東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Modeling of AlGaN/GaN high electron ...

D., Nirmal.

Linked to FindBook

Google Book

Amazon

博客來

Modeling of AlGaN/GaN high electron mobility transistors

Record Type:	Electronic resources : Monograph/item
Title/Author:	Modeling of AlGaN/GaN high electron mobility transistors/ edited by D. Nirmal, J. Ajayan.
other author:	D., Nirmal.
Published:	Singapore :Springer Nature Singapore : : 2025.,
Description:	xii, 261 p. :ill. (some col.), digital ;24 cm.
[NT 15003449]:	Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.
Contained By:	Springer Nature eBook
Subject:	Modulation-doped field-effect transistors. -
Online resource:	https://doi.org/10.1007/978-981-97-7506-4
ISBN:	9789819775064

Modeling of AlGaN/GaN high electron mobility transistors
Modeling of AlGaN/GaN high electron mobility transistors[electronic resource] /edited by D. Nirmal, J. Ajayan. - Singapore :Springer Nature Singapore :2025. - xii, 261 p. :ill. (some col.), digital ;24 cm. - Springer tracts in electrical and electronics engineering,2731-4219. - Springer tracts in electrical and electronics engineering..

Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.

This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.

ISBN: 9789819775064

Standard No.: 10.1007/978-981-97-7506-4doiSubjects--Topical Terms:

3399546
Modulation-doped field-effect transistors.

LC Class. No.: TK7871.95

Dewey Class. No.: 621.3815284

Modeling of AlGaN/GaN high electron mobility transistors
LDR:02436nmm a2200337 a 4500 001 2408370
003 DE-He213
005 20241224115255.0
006 m o d
007 cr nn 008maaau
008 260204s2025 si s 0 eng d
020 $a 9789819775064 $q (electronic bk.)
020 $a 9789819775057 $q (paper)
024 7 $a 10.1007/978-981-97-7506-4 $2 doi
035 $a 978-981-97-7506-4
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
072 7 $a TJFC $2 thema
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .M689 2025
245 0 0 $a Modeling of AlGaN/GaN high electron mobility transistors $h [electronic resource] / $c edited by D. Nirmal, J. Ajayan.
260 $a Singapore : $b Springer Nature Singapore : $b Imprint: Springer, $c 2025.
300 $a xii, 261 p. : $b ill. (some col.), digital ; $c 24 cm.
490 1 $a Springer tracts in electrical and electronics engineering, $x 2731-4219
505 0 $a Compact surface potential based algan/gan hemt models -- Physical Modelling of Charge Trapping Effects -- Recent Developments and Applications of High Electron Mobility Transistors -- Neural network based gan hemt modeling techniques.
520 $a This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
650 0 $a Modulation-doped field-effect transistors. $3 3399546
650 0 $a Gallium nitride. $3 700928
650 1 4 $a Electronic Circuits and Systems. $3 3538814
650 2 4 $a Cyber-Physical Systems. $3 3591993
650 2 4 $a Electronic Devices. $3 3538495
650 2 4 $a Electronic Materials. $3 3591866
700 1 $a D., Nirmal. $3 3780832
700 1 $a J., Ajayan. $3 3780833
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer Nature eBook
830 0 $a Springer tracts in electrical and electronics engineering. $3 3598559
856 4 0 $u https://doi.org/10.1007/978-981-97-7506-4
950 $a Engineering (SpringerNature-11647)