東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Silicon carbide power devices = char...

Gao, Yuan.

Linked to FindBook

Google Book

Amazon

博客來

Silicon carbide power devices = characteristics, test and application /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Silicon carbide power devices/ by Yuan Gao, Yan Zhang.
Reminder of title:	characteristics, test and application /
Author:	Gao, Yuan.
other author:	Zhang, Yan.
Published:	Singapore :Springer Nature Singapore : : 2025.,
Description:	xl, 663 p. :ill., digital ;24 cm.
[NT 15003449]:	Fundamentals of Power Semiconductor Devices -- SiC Diode Main Characteristics -- Interpretation, Testing, and Application of SiC MOSFET Parameters -- Comparison of SiC and Si Device Characteristics -- Double-Pulse Test -- SiC Device Testing and Failure Analysis Techniques -- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot -- Effects and Mitigation of High dv/dt - Crosstalk -- Impact and Countermeasures of High dv/dt - Common Mode Current -- Effects and Countermeasures of Common Source Inductance -- Drive Circuit -- Main Applications of SiC Devices.
Contained By:	Springer Nature eBook
Subject:	Semiconductors. -
Online resource:	https://doi.org/10.1007/978-981-96-3480-4
ISBN:	9789819634804

Silicon carbide power devices = characteristics, test and application /
Gao, Yuan.

Silicon carbide power devicescharacteristics, test and application /[electronic resource] :by Yuan Gao, Yan Zhang. - Singapore :Springer Nature Singapore :2025. - xl, 663 p. :ill., digital ;24 cm. - CPSS power electronics series,2520-8861. - CPSS power electronics series..

Fundamentals of Power Semiconductor Devices -- SiC Diode Main Characteristics -- Interpretation, Testing, and Application of SiC MOSFET Parameters -- Comparison of SiC and Si Device Characteristics -- Double-Pulse Test -- SiC Device Testing and Failure Analysis Techniques -- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot -- Effects and Mitigation of High dv/dt - Crosstalk -- Impact and Countermeasures of High dv/dt - Common Mode Current -- Effects and Countermeasures of Common Source Inductance -- Drive Circuit -- Main Applications of SiC Devices.

This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.

ISBN: 9789819634804

Standard No.: 10.1007/978-981-96-3480-4doiSubjects--Topical Terms:

516162
Semiconductors.

LC Class. No.: TK7881.15 / .G36 2025

Dewey Class. No.: 621.38152

Silicon carbide power devices = characteristics, test and application /
LDR:03559nmm a2200337 a 4500 001 2414179
003 DE-He213
005 20250901130252.0
006 m d
007 cr nn 008maaau
008 260205s2025 si s 0 eng d
020 $a 9789819634804 $q (electronic bk.)
020 $a 9789819634798 $q (paper)
024 7 $a 10.1007/978-981-96-3480-4 $2 doi
035 $a 978-981-96-3480-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7881.15 $b .G36 2025
072 7 $a THR $2 bicssc
072 7 $a TEC008000 $2 bisacsh
072 7 $a THR $2 thema
082 0 4 $a 621.38152 $2 23
090 $a TK7881.15 $b .G211 2025
100 1 $a Gao, Yuan. $3 1244884
245 1 0 $a Silicon carbide power devices $h [electronic resource] : $b characteristics, test and application / $c by Yuan Gao, Yan Zhang.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2025.
300 $a xl, 663 p. : $b ill., digital ; $c 24 cm.
490 1 $a CPSS power electronics series, $x 2520-8861
505 0 $a Fundamentals of Power Semiconductor Devices -- SiC Diode Main Characteristics -- Interpretation, Testing, and Application of SiC MOSFET Parameters -- Comparison of SiC and Si Device Characteristics -- Double-Pulse Test -- SiC Device Testing and Failure Analysis Techniques -- High di/dt Effects and Countermeasures - Turn-off Voltage Overshoot -- Effects and Mitigation of High dv/dt - Crosstalk -- Impact and Countermeasures of High dv/dt - Common Mode Current -- Effects and Countermeasures of Common Source Inductance -- Drive Circuit -- Main Applications of SiC Devices.
520 $a This book provides comprehensive technical information on SiC power devices from multiple perspectives, covering topics from device research and development to system applications. Chapters 1 to 4 focus on the characteristics of SiC devices, initially outlining the limitations of Si power devices and explaining why SiC has superior properties at the material level. It then offers updates on the latest developments in the SiC industry chain and products innovations, along with a detailed discussion of the characteristics and specifications of SiC Diodes and MOSFETs. Chapters 5 and 6 zoom in on SiC device testing and evaluation techniques, including CP testing, FT testing, system application testing, reliability assessment, failure analysis, and double-pulse testing. Chapters 7 to 12 focus on SiC device application technology, addressing common challenges in real applications and providing solutions. This includes voltage spikes during turn-off, crosstalk, common-mode current, common-source inductance, and driver circuits, concluding with case studies of SiC device applications in various scenarios. The book can serve as a textbook for higher education and vocational training, as well as a reference material for engineers in the power semiconductor and electrical electronics industries. To make the book genuinely helpful for readers, the authors have invested significant effort in content and data selection. First, the chosen technical points come from real-world requirements in device R&D and applications. Second, the book emphasizes practicality while integrating cutting-edge developments, detailing research outcomes with industrial potential. Third, the book offers a wealth of data and waveforms, most of which are actual measurements, to bridge the gap between theory and practice. Lastly, extensive further reading materials are provided at the end of each chapter for broader and deeper exploration.
650 0 $a Semiconductors. $3 516162
650 0 $a Silicon carbide $x Electric properties. $3 766512
650 0 $a Teaching $x Aids and devices. $3 539350
650 1 4 $a Power Electronics. $3 3592515
650 2 4 $a Electronic Circuits and Systems. $3 3538814
700 1 $a Zhang, Yan. $3 1035418
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
830 0 $a CPSS power electronics series. $3 3295587
856 4 0 $u https://doi.org/10.1007/978-981-96-3480-4
950 $a Energy (SpringerNature-40367)