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Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers./
作者:	Yin, Xue.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
面頁冊數:	184 p.
附註:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
標題:	Load. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31078815
ISBN:	9798382615806

Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.
Yin, Xue.

Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 184 p.

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

Thesis (Ph.D.)--McGill University (Canada), 2023.

Aluminum gallium nitride (AlGaN) ultraviolet (UV) laser diodes (LDs) are of great research interest due to their wide range of applications and promising future to replace today's dominant UV lasing technologies, such as gas lasers and solid-state lasers. Nonetheless, the majority of the studies on AlGaN deep UV lasers are still on optical pumping and the development of electrically driven counterparts is relatively slow, mainly rooted in the difficulties in achieving high quality AlGaN epilayers and insufficient p-type conduction. In addition, the AlGaN UV laser research predominantly relies on the structures grown by metalorganic chemical vapor deposition (MOCVD) and the research of AlGaN UV lasers by molecular beam epitaxy (MBE) is rare. It is also noted that the recent progress on electrically injected AlGaN deep UV lasers relies on expensive AlN substrates.The research in this dissertation follows the track of MBE-grown AlGaN on cost-effective foreign substrates, such as silicon (Si) and sapphire, to address the current impediments. This research first demonstrates a novel buffer layer technology, which enables low-cost, highly reproducible, high quality, and nearly strain-free AlN thin film through exploiting the low Al adatom migration during the coalescence process on a GaN nanowire template on Si. This research further demonstrates high quality AlGaN epilayers on such nanowire-assisted AlN templates by MBE. Peak internal quantum efficiency (IQE) of ~50% is derived, which is significantly improved compared to the previously reported bulk AlGaN epilayers on sapphire.In parallel, the research in this dissertation also, for the first time, reports deep UV lasing from MBE-grown AlGaN on sapphire by optical pumping, with clear lasing evidence. Lasing at 298 nm from the AlGaN/AlN double heterostructure (DH) is first obtained, with a lasing threshold of 950 kW/cm2. This research further studies the correlation between point defects and lasing threshold, reducing the lasing threshold to 530 kW/cm2at 287 nm, together with an increase in IQE of ~16%. Towards the electrically injected AlGaN UV LDs, the research in this dissertation designs and numerically investigates a unique Al-content engineered superlattice electron blocking layer (AESL-EBL), which not only improves charge carrier transport with the assistance of hot hole effects but also minimizes optical loss due to doping.

ISBN: 9798382615806Subjects--Topical Terms:

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Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.
LDR:06509nmm a2200397 4500 001 2402192
005 20241028051451.5
006 m o d
007 cr#unu||||||||
008 251215s2023 ||||||||||||||||| ||eng d
020 $a 9798382615806
035 $a (MiAaPQ)AAI31078815
035 $a (MiAaPQ)McGill_bz60d322m
035 $a AAI31078815
035 $a 2402192
040 $a MiAaPQ $c MiAaPQ
100 1 $a Yin, Xue. $3 3772415
245 1 0 $a Molecular Beam Epitaxy of AlGaN Epilayers on Foreign Substrates for Semiconductor Deep Ultraviolet Lasers.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2023
300 $a 184 p.
500 $a Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
500 $a Advisor: Zhao, Songrui.
502 $a Thesis (Ph.D.)--McGill University (Canada), 2023.
520 $a Aluminum gallium nitride (AlGaN) ultraviolet (UV) laser diodes (LDs) are of great research interest due to their wide range of applications and promising future to replace today's dominant UV lasing technologies, such as gas lasers and solid-state lasers. Nonetheless, the majority of the studies on AlGaN deep UV lasers are still on optical pumping and the development of electrically driven counterparts is relatively slow, mainly rooted in the difficulties in achieving high quality AlGaN epilayers and insufficient p-type conduction. In addition, the AlGaN UV laser research predominantly relies on the structures grown by metalorganic chemical vapor deposition (MOCVD) and the research of AlGaN UV lasers by molecular beam epitaxy (MBE) is rare. It is also noted that the recent progress on electrically injected AlGaN deep UV lasers relies on expensive AlN substrates.The research in this dissertation follows the track of MBE-grown AlGaN on cost-effective foreign substrates, such as silicon (Si) and sapphire, to address the current impediments. This research first demonstrates a novel buffer layer technology, which enables low-cost, highly reproducible, high quality, and nearly strain-free AlN thin film through exploiting the low Al adatom migration during the coalescence process on a GaN nanowire template on Si. This research further demonstrates high quality AlGaN epilayers on such nanowire-assisted AlN templates by MBE. Peak internal quantum efficiency (IQE) of ~50% is derived, which is significantly improved compared to the previously reported bulk AlGaN epilayers on sapphire.In parallel, the research in this dissertation also, for the first time, reports deep UV lasing from MBE-grown AlGaN on sapphire by optical pumping, with clear lasing evidence. Lasing at 298 nm from the AlGaN/AlN double heterostructure (DH) is first obtained, with a lasing threshold of 950 kW/cm2. This research further studies the correlation between point defects and lasing threshold, reducing the lasing threshold to 530 kW/cm2at 287 nm, together with an increase in IQE of ~16%. Towards the electrically injected AlGaN UV LDs, the research in this dissertation designs and numerically investigates a unique Al-content engineered superlattice electron blocking layer (AESL-EBL), which not only improves charge carrier transport with the assistance of hot hole effects but also minimizes optical loss due to doping.
520 $a Les diodes laser ultraviolets (UV) a base de nitrure d'aluminium-gallium (AlGaN) suscitent un grand interet en recherche en raison de leur large eventail d'applications et de leur avenir prometteur pour remplacer les technologies de laser UV dominantes actuelles, telles que les lasers a gaz et les lasers a solide. Neanmoins, la majorite des etudes sur les lasers UV profonds en AlGaN portent encore sur le pompage optique et le developpement de leurs homologues electriquement pilotes est relativement lent, principalement en raison des difficultes a obtenir des epitaxies AlGaN de haute qualite et de la conduction de type p insuffisante. En outre, la recherche sur les lasers UV en AlGaN repose principalement sur des structures developpees par epitaxie en phase vapeur aux organometalliques (EPVOM) et les travaux sur les lasers UV en AlGaN par epitaxie par jets moleculaires (MBE) sont rares. Il convient egalement de souligner que les avancees recentes des lasers UV profonds a injection electrique en AlGaN sont tous realises sur des substrats en AlN couteux.La recherche dans cette dissertation suit la voie de l'AlGaN developpe par MBE sur des substrats etrangers economiques, tels que silicium (Si) et saphir, pour surmonter les obstacles actuels. Cette recherche demontre d'abord une nouvelle technologie de couche tampon, qui permet d'obtenir un film mince AlN peu couteux, hautement reproductible, de haute qualite et presque exempt de contraintes en exploitant la faible migration des adatomes d'Al lors du processus de coalescence sur un modele de nanofil de GaN sur Si. Cette recherche montre egalement des epitaxies AlGaN de haute qualite sur de tels modeles d'AlN assistes par nanofils grace a l'utilisation de MBE. Une efficacite quantique interne (IQE) maximal d'environ 50% est obtenu, ce qui represente une amelioration significative par rapport aux couches epitaxiales massives d'AlGaN sur saphir precedemment rapportees.En parallele, la recherche dans cette dissertation rapporte egalement, pour la premiere fois, une emission laser UV profonde provenant d'AlGaN developpe par MBE sur saphir par pompage optique, avec des preuves claires d'emission laser. Une emission laser a 298 nm a partir de la double heterostructure (DH) AlGaN/AlN est d'abord obtenue, avec un seuil de d'emission laser de 950 kW/cm². Cette recherche etudie egalement la correlation entre les defauts ponctuels et le seuil d'emission laser, reduisant le seuil a 530 kW/cm² a 287 nm, accompagne d'une augmentation de l'IQE d'environ 16%. En vue de diodes laser UV en AlGaN a injection electrique, la recherche de cette dissertation concoivent et etudient numeriquement une unique couche de blocage d'electrons a super reseau avec composition d'Al ajustee (AESL-EBL), qui ameliore non seulement le transport des porteurs de charge avec l'aide des effets de trous chauds, mais minimise egalement les pertes optiques dues au dopage.
590 $a School code: 0781.
650 4 $a Load. $3 3562902
650 4 $a Crystal structure. $3 3561040
650 4 $a Microelectromechanical systems. $3 567138
650 4 $a Nanowires. $3 576100
650 4 $a Semiconductors. $3 516162
650 4 $a Zinc. $3 2206375
650 4 $a Lasers. $3 535503
650 4 $a Plasma etching. $3 712111
650 4 $a Light emitting diodes. $3 578763
650 4 $a Aluminum. $3 735071
650 4 $a Molecular beam epitaxy. $3 601057
650 4 $a Energy. $3 876794
650 4 $a Geometry. $3 517251
650 4 $a Scanning electron microscopy. $3 551366
650 4 $a Interfaces. $2 gtt $3 834756
650 4 $a Nitrogen. $3 1314426
650 4 $a Analytical chemistry. $3 3168300
650 4 $a Electrical engineering. $3 649834
650 4 $a Mechanical engineering. $3 649730
650 4 $a Nanotechnology. $3 526235
650 4 $a Optics. $3 517925
690 $a 0791
690 $a 0486
690 $a 0544
690 $a 0548
690 $a 0652
690 $a 0752
710 2 $a McGill University (Canada). $3 1018122
773 0 $t Dissertations Abstracts International $g 85-11B.
790 $a 0781
791 $a Ph.D.
792 $a 2023
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31078815