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Optical characterization of microstr...

Xu, Shijie.

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Optical characterization of microstructures and optoelectronic devices based on wide band gap semiconductors

Record Type:	Electronic resources : Monograph/item
Title/Author:	Optical characterization of microstructures and optoelectronic devices based on wide band gap semiconductors/ edited by Shijie Xu.
other author:	Xu, Shijie.
Published:	Singapore :Springer Nature Singapore : : 2025.,
Description:	xii, 373 p. :ill., digital ;24 cm.
[NT 15003449]:	Wide band gap semiconductor laser technology and characterization -- Growth and characterization of GaN-based lasers on silicon substrates -- Efficiency characterization of GaN-based LEDs -- Preparation and optoelectronic properties of GaN-based Micro-LEDs -- Key factors restricting the external quantum efficiency of GaN-based micro-LEDsand solutions -- Growth and optical characterization of non-polar and semi-polar GaN-based LEDs -- Construction and characterization of ZnO micro-nano lasers -- Ga2O3 solar blind deep ultraviolet detectors -- Optoelectronic properties and characterization of gallium-doped ZnO -- Optoelectronic process characterization of localized carriers in semiconductors and photovoltaic devices -- Photoluminescence properties and characterization of InGaN/GaN nanowire quantum dots -- Characterization of nonlinear optical properties of ZnO single crystals and micro-nano structures.
Contained By:	Springer Nature eBook
Subject:	Wide gap semiconductors. -
Online resource:	https://doi.org/10.1007/978-981-95-1928-6
ISBN:	9789819519286

Optical characterization of microstructures and optoelectronic devices based on wide band gap semiconductors
Optical characterization of microstructures and optoelectronic devices based on wide band gap semiconductors[electronic resource] /edited by Shijie Xu. - Singapore :Springer Nature Singapore :2025. - xii, 373 p. :ill., digital ;24 cm. - Wide bandgap semiconductors,2948-2615. - Wide bandgap semiconductors..

Wide band gap semiconductor laser technology and characterization -- Growth and characterization of GaN-based lasers on silicon substrates -- Efficiency characterization of GaN-based LEDs -- Preparation and optoelectronic properties of GaN-based Micro-LEDs -- Key factors restricting the external quantum efficiency of GaN-based micro-LEDsand solutions -- Growth and optical characterization of non-polar and semi-polar GaN-based LEDs -- Construction and characterization of ZnO micro-nano lasers -- Ga2O3 solar blind deep ultraviolet detectors -- Optoelectronic properties and characterization of gallium-doped ZnO -- Optoelectronic process characterization of localized carriers in semiconductors and photovoltaic devices -- Photoluminescence properties and characterization of InGaN/GaN nanowire quantum dots -- Characterization of nonlinear optical properties of ZnO single crystals and micro-nano structures.

This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices. This book consists of 12 chapters, mainly presenting the authors' own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.

ISBN: 9789819519286

Standard No.: 10.1007/978-981-95-1928-6doiSubjects--Topical Terms:

770530
Wide gap semiconductors.

LC Class. No.: QC611.8.W53

Dewey Class. No.: 621.38152

Optical characterization of microstructures and optoelectronic devices based on wide band gap semiconductors
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505 0 $a Wide band gap semiconductor laser technology and characterization -- Growth and characterization of GaN-based lasers on silicon substrates -- Efficiency characterization of GaN-based LEDs -- Preparation and optoelectronic properties of GaN-based Micro-LEDs -- Key factors restricting the external quantum efficiency of GaN-based micro-LEDsand solutions -- Growth and optical characterization of non-polar and semi-polar GaN-based LEDs -- Construction and characterization of ZnO micro-nano lasers -- Ga2O3 solar blind deep ultraviolet detectors -- Optoelectronic properties and characterization of gallium-doped ZnO -- Optoelectronic process characterization of localized carriers in semiconductors and photovoltaic devices -- Photoluminescence properties and characterization of InGaN/GaN nanowire quantum dots -- Characterization of nonlinear optical properties of ZnO single crystals and micro-nano structures.
520 $a This book focuses on the optical characterization of wide band gap semiconductor micro-nano structures and advanced optoelectronic devices including GaN-based laser diodes, GaN-based micro-LEDs, ZnO-based micro-lasers, Ga2O3-based deep UV photodetectors, etc., written by leading scholars in the field from the perspective of applied research and development of advanced optoelectronic devices. This book consists of 12 chapters, mainly presenting the authors' own new findings, new theoretical models and experimental results, which can benefit researchers, engineers and postgraduate students in the field of semiconductor optoelectronics.
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