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Cmos plasma and process damage

Record Type:	Electronic resources : Monograph/item
Title/Author:	Cmos plasma and process damage/ by Kirk Prall.
Author:	Prall, Kirk.
Published:	Cham :Springer Nature Switzerland : : 2025.,
Description:	xix, 466 p. :ill. (some col.), digital ;24 cm.
[NT 15003449]:	Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.
Contained By:	Springer Nature eBook
Subject:	Metal oxide semiconductors, Complementary. -
Online resource:	https://doi.org/10.1007/978-3-031-89029-1
ISBN:	9783031890291

Cmos plasma and process damage
Prall, Kirk.

Cmos plasma and process damage[electronic resource] /by Kirk Prall. - Cham :Springer Nature Switzerland :2025. - xix, 466 p. :ill. (some col.), digital ;24 cm.

Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.

This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.

ISBN: 9783031890291

Standard No.: 10.1007/978-3-031-89029-1doiSubjects--Topical Terms:

649504
Metal oxide semiconductors, Complementary.

LC Class. No.: TK7871.99.M44

Dewey Class. No.: 537.6223

Cmos plasma and process damage
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245 1 0 $a Cmos plasma and process damage $h [electronic resource] / $c by Kirk Prall.
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505 0 $a Chapter 1. BACKGROUND -- Chapter 2. THE ANTENNA EFFECT -- Chapter 3. DIODE AND TRANSISTOR PROTECTION -- Chapter 4. SIGNATURES OF PROCESS DAMAGE -- Chapter 5. ELECTRICAL SIGNATURES OF PROCESS DAMAGE -- Chapter 6. LATENT DAMAGE AND RELIABILITY DEGRADATION -- Chapter 7. ATOMIC-LEVEL DEFECTS AND ELECTRICAL EFFECTS -- Chapter 8. TECHNOLOGY SPECIFIC PROCESS DAMAGE -- Chapter 9. COMMON SOURCES OF PROCESS DAMAGE -- Chapter 10. INLINE PROCESS DAMAGE MEASUREMENTS -- Chapter 11. PROCESS DAMAGE TEST STRUCTURES -- Chapter 12. DESIGN RULES RELATED TO PROCESS DAMAGE -- Chapter 13. PARAMETRIC DAMAGE TESTING STRATEGY AND PROCEDURES -- Chapter 14. THE ROLE OF HYDROGEN -- Chapter 15. METALLIC DEFECTS -- Chapter 16. MOBILE ION CONTAMINATION -- Chapter 17. FIXED CHARGE.
520 $a This book discusses the complex technology of building CMOS computer chips and covers some of the unusual problems that can occur during chip manufacturing. Readers will learn how plasma and process damage results from the high-energy processes that are used in chip manufacturing, causing harm to the chips, functional failure and reliability problems. Provides an up-to-date, single-source reference on CMOS plasma and process damage, for engineers from all disciplines Offers concise, comprehensive coverage, discussing real problems with necessary background for working engineers Applies to design, layout, mask making, lithography, process and device engineering, testing and reliability.
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650 0 $a Plasma devices. $3 3218824
650 1 4 $a Electronics Design and Verification. $3 3592716
650 2 4 $a Embedded Systems. $3 3592715
650 2 4 $a Electronic Devices. $3 3538495
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