
791 $a Ph.D.
792 $a 2023
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30417394